Large-scale and stacked transfer of bilayers MoS<sub>2</sub>devices on a flexible polyimide substrate.

Guo, Xiaojiao; Wang, Die; Zhang, Dejian; Ma, Jingyi; Wang, Xinyu; Chen, Xinyu; Tong, Ling; Zhang, Xinzhi; Zhu, Junqiang; Yang, Peng; Gou, Saifei; Yue, Xiaofei; Sheng, Chuming; Xu, Zihan; An, Zhenghua; Qiu, Zhijun; Cong, Chunxiao; Zhou, Peng; Fang, Zhiqiang; Bao, Wenzhong

Large-scale and stacked transfer of bilayers MoS₂devices on a flexible polyimide substrate.

Guo, Xiaojiao; Wang, Die; Zhang, Dejian; Ma, Jingyi; Wang, Xinyu; Chen, Xinyu; Tong, Ling; Zhang, Xinzhi; Zhu, Junqiang; Yang, Peng; Gou, Saifei; Yue, Xiaofei; Sheng, Chuming; Xu, Zihan; An, Zhenghua; Qiu, Zhijun; Cong, Chunxiao; Zhou, Peng; Fang, Zhiqiang; Bao, Wenzhong.

Afiliación

Guo X; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Wang D; Center for Integrated Quantum Information Technologies (IQIT), School of Physics and Astronomy and State Key Laboratory of Advanced Optical Communication Systems and Network, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
Zhang D; Chip Hub for Integrated Photonics Xplore (CHIPX), Shanghai Jiao Tong University, Wuxi 214000, People's Republic of China.
Ma J; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Wang X; State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, People's Republic of China.
Chen X; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Tong L; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Zhang X; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Zhu J; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Yang P; Department of Physics, State Key Laboratory of Surface Physics, Institute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of Micro, Fudan University, Shanghai 200433, People's Republic of China.
Gou S; State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China.
Yue X; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, People's Republic of China.
Sheng C; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Xu Z; State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China.
An Z; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Qiu Z; Shenzhen Six Carbon Technology, Shenzhen 518055, People's Republic of China.
Cong C; Department of Physics, State Key Laboratory of Surface Physics, Institute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of Micro, Fudan University, Shanghai 200433, People's Republic of China.
Zhou P; State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China.
Fang Z; State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China.
Bao W; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.