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Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves.
Li, Yiliu; Arsenault, Eric A; Yang, Birui; Wang, Xi; Park, Heonjoon; Guo, Yinjie; Taniguchi, Takashi; Watanabe, Kenji; Gamelin, Daniel; Hone, James C; Dean, Cory R; Maehrlein, Sebastian F; Xu, Xiaodong; Zhu, Xiaoyang.
Afiliación
  • Li Y; Department of Chemistry, Columbia University, New York, New York 10027, United States.
  • Arsenault EA; Department of Chemistry, Columbia University, New York, New York 10027, United States.
  • Yang B; Department of Physics, Columbia University, New York, New York 10027, United States.
  • Wang X; Department of Physics, Washington University, St. Louis, Missouri 63130, United States.
  • Park H; Institute of Materials Science & Engineering, Washington University, St. Louis, Missouri 63130, United States.
  • Guo Y; Department of Physics, University of Washington, Seattle, Washington 98195, United States.
  • Taniguchi T; Department of Physics, Columbia University, New York, New York 10027, United States.
  • Watanabe K; Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Gamelin D; Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Hone JC; Department of Chemistry, University of Washington, Seattle, Washington 98195, United States.
  • Dean CR; Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States.
  • Maehrlein SF; Department of Physics, Columbia University, New York, New York 10027, United States.
  • Xu X; Department of Physical Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin 14195, Germany.
  • Zhu X; Department of Physics, University of Washington, Seattle, Washington 98195, United States.
Nano Lett ; 24(39): 12156-12162, 2024 Oct 02.
Article en En | MEDLINE | ID: mdl-39303288
ABSTRACT
van der Waals (vdW) structures host a broad range of physical phenomena. New opportunities arise if different functional layers are remotely modulated or coupled in a device structure. Here we demonstrate the in situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) moirés with on-chip terahertz (THz) waves. Using common dual-gated device structures of a TMD moiré bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ∼0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moiré excitons or Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control, can serve as on-chip opto-elastic transducers to generate THz waves for coherent control and vibrational entanglement of functional layers in moiré devices.
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article