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Pressure-Induced Re-Entrant Superconductivity in Transition Metal Dichalcogenide TiSe2.
Xia, Wei; Wu, Jiaxuan; Xia, Chengliang; Li, Zhongyang; Yuan, Jian; An, Chao; Liu, Xiangqi; Wang, Xia; Yu, Na; Zou, Zhiqiang; Liu, Gang; Feng, Jiajia; Zhang, Lili; Dong, Zhaohui; Chen, Bin; Yang, Zhaorong; Yu, Zhenhai; Chen, Hanghui; Guo, Yanfeng.
Afiliación
  • Xia W; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Wu J; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China.
  • Xia C; NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai, 200122, China.
  • Li Z; NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai, 200122, China.
  • Yuan J; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • An C; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Liu X; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Wang X; Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China.
  • Yu N; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Zou Z; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Liu G; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Feng J; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Zhang L; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Dong Z; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Chen B; Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China.
  • Yang Z; Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China.
  • Yu Z; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Chen H; Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, China.
  • Guo Y; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
Small ; 20(45): e2402749, 2024 Nov.
Article en En | MEDLINE | ID: mdl-39031112
ABSTRACT
Transition metal dichalcogenide TiSe2 exhibits a superconducting dome within a low pressure range of 2-4 GPa, which peaks with the maximal transition temperature Tc of ≈1.8 K. Here it is reported that applying high pressure induces a new superconducting state in TiSe2, which starts at ≈16 GPa with a substantially higher Tc that reaches 5.6 K at ≈21.5 GPa with no sign of decline. Combining high-throughput first-principles structure search, X-ray diffraction, and Raman spectroscopy measurements up to 30 GPa, It is found that TiSe2 undergoes a first-order structural transition from the 1T phase under ambient pressure to a new 4O phase under high pressure. Comparative ab initio calculations reveal that while the conventional phonon-mediated pairing mechanism may account for the superconductivity observed in 1T-TiSe2 under low pressure, the electron-phonon coupling of 4O-TiSe2 is too weak to induce a superconducting state whose transition temperature is as high as 5.6 K under high pressure. The new superconducting state found in pressurized TiSe2 requires further study on its underlying mechanism.
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article