Reduction-Induced Magnetic Behavior in LaFeO<sub>3-Î´</sub> Thin Films.

Arndt, Nathan D; Hershkovitz, Eitan; Shah, Labdhi; Kjærnes, Kristoffer; Yang, Chao-Yao; Balakrishnan, Purnima P; Shariff, Mohammed S; Tauro, Shaun; Gopman, Daniel B; Kirby, Brian J; Grutter, Alexander J; Tybell, Thomas; Kim, Honggyu; Need, Ryan F

Reduction-Induced Magnetic Behavior in LaFeO_3-Î´ Thin Films.

Arndt, Nathan D; Hershkovitz, Eitan; Shah, Labdhi; Kjærnes, Kristoffer; Yang, Chao-Yao; Balakrishnan, Purnima P; Shariff, Mohammed S; Tauro, Shaun; Gopman, Daniel B; Kirby, Brian J; Grutter, Alexander J; Tybell, Thomas; Kim, Honggyu; Need, Ryan F.

Afiliación

Arndt ND; Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
Hershkovitz E; Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
Shah L; Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
Kjærnes K; Department of Electronic Systems, NTNU-Norwegian University of Science and Technology, 7491 Trondheim, Norway.
Yang CY; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Balakrishnan PP; NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA.
Shariff MS; Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
Tauro S; Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
Gopman DB; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA.
Kirby BJ; NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA.
Grutter AJ; NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MA 20899, USA.
Tybell T; Department of Electronic Systems, NTNU-Norwegian University of Science and Technology, 7491 Trondheim, Norway.
Kim H; Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
Need RF; Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.

Materials (Basel) ; 17(5)2024 Mar 04.

Article en En | MEDLINE | ID: mdl-38473659

ABSTRACT

ABSTRACT

The effect of oxygen reduction on the magnetic properties of LaFeO3-Î´ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior were observed in nominally identical LFO films grown on substrates prepared using different common methods. In an LFO film grown on as-received SrTiO3 (STO) substrate, the original perovskite film structure was preserved following reduction, and remnant magnetization was only seen at low temperatures. In a LFO film grown on annealed STO, the LFO lost significantly more oxygen and the microstructure decomposed into La- and Fe-rich regions with remnant magnetization that persisted up to room temperature. These results demonstrate an ability to access multiple, distinct magnetic states via oxygen reduction in the same starting material and suggest LFO may be a suitable materials platform for nonvolatile multistate memory.

Palabras clave

ferrites; magnetic thin films; magnetoionics

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