RESUMEN
With the advent of artificial intelligence (AI), memristors have received significant interest as a synaptic building block for neuromorphic systems, where each synaptic memristor should operate in an analog fashion, exhibiting multilevel accessible conductance states. Here, we demonstrate that the transition of the operation mode in poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based flexible memristor from conventional binary to synaptic analog switching can be achieved simply by reducing the size of the formed filament. With the quantized conductance states observed in the flexible pV3D3 memristor, analog potentiation and depression characteristics of the memristive synapse are obtained through the growth of atomically thin Cu filament and lateral dissolution of the filament via dominant electric field effect, respectively. The face classification capability of our memristor is evaluated via simulation using an artificial neural network consisting of pV3D3 memristor synapses. These results will encourage the development of soft neuromorphic intelligent systems.
Asunto(s)
Cobre/química , Nanoestructuras/química , Nanotecnología/instrumentación , Redes Neurales de la Computación , Siloxanos/química , Inteligencia Artificial , Conductividad Eléctrica , Diseño de Equipo , Cara/anatomía & histología , Humanos , Nanotecnología/métodosRESUMEN
There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.
Asunto(s)
Equipos de Almacenamiento de Computador , Grafito/química , Membranas Artificiales , Óxidos/química , Procesamiento de Señales Asistido por Computador/instrumentación , Módulo de Elasticidad , Diseño de Equipo , Análisis de Falla de EquipoRESUMEN
Here we report the synthesis of a novel electrochemically active polymer, preparation of adlayers of the polymer on optically transparent electrodes, and an application of the adlayers to immobilization of engineered cells through a direct covalent coupling reaction.