Evaluation of stress distribution in and around dental implants using three different implant-abutment interfaces with platform-switched and non-platform-switched abutments: A three-dimensional finite element analysis.

ABSTRACT

Background: A key factor for the success or failure of an implant is how the stresses are transferred to the surrounding bone. The implant‒abutment connection (IAC) is paramount for implant success. The purpose of this finite element analysis (FEA) study was to evaluate the stress distribution in and around three different implant‒abutment interfaces with platform-switched and platform-matched abutments using the finite element method (FEM). Methods: Three distinct types of IAC were selected tri-channel internal connection, conical connection, and internal hex connection. Six models were generated, three in platform-switched and three in non-platform-switched configuration. Computer-Aided Three-Dimensional Interactive Application (CATIA) V5 R20 software was used to generate virtual models of the implants and the mandible. The models were transferred to Analysis of Systems (ANSYS) 15.0 software, in which the models were meshed and underwent FEA. Results: On the crestal bone, the highest von Mises stresses in platform-switched abutments were noticed in the internal hex implant‒abutment system (370 MPa), followed by the tri-channel implant‒abutment system (190 MPa) and conical implant‒abutment system (110 MPa). On the implant and the abutment screw, the highest von Mises stresses were observed in the internal hex implant‒abutment system, followed by the conical implant abutment system and tri-channel implant‒abutment system. Platform-switched implants had a more favorable stress distribution on crestal bone. Conclusion: Within the constraints of the current study, the internal hex connection exhibited the highest stress. In contrast, the conical abutment connection with platform switching configuration had more favorable stress distribution in crestal bone than other implant abutment systems.