Reversible magnetism transition at ferroelectric oxide heterointerface.

Chen, Jialu; Zhang, Zijun; Luo, Liang; Lu, Yunhao; Song, Cheng; Cheng, Di; Chen, Xing; Li, Wei; Ren, Zhaohui; Wang, Jigang; Tian, He; Zhang, Ze; Han, Gaorong

Chen, Jialu; Zhang, Zijun; Luo, Liang; Lu, Yunhao; Song, Cheng; Cheng, Di; Chen, Xing; Li, Wei; Ren, Zhaohui; Wang, Jigang; Tian, He; Zhang, Ze; Han, Gaorong.

Afiliación

Chen J; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China.
Zhang Z; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou 31002
Luo L; Department of Physics and Astronomy, Iowa State University and Ames Laboratory-USDOE, Ames, IA 50011, USA.
Lu Y; Department of Physics, Zhejiang University, Hangzhou 310027, China.
Song C; Key Laboratory of Advanced Materials (Ministry of Education), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Cheng D; Department of Physics and Astronomy, Iowa State University and Ames Laboratory-USDOE, Ames, IA 50011, USA.
Chen X; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou 31002
Li W; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China.
Ren Z; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China. Electronic address: renzh@zju.edu.cn.
Wang J; Department of Physics and Astronomy, Iowa State University and Ames Laboratory-USDOE, Ames, IA 50011, USA. Electronic address: jgwang@iastate.edu.
Tian H; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou 31002
Zhang Z; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou 31002
Han G; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China. Electronic address: hgr@zju.edu.cn.

Sci Bull (Beijing) ; 65(24): 2094-2099, 2020 Dec 30.

Article en En | MEDLINE | ID: mdl-36732962

RESUMEN

Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. In this work, we report for the first time that a ferroelectric polarization screening at SrTiO3/PbTiO3 interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti 3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications.

Palabras clave

Ferroelectric polarization; Interface; Magnetic transition; SrTiO(3)/PbTiO(3)

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