Direct growth of graphene on hyper-doped silicon to enhance carrier transport for infrared photodetection.

Yu, Zhiguo; Cong, Jingkun; Khan, Afzal; Hang, Pengjie; Yang, Deren; Yu, Xuegong.

Afiliación

Yu Z; State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.
Cong J; Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, People's Republic of China.
Khan A; State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.
Hang P; State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.
Yang D; State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.
Yu X; State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.

Nanotechnology ; 35(11)2023 Dec 27.

Article en En | MEDLINE | ID: mdl-38081080