Delay characteristics of quasi-nonvolatile memory devices operating in positive feedback mechanism.

Oh, Jeongyun; Jeon, Juhee; Shin, Yunwoo; Cho, Kyoungah; Kim, Sangsig.

Afiliación

Oh J; Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Jeon J; Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Shin Y; Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Cho K; Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Kim S; Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Nanotechnology ; 35(41)2024 Jul 25.

Article en En | MEDLINE | ID: mdl-39019046