Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions.

Schimmel, Saskia; Tomida, Daisuke; Ishiguro, Tohru; Honda, Yoshio; Chichibu, Shigefusa F; Amano, Hiroshi

Schimmel, Saskia; Tomida, Daisuke; Ishiguro, Tohru; Honda, Yoshio; Chichibu, Shigefusa F; Amano, Hiroshi.

Afiliación

Schimmel S; Crystal Growth Lab, Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany.
Tomida D; Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan.
Ishiguro T; Electron Devices (LEB), Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany.
Honda Y; Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan.
Chichibu SF; Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan.
Amano H; Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan.

Materials (Basel) ; 16(5)2023 Feb 28.

Article en En | MEDLINE | ID: mdl-36903128

Palabras clave

ammonothermal; buoyancy; computational fluid dynamics; conjugated heat transfer; crystal growth; gallium nitride; hydrothermal; natural convection; numerical simulation; solvothermal

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