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Dual-channel P-type ternary DNTT-graphene barristor.
Lee, Yongsu; Kim, Seung-Mo; Kim, Kiyung; Kim, So-Young; Lee, Ho-In; Kwon, Heejin; Lee, Hae-Won; Kim, Chaeeun; Some, Surajit; Hwang, Hyeon Jun; Lee, Byoung Hun.
Afiliación
  • Lee Y; Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea.
  • Kim SM; Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea.
  • Kim K; Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea.
  • Kim SY; Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea.
  • Lee HI; Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea.
  • Kwon H; Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea.
  • Lee HW; Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea.
  • Kim C; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Cheomdan-Gwagiro 123, Buk-gu, Gwangju, 61005, Republic of Korea.
  • Some S; Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea.
  • Hwang HJ; Department of Specialty Chemicals Technology, Institute of Chemical Technology, Matunga, Mumbai, 400019, India.
  • Lee BH; Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea. hhjune@postech.ac.kr.
Sci Rep ; 12(1): 19423, 2022 Nov 12.
Article en En | MEDLINE | ID: mdl-36371420
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Texto completo: 1 Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Sci Rep Año: 2022 Tipo del documento: Article
Texto completo
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XML
PubMed Links
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Texto completo: 1 Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Sci Rep Año: 2022 Tipo del documento: Article