Controllable digital and analog resistive switching behavior of 2D layered WSe<sub>2</sub> nanosheets for neuromorphic computing.

Controllable digital and analog resistive switching behavior of 2D layered WSe₂ nanosheets for neuromorphic computing.

Cheng, Siqi; Zhong, Lun; Yin, Jinxiang; Duan, Huan; Xie, Qin; Luo, Wenbo; Jie, Wenjing.

Afiliación

Cheng S; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China. wenjing.jie@sicnu.edu.cn.
Zhong L; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China. wenjing.jie@sicnu.edu.cn.
Yin J; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China. wenjing.jie@sicnu.edu.cn.
Duan H; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China. wenjing.jie@sicnu.edu.cn.
Xie Q; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Luo W; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Jie W; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China. wenjing.jie@sicnu.edu.cn.

Nanoscale ; 15(10): 4801-4808, 2023 Mar 09.

Article en En | MEDLINE | ID: mdl-36779310

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article