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Solution-processable mixed-anion cluster chalcohalide Rb6Re6S8I8 in a light-emitting diode.
Laing, Craig C; Kim, Daehan; Park, Jinu; Shen, Jiahong; Hadar, Ido; Hoffman, Justin M; He, Jiangang; Shin, Byungha; Wolverton, Chris; Kanatzidis, Mercouri G.
Afiliación
  • Laing CC; Department of Chemistry, Northwestern University, Evanston, IL, USA.
  • Kim D; Department of Chemistry, Northwestern University, Evanston, IL, USA.
  • Park J; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea.
  • Shen J; Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
  • Hadar I; Department of Chemistry, Northwestern University, Evanston, IL, USA.
  • Hoffman JM; Department of Chemistry, Northwestern University, Evanston, IL, USA.
  • He J; X-Ray Science Division, Argonne National Laboratory, Lemont, IL, USA.
  • Shin B; Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
  • Wolverton C; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea.
  • Kanatzidis MG; Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
Nat Mater ; 23(2): 230-236, 2024 Feb.
Article en En | MEDLINE | ID: mdl-38172544
ABSTRACT
Rhenium chalcohalide cluster compounds are a photoluminescent family of mixed-anion chalcohalide cluster materials. Here we report the new material Rb6Re6S8I8, which crystallizes in the cubic space group Fm[Formula see text]m and contains isolated [Re6S8I6]4- clusters. Rb6Re6S8I8 has a band gap of 2.06(5) eV and an ionization energy of 5.51(3) eV, and exhibits broad photoluminescence (PL) ranging from 1.01 eV to 2.12 eV. The room-temperature PL exhibits a PL quantum yield of 42.7% and a PL lifetime of 77 µs (99 µs at 77 K). Rb6Re6S8I8 is found to be soluble in multiple polar solvents including N,N-dimethylformamide, which enables solution processing of the material into films with thickness under 150 nm. Light-emitting diodes based on films of Rb6Re6S8I8 were fabricated, demonstrating the potential for this family of materials in optoelectronic devices.

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nat Mater Asunto de la revista: CIENCIA / QUIMICA Año: 2024 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nat Mater Asunto de la revista: CIENCIA / QUIMICA Año: 2024 Tipo del documento: Article