Supramolecular recognition control of polyethylene glycol modified N-doped graphene quantum dots: tunable selectivity for alkali and alkaline-earth metal ions.

The graphene quantum dot based fluorescent probe community needs unambiguous evidence about the control on the ion selectivity. In this paper, polyethylene glycol modified N-doped graphene quantum dots (PN-GQDs) were synthesized by alkylation reaction between graphene quantum dots and organic halides. We demonstrate the tunable selectivity and sensitivity by controlling the supramolecular recognition through the length and the end group size of the polyether chain on PN-GQDs. The relationship formulae between the selectivity/detection limit and polyether chains are experimentally deduced. The polyether chain length determines the interaction between the PN-GQDs and ions with different ratios of charge to radius, which in turn leads to a good selectivity control. Meanwhile the detection limit shows an exponential growth with the size of end groups of the polyether chain. The PN-GQDs can be used as ultrasensitive and selective fluorescent probes for Li(+), Na(+), K(+), Mg(2+), Ca(2+) and Sr(2+), respectively.

"Self-Matched" Tribo/Piezoelectric Nanogenerators Using Vapor-Induced Phase-Separated Poly(vinylidene fluoride) and Recombinant Spider Silk.

Flexible biocompatible mechanical energy harvesters are drawing increasing interest because of their high energy-harvesting efficiency for powering wearable/implantable devices. Here, a type of "self-matched" tribo-piezoelectric nanogenerators composed of genetically engineered recombinant spider silk protein and piezoelectric poly(vinylidene fluoride) (PVDF)-decorated poly(ethylene terephthalate) (PET) layers is reported. The PET layer serves as a shared structure and electrification layer for both piezoelectric and triboelectric nanogenerators. Importantly, the PVDF generates a strong piezo-potential that modifies the surface potential of the PET layer to match the electron-transfer direction of the spider silk during triboelectrification. A "vapor-induced phase-separation" process is developed to enhance the piezoelectric performance in a facile and "green" roll-to-roll manufacturing fashion. The devices show exceptional output performance and energy transformation efficiency among currently existing energy harvesters of similar sizes and exhibit the potential for large-scale fabrication and various implantable/wearable applications.

A New Graphene Derivative: Hydroxylated Graphene with Excellent Biocompatibility.

Graphene derivatives (such as graphene oxide and hydrogenated graphene) have been widely investigated because of their excellent properties. Here, we report large-scale (kilogram scale) synthesis of a new unique graphene derivative: hydroxylated graphene (G-OH). The exclusive existence form of oxygen-containing groups in G-OH is hydroxyl, which was verified by spectral characterization and quantitative halogenating reaction. It is very interesting that both the wettability and electrical conductivity show reversible change in halogenating and hydrolysis reaction cycles, which demonstrates the versatility of G-OH. Most importantly, the hydrophilicity and weak inductive nature of G-OH provides a well microenvironment for the cells adhesion and proliferation. On G-OH paper, rat adipose tissue-derived stromal cells exhibited a typical fibroblast-like shape with high rate of increase and survival after 3 day of incubation. This G-OH paper with good mechanical property is expected to be a new biomaterial for bone, vessel and skin regeneration.

Direct growth of graphene film on germanium substrate.

Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene itself. By ambient-pressure chemical vapor deposition, we demonstrate large-scale and uniform depositon of high-quality graphene directly on a Ge substrate which is wafer scale and has been considered to replace conventional Si for the next generation of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The immiscible Ge-C system under equilibrium conditions dictates graphene depositon on Ge via a self-limiting and surface-mediated process rather than a precipitation process as observed from other metals with high carbon solubility. Our technique is compatible with modern microelectronics technology thus allowing integration with high-volume production of complementary metal-oxide-semiconductors (CMOS).