RESUMEN
Materials exhibiting aggregation-induced emission (AIE) are both highly emissive in the solid state and prompt a strongly red-shifted emission and should therefore pose as good candidates toward emerging near-infrared (NIR) applications of organic semiconductors (OSCs). Despite this, very few AIE materials have been reported with significant emissivity past 700 nm. In this work, we elucidate the potential of ortho-carborane as an AIE-active component in the design of NIR-emitting OSCs. By incorporating ortho-carborane in the backbone of a conjugated polymer, a remarkable solid-state photoluminescence quantum yield of 13.4% is achieved, with a photoluminescence maximum of 734 nm. In contrast, the corresponding para and meta isomers exhibited aggregation-caused quenching. The materials are demonstrated for electronic applications through the fabrication of nondoped polymer light-emitting diodes. Devices employing the ortho isomer achieved nearly pure NIR emission, with 86% of emission at wavelengths longer than 700 nm and an electroluminescence maximum at 761 nm, producing a significant light output of 1.37 W sr-1 m-2.
RESUMEN
Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.
RESUMEN
Recent efforts in the field of organic photodetectors (OPD) have been focused on extending broadband detection into the near-infrared (NIR) region. Here, two blends of an ultralow bandgap push-pull polymer TQ-T combined with state-of-the-art non-fullerene acceptors, IEICO-4F and Y6, are compared to obtain OPDs for sensing in the NIR beyond 1100 nm, which is the cut off for benchmark Si photodiodes. It is observed that the TQ-T:IEICO-4F device has a superior IR responsivity (0.03 AW-1 at 1200 nm and -2 V bias) and can detect infrared light up to 1800 nm, while the TQ-T:Y6 blend shows a lower responsivity of 0.01 AW-1 . Device physics analyses are tied with spectroscopic and morphological studies to link the superior performance of TQ-T:IEICO-4F OPD to its faster charge separation as well as more favorable donor-acceptor domains mixing. In the polymer blend with Y6, the formation of large agglomerates that exceed the exciton diffusion length, which leads to high charge recombination, is observed. An application of these devices as biometric sensors for real-time heart rate monitoring via photoplethysmography, utilizing infrared light, is demonstrated.
Asunto(s)
Energía Solar , Rayos Infrarrojos , Monitoreo Fisiológico , Polímeros/químicaRESUMEN
Molecular doping is commonly utilized to tune the charge transport properties of organic semiconductors. However, applying this technique to electrically dope inorganic materials like metal oxide semiconductors is challenging due to the limited availability of molecules with suitable energy levels and processing characteristics. Herein, n-type doping of zinc oxide (ZnO) films is demonstrated using 1,3-dimethylimidazolium-2-carboxylate (CO2-DMI), a thermally activated organic n-type dopant. Adding CO2-DMI into the ZnO precursor solution and processing it atop a predeposited indium oxide (InOx) layer yield InOx/n-ZnO heterojunctions with increased electron field-effect mobility of 32.6 cm2 V-1 s-1 compared to 18.5 cm2 V-1 s-1 for the pristine InOx/ZnO bilayer. The improved electron transport originates from the ZnO's enhanced crystallinity, reduced hydroxyl concentrations, and fewer oxygen vacancy groups upon doping. Applying the optimally doped InOx/n-ZnO heterojunctions as the electron-transporting layers (ETLs) in organic photovoltaics (OPVs) yields cells with improved power conversion efficiency of 19.06%, up from 18.3% for devices with pristine ZnO, and 18.2% for devices featuring the undoped InOx/ZnO ETL. It is shown that the all-around improved OPV performance originates from synergistic effects associated with CO2-DMI doping of the thermally grown ZnO, highlighting its potential as an electronic dopant for ZnO and potentially other metal oxides.
RESUMEN
Organic materials combining high electron affinity with strong absorption in the visible spectrum are of interest for photodetector applications. In this study, we report two such molecular semiconductors, based upon an acceptor-donor-acceptor (A-D-A) approach. Coupling of an acceptor end group, 2,1,3-benzothiadiazole-4,5,6-tricarbonitrile (TCNBT), with a donor cyclopentadithiophene core affords materials with a band gap of 1.5 eV and low-lying LUMO levels around -4.2 eV. Both materials were readily synthesized by a one-pot nucleophilic displacement of a fluorinated precursor by cyanide. The two acceptors only differ in the nature of the solubilizing alkyl chain, which is either branched 2-ethyl hexyl (EH-TCNBT) or linear octyl (O-TCNBT). Both acceptors were blended with polymer donor PTQ10 as an active layer in OPDs. Significant device differences were observed depending on the alkyl chain, with the branched acceptor giving the optimum performance. Both acceptors exhibited very low dark current densities, with values up to 10-5 mA cm-2 at -2 V, highlighting the potential of the highly cyanated cores (TCNBT) as acceptor materials.