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Synthesis of high quality 2D carbide MXene flakes using a highly purified MAX precursor for ink applications.
Seok, Shi-Hyun; Choo, Seungjun; Kwak, Jinsung; Ju, Hyejin; Han, Ju-Hyoung; Kang, Woo-Seok; Lee, Joonsik; Kim, Se-Yang; Lee, Do Hee; Lee, Jungsoo; Wang, Jaewon; Song, Seunguk; Jo, Wook; Jung, Byung Mun; Chae, Han Gi; Son, Jae Sung; Kwon, Soon-Yong.
Afiliación
  • Seok SH; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Choo S; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Kwak J; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Ju H; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Han JH; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Kang WS; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Lee J; Composites Research Division, Korea Institute of Materials Science (KIMS) Changwon 51508 Korea.
  • Kim SY; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Lee DH; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Lee J; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Wang J; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Song S; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Jo W; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Jung BM; Composites Research Division, Korea Institute of Materials Science (KIMS) Changwon 51508 Korea.
  • Chae HG; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Son JS; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
  • Kwon SY; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
Nanoscale Adv ; 3(2): 517-527, 2021 Jan 26.
Article en En | MEDLINE | ID: mdl-36131735
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nanoscale Adv Año: 2021 Tipo del documento: Article
Texto completo
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nanoscale Adv Año: 2021 Tipo del documento: Article