RESUMEN
Ternary chalcogenides, GeSb2Se3 and Ge3Sb4Se7, were synthesized and characterized. These chalcogenides are the first ternary selenides in a ternary Ge-Sb-Se system that feature a layer structure related to black phosphorus and SnSe-type structures. Both compounds contain a ∞1[Sb2Se2]2- unit with Sb+ cations in a zigzag Sb-Sb chain structure, and Sb3+ cations in a distorted NaCl100-type of ∞1[Gen-2Sb2Sen]2+ unit (n = 4, 5). These materials exhibit n-type semiconducting properties with thermal conductivity significantly lower than that of GeSe and Sb2Se3, which could be correlated to the 1D Sb+ chain and disordered sites with different Ge/Sb compositions. It is anticipated that these newly discovered ternary chalcogenides may provide unique properties with enhanced thermoelectric properties.
RESUMEN
Tin perovskite solar cells (TPSCs) were developed by adding the co-cations acetamidinium (AC) and rubidium (Rb) in varied proportions based on the FASnI3 structure (E1). We found that adding 10% AC and 3% Rb can optimize the device (E1AC10Rb3) to attain an efficiency of power conversion of 14.5% with great shelf- and light-soaking stability. The films at varied AC and Rb proportions were characterized using XPS, SEM, AFM, GIWAXS, XRD, TOPAS, TOF-SIMS, UV-vis, PL, TCSPC, and femtosecond TAS techniques to show the excellent optoelectronic properties of the E1AC10Rb3 film in comparison to those of the other films. AC was found to have the effect of passivating the vacancy defects on the surface and near the bottom of the film, while Rb plays a pivotal role in passivating the bottom interface between perovskite and PEDOT:PSS. Therefore, the E1AC10Rb3 device with a band gap of 1.43 eV becomes a promising candidate as a narrow band gap device for tandem lead-free perovskite solar cell development.