Tunable Resistive Switching in 2D MXene Ti<sub>3</sub>C<sub>2</sub> Nanosheets for Non-Volatile Memory and Neuromorphic Computing.

Zhang, Xuelian; Chen, Haohan; Cheng, Siqi; Guo, Feng; Jie, Wenjing; Hao, Jianhua

Tunable Resistive Switching in 2D MXene Ti₃C₂ Nanosheets for Non-Volatile Memory and Neuromorphic Computing.

Zhang, Xuelian; Chen, Haohan; Cheng, Siqi; Guo, Feng; Jie, Wenjing; Hao, Jianhua.

Afiliación

Zhang X; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China.
Chen H; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China.
Cheng S; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China.
Guo F; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, China.
Jie W; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China.
Hao J; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, China.

ACS Appl Mater Interfaces ; 14(39): 44614-44621, 2022 Oct 05.

Article en En | MEDLINE | ID: mdl-36136123

Palabras clave

2D nanosheets; MXene; artificial synapse; memristor; neuromorphic computing

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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article

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