Enhancement of the electrical properties of graphene grown by chemical vapor deposition via controlling the effects of polymer residue.

Residual polymer (here, poly(methyl methacrylate), PMMA) left on graphene from transfer from metals or device fabrication processes affects its electrical and thermal properties. We have found that the amount of polymer residue left after the transfer of chemical vapor deposited (CVD) graphene varies depending on the initial concentration of the polymer solution, and this residue influences the electrical performance of graphene field-effect transistors fabricated on SiO2/Si. A PMMA solution with lower concentration gave less residue after exposure to acetone, resulting in less p-type doping in graphene and higher charge carrier mobility. The electrical properties of the weakly p-doped graphene could be further enhanced by exposure to formamide with the Dirac point at nearly zero gate voltage and a more than 50% increase of the room-temperature charge carrier mobility in air. This can be attributed to electron donation to graphene by the -NH2 functional group in formamide that is absorbed in the polymer residue. This work provides a route to enhancing the electrical properties of CVD-grown graphene even when it has a thin polymer coating.

Thermal transport in three-dimensional foam architectures of few-layer graphene and ultrathin graphite.

At a very low solid concentration of 0.45 ± 0.09 vol %, the room-temperature thermal conductivity (κ(GF)) of freestanding graphene-based foams (GF), comprised of few-layer graphene (FLG) and ultrathin graphite (UG) synthesized through the use of methane chemical vapor deposition on reticulated nickel foams, was increased from 0.26 to 1.7 W m(-1) K(-1) after the etchant for the sacrificial nickel support was changed from an aggressive hydrochloric acid solution to a slow ammonium persulfate etchant. In addition, κ(GF) showed a quadratic dependence on temperature between 11 and 75 K and peaked at about 150 K, where the solid thermal conductivity (κ(G)) of the FLG and UG constituents reached about 1600 W m(-1) K(-1), revealing the benefit of eliminating internal contact thermal resistance in the continuous GF structure.

Graphene oxide thin films for flexible nonvolatile memory applications.

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

Graphene films with large domain size by a two-step chemical vapor deposition process.

The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by chemical vapor deposition (CVD) of methane on Cu foils. We also showed that graphene growth on Cu is a surface-mediated process and the films were polycrystalline with domains having an area of tens of square micrometers. In this paper, we report on the effect of growth parameters such as temperature, and methane flow rate and partial pressure on the growth rate, domain size, and surface coverage of graphene as determined by Raman spectroscopy, and transmission and scanning electron microscopy. On the basis of the results, we developed a two-step CVD process to synthesize graphene films with domains having an area of hundreds of square micrometers. Scanning electron microscopy and Raman spectroscopy clearly show an increase in domain size by changing the growth parameters. Transmission electron microscopy further shows that the domains are crystallographically rotated with respect to each other with a range of angles from about 13 to nearly 30°. Electrical transport measurements performed on back-gated FETs show that overall films with larger domains tend to have higher carrier mobility up to about 16,000 cm(2) V(-1) s(-1) at room temperature.

Transfer of large-area graphene films for high-performance transparent conductive electrodes.

Graphene, a two-dimensional monolayer of sp(2)-bonded carbon atoms, has been attracting great interest due to its unique transport properties. One of the promising applications of graphene is as a transparent conductive electrode owing to its high optical transmittance and conductivity. In this paper, we report on an improved transfer process of large-area graphene grown on Cu foils by chemical vapor deposition. The transferred graphene films have high electrical conductivity and high optical transmittance that make them suitable for transparent conductive electrode applications. The improved transfer processes will also be of great value for the fabrication of electronic devices such as field effect transistor and bilayer pseudospin field effect transistor devices.

Bond-detach lithography: a method for micro/nanolithography by precision PDMS patterning.

We have discovered a micro/nanopatterning technique based on the patterning of a PDMS membrane/film, which involves bonding a PDMS structure/stamp (that has the desired patterns) to a PDMS film. The technique, which we call "bond-detach lithography", was demonstrated (in conjunction with other microfabrication techniques) by transferring several micro- and nanoscale patterns onto a variety of substrates. Bond-detach lithography is a parallel process technique in which a master mold can be used many times, and is particularly simple and inexpensive.

Fabrication of nanopores in a 100-nm thick Si3N4 membrane.

Textured alumina films have been used to fabricate nanoscale pores in Si3N4 membranes. A few nanometer-thick alumina layer was used as a masking material for nanopore fabrication, and the pattern was transferred into a 100-nm thick, 200 microm x 200 microm Si3N4 membrane by reactive ion etching (RIE). The nanopores were found to be concentrated in a approximately 150-microm diameter region at the center of the membrane.

Nanoporous Ni(OH)2 thin film on 3D Ultrathin-graphite foam for asymmetric supercapacitor.

Nanoporous nickel hydroxide (Ni(OH)2) thin film was grown on the surface of ultrathin-graphite foam (UGF) via a hydrothermal reaction. The resulting free-standing Ni(OH)2/UGF composite was used as the electrode in a supercapacitor without the need for addition of either binder or metal-based current collector. The highly conductive 3D UGF network facilitates electron transport and the porous Ni(OH)2 thin film structure shortens ion diffusion paths and facilitates the rapid migration of electrolyte ions. An asymmetric supercapacitor was also made and studied with Ni(OH)2/UGF as the positive electrode and activated microwave exfoliated graphite oxide ('a-MEGO') as the negative electrode. The highest power density of the fully packaged asymmetric cell (44.0 kW/kg) was much higher (2-27 times higher), while the energy density was comparable to or higher, than high-end commercially available supercapacitors. This asymmetric supercapacitor had a capacitance retention of 63.2% after 10,000 cycles.

