Synthesis and characterization of an anthracene-based low band gap polymer for photovoltaic devices.

We have synthesized an anthracene-based conjugated polymer, poly[(9,10-bis(oct-1-ynyl)anthracene)-alt-(5,6-bis(octyloxy)-4,7-bis(thiophen-2-yl)benzo-[c][1,2,5]-thiadiazole)] (PANTBT), for application in organic photovoltaic devices. It exhibited a number average molecular weight of 14,300 g/mol and was fairly soluble in chlorinated organic solvents due to flexible octynyl- and octyloxy side chains on the anthracene and benzothiadiazole moieties. PANTBT showed absorption covering 300-660 nm. Through the bond alternation between the electron-sufficient anthracene (and thiophene) and electron-deficient benzothiadiazole units, a band gap of PANTBT was decreased to 1.89 eV, showing a deep HOMO level of -5.31 eV. As a result, PANTBT exhibited promising photovoltaic properties with a PCE value of 1.90% (VOC = 0.77 V, JSC = -6.50 mA/cm2, FF = 0.38) upon blending with PC71, BM under AM 1.5G.

Vinyl-type polynorbornenes with pendant PCBM: a novel acceptor for organic solar cells.

Vinyl addition homo- and copolymerization of norbornene monomer (M1) functionalized with a PCBM moiety using a Pd(II) catalyst in combination with a 1-octene chain transfer agent efficiently produces polynorbornenes with side-chain PCBM groups. Characterization by NMR spectroscopy and elemental analysis reveals that the copolymers constitute a well-defined polymer structure with controlled incorporation of M1. Although the homopolymer is insoluble in organic solvents, the copolymers containing 62 mol% (P2) and 50 mol% (P3) of the PCBM moiety are soluble in chlorinated solvents such as o-dichlorobenzene. The bulk-heterojunction organic photovoltaic devices fabricated based on the P3HT:P3 blends show that P3 can adequately function as an electron acceptor, leading to a cell with a power conversion efficiency of 1.5%, which is outstanding among the polymeric rivals.

Simple and practical methods for utilizing parylene C film based on vertical deposition and laser patterning.

We propose two novel methods to effectively utilize parylene C films. First, we demonstrate a vertical deposition method capable of depositing a parylene C film of the same thickness on both sides of a sample. Through this method, we have formed parylene C films with a thickness of 4 µm on both sides of the sample with a thickness deviation of less than 2.5%. Further optical verification indicates that parylene C films formed by this method have a very uniform thickness distribution on each side of the surfaces. Second, we propose a debris-tolerant laser patterning method as a mask-less means to fabricate self-supporting ultrathin parylene C films. This method does not involve any photolithography and entails a simple and rapid process that can be performed using only a few materials with excellent biocompatibility. It is demonstrated that patterned parylene C films exhibit a high degree of surface uniformity and have various geometrical shapes so that they can be used for substrates of highly flexible and/or stretchable devices. Finally, we use both of the proposed methods to fabricate flexible, stretchable, and waterproof-packaged bifacial blue LED modules to illustrate their potential in emerging applications that would benefit from such versatile form factors.

Workfunction-tunable, N-doped reduced graphene transparent electrodes for high-performance polymer light-emitting diodes.

Graphene is a promising candidate to complement brittle and expensive transparent conducting oxides. Nevertheless, previous research efforts have paid little attention to reduced graphene, which can be of great benefit due to low-cost solution processing without substrate transfer. Here we demonstrate workfunction-tunable, highly conductive, N-doped reduced graphene film, which is obtainable from the spin-casting of graphene oxide dispersion and can be successfully employed as a transparent cathode for high-performance polymer light-emitting diodes (PLEDs) as an alternative to fluorine-doped tin oxide (FTO). The sheet resistance of N-doped reduced graphene attained 300 Ω/□ at 80% transmittance, one of the lowest values ever reported from the reduction of graphene oxide films. The optimal doping of quaternary nitrogen and the effective removal of oxygen functionalities via sequential hydrazine treatment and thermal reduction accomplished the low resistance. The PLEDs employing N-doped reduced graphene cathodes exhibited a maximum electroluminescence efficiency higher than those of FTO-based devices (4.0 cd/A for FTO and 7.0 cd/A for N-doped graphene at 17,000 cd/m(2)). The reduced barrier for electron injection from a workfunction-tunable, N-doped reduced graphene cathode offered this remarkable device performance.