Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide.

Lebedev, Alexander A; Kozlovski, Vitali V; Davydovskaya, Klavdia S; Kuzmin, Roman A; Levinshtein, Mikhail E; Strel'chuk, Anatolii M

Lebedev, Alexander A; Kozlovski, Vitali V; Davydovskaya, Klavdia S; Kuzmin, Roman A; Levinshtein, Mikhail E; Strel'chuk, Anatolii M.

Afiliación

Lebedev AA; Ioffe Institute, Politekhnicheskaya Street 26, St. Petersburg 194021, Russia.
Kozlovski VV; Department of Experimental Physics, St. Petersburg State Polytechnic University, Polytekhnicheskaya 29, St. Petersburg 195251, Russia.
Davydovskaya KS; Ioffe Institute, Politekhnicheskaya Street 26, St. Petersburg 194021, Russia.
Kuzmin RA; Ioffe Institute, Politekhnicheskaya Street 26, St. Petersburg 194021, Russia.
Levinshtein ME; Ioffe Institute, Politekhnicheskaya Street 26, St. Petersburg 194021, Russia.
Strel'chuk AM; Ioffe Institute, Politekhnicheskaya Street 26, St. Petersburg 194021, Russia.

Materials (Basel) ; 15(23)2022 Dec 03.

Article en En | MEDLINE | ID: mdl-36500133

Palabras clave

capacitance-voltage characteristics; current-voltage characteristics; deep levels; electrons; protons; radiation compensation; wide-gap semiconductors

Texto completo

Imprimir

XML

PubMed Links

Buscar en Google