A platform for large-scale graphene electronics--CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride.

Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication.

Progress, challenges, and opportunities in two-dimensional materials beyond graphene.

Graphene's success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer-thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in field-effect transistors, spin- and valley-tronics, thermoelectrics, and topological insulators, among many other applications.

Nanostructured hybrid transparent conductive films with antibacterial properties.

Here, we demonstrate that the assembly of nanostructures with different dimensionalities yields "multicomponent hybrid" transparent conductive films (TCFs) with sheet resistance and optical transmittance comparable to that of indium tin oxide (ITO) films. It was shown that sheet resistance of single-component Ag nanowire (NW) films can be further decreased by introducing gold-decorated reduced graphene oxide (RG-O) nanoplatelets that bridge the closely located noncontacting metal NWs. RG-O nanoplatelets can act as a protective and adhesive layer for underneath metal NWs, resulting in better performance of hybrid TCFs compared to single-component TCFs. Additionally, these hybrid TCFs possess antibacterial properties, demonstrating their multifunctional characteristics that might have a potential for biomedical device applications. Further development of this strategy paves a way toward next generation TCFs composed of different nanostructures and characterized by multiple (or additional) functionalities.

Mesoporous silica as a membrane for ultra-thin implantable direct glucose fuel cells.

The design, fabrication and characterization of an inorganic catalyst based direct glucose fuel cell using mesoporous silica coating as a functional membrane is reported. The desired use of mesoporous silica based direct glucose fuel cell is for a blood vessel implantable device. Blood vessel implantable direct glucose fuel cells have access to higher continuous glucose concentrations. However, reduction in the implant thickness is required for application in the venous system as part of a stent. We report development of an implantable device with a platinum thin-film (thickness: 25 nm) deposited on silicon substrate (500 µm) to serve as the anode, and graphene pressed on a stainless steel mesh (175 µm) to serve as the cathode. Control experiments involved the use of a surfactant-coated polypropylene membrane (50 µm) with activated carbon (198 µm) electrodes. We demonstrate that a mesoporous silica thin film (270 nm) is capable of replacing the conventional polymer based membranes with an improvement in the power generated over conventional direct glucose fuel cells.

High-performance supercapacitors based on poly(ionic liquid)-modified graphene electrodes.

We report a high-performance supercapacitor incorporating a poly(ionic liquid)-modified reduced graphene oxide (PIL:RG-O) electrode and an ionic liquid (IL) electrolyte (specifically, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)amide or EMIM-NTf(2)). PIL:RG-O provides enhanced compatibility with the IL electrolyte, thereby increasing the effective electrode surface area accessible to electrolyte ions. The supercapacitor assembled with PIL:RG-O electrode and EMIM-NTf(2) electrolyte showed a stable electrochemical response up to 3.5 V operating voltage and was capable of yielding a maximum energy density of 6.5 W·h/kg with a power density of 2.4 kW/kg. These results demonstrate the potential of the PIL:RG-O material as an electrode in high-performance supercapacitors.

Oxidation resistance of graphene-coated Cu and Cu/Ni alloy.

The ability to protect refined metals from reactive environments is vital to many industrial and academic applications. Current solutions, however, typically introduce several negative effects, including increased thickness and changes in the metal physical properties. In this paper, we demonstrate for the first time the ability of graphene films grown by chemical vapor deposition to protect the surface of the metallic growth substrates of Cu and Cu/Ni alloy from air oxidation. In particular, graphene prevents the formation of any oxide on the protected metal surfaces, thus allowing pure metal surfaces only one atom away from reactive environments. SEM, Raman spectroscopy, and XPS studies show that the metal surface is well protected from oxidation even after heating at 200 °C in air for up to 4 h. Our work further shows that graphene provides effective resistance against hydrogen peroxide. This protection method offers significant advantages and can be used on any metal that catalyzes graphene growth.

Mechanical properties of monolayer graphene oxide.

Mechanical properties of ultrathin membranes consisting of one layer, two overlapped layers, and three overlapped layers of graphene oxide platelets were investigated by atomic force microscopy (AFM) imaging in contact mode. In order to evaluate both the elastic modulus and prestress of thin membranes, the AFM measurement was combined with the finite element method (FEM) in a new approach for evaluating the mechanics of ultrathin membranes. Monolayer graphene oxide was found to have a lower effective Young's modulus (207.6 ± 23.4 GPa when a thickness of 0.7 nm is used) as compared to the value reported for "pristine" graphene. The prestress (39.7-76.8 MPa) of the graphene oxide membranes obtained by solution-based deposition was found to be 1 order of magnitude lower than that obtained by others for mechanically cleaved graphene. The novel AFM imaging and FEM-based mapping methods presented here are of general utility for obtaining the elastic modulus and prestress of thin membranes.

An ultra-thin PDMS membrane as a bio/micro-nano interface: fabrication and characterization.

We report a method for making ultra-thin PDMS membrane devices. Freely suspended membranes as thin as 70 nm have been fabricated. Bulging tests were performed with a custom built fluidic cell to characterize large circular membranes. The fluidic cell allows the media (such as air or water) to wet one side of the membrane while maintaining the other side dry. Pressure was applied to the membrane via a liquid manometer through the fluidic cell. The resulting load-deflection curves show membranes that are extremely flexible, and they can be reproducibly loaded and unloaded. Such devices may potentially be used as mechanical and chemical sensors, and as a bio-nano/micro interface to study cellular mechanics in both static and dynamic environments.