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Post-annealing optimization of the heteroepitaxial La-doped SrSnO3 integrated on silicon via ALD.
Zhang, Yu; Hu, Shen; Chen, Pei-Yu; Zhu, Jiyuan; Chen, Bojia; Bai, Rongxu; Zhu, Hao; Chen, Lin; Zhang, David W; Lee, Jack C; Sun, Qingqing; Ekerdt, John G; Ji, Li.
Afiliación
  • Zhang Y; School of Microelectronics, Fudan University, Shanghai 200433, China. hushen@fudan.edu.cn.
  • Hu S; School of Microelectronics, Fudan University, Shanghai 200433, China. hushen@fudan.edu.cn.
  • Chen PY; Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA. ekerdt@utexas.edu.
  • Zhu J; School of Microelectronics, Fudan University, Shanghai 200433, China. hushen@fudan.edu.cn.
  • Chen B; School of Microelectronics, Fudan University, Shanghai 200433, China. hushen@fudan.edu.cn.
  • Bai R; School of Microelectronics, Fudan University, Shanghai 200433, China. hushen@fudan.edu.cn.
  • Zhu H; School of Microelectronics, Fudan University, Shanghai 200433, China. hushen@fudan.edu.cn.
  • Chen L; School of Microelectronics, Fudan University, Shanghai 200433, China. hushen@fudan.edu.cn.
  • Zhang DW; School of Microelectronics, Fudan University, Shanghai 200433, China. hushen@fudan.edu.cn.
  • Lee JC; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA.
  • Sun Q; School of Microelectronics, Fudan University, Shanghai 200433, China. hushen@fudan.edu.cn.
  • Ekerdt JG; Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA. ekerdt@utexas.edu.
  • Ji L; School of Microelectronics, Fudan University, Shanghai 200433, China. hushen@fudan.edu.cn.
Nanoscale ; 15(21): 9432-9439, 2023 Jun 01.
Article en En | MEDLINE | ID: mdl-37158269
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article
Texto completo
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article