Gate-controlled Sb2S3 thin film photodetectors for logic switches.

Antimony sulfide (Sb2S3) photodetectors (PDs) have great potential in commercial applications. The performances are affected by photocarrier distribution and recombination. Here, the gate-controlled Sb2S3 thin film PD is fabricated on the TiO2/SiO2/Si substrate by the vacuum method. The p-channel Sb2S3 transistor obtained a threshold voltage of 0.6 V and a switching ratio of 1064, achieving an effective regulation by gate voltages. A negative gate voltage can enhance conductivity and can suppress recombination. The responsivity and detectivity of the PD reach 1.6 A/W and 1.2 × 1011 Jones, respectively. The device realizes logic outputs by the signal inputs of illumination and gate voltage.

10.24% Efficiency of Flexible Cu2 ZnSn(S,Se)4 Solar Cells by Pre-Evaporation Selenization Technique.

Flexible Cu2 ZnSn(S,Se)4 (CZTSSe) solar cells show great potential due to non-toxicity and low cost. The quality of CZTSSe absorber suffering from the high-temperature selenization process is the key to overcoming open-circuit voltage (VOC ) deficit and obtaining high efficiency. In this work, the authors develop a selenization technique to improve the quality of the CZTSSe layer by pre-evaporation selenization. This method provides saturated selenium vapor at the beginning of the selenization process to promote the crystallization process. The oversaturated selenium source greatly shortens the annealing time at high temperatures. The prepared CZTSSe films have larger grains and fewer voids. The measurement of the space charge limited current shows that the defect density of the CZTSSe absorber is significantly reduced from 4.43 × 1013  cm-3 to 3.46 × 1013 cm-3 . Electrical tests show that the devices have better charge separation at the interface, resulting in a charge recombination lifetime, increasing from 133 to 197 µs. The power conversion efficiency of the flexible CZTSSe solar cell reaches 10.24% with VOC and the fill factor enhances to 463 mV and 62%, respectively. The safe non-toxicity and efficient selenization method is expected to provide a new strategy for high-efficiency flexible CZTSSe solar cells.

Giant photoinduced inverse spin Hall effect of the surface states in three dimensional topological insulators Bi2Te3 with different thickness.

The photoinduced inverse spin Hall effect (PISHE) has been studied in three dimensional (3D) topological insulator (TI) Bi2Te3 thin films with different thicknesses (3, 5, 12 and 20 quintuple layer (QL)). The sign of the PISHE current flips only once in the 3- and 20-QL Bi2Te3 films, but it flips three times in the 5-, 7- and 12-QL samples. The three-times sign flip is due to the superposition of the PISHE current of the top and bottom surface states in Bi2Te3 films. By analyzing the x-ray photoelectron spectroscopy (XPS) of the Bi2Te3 films, we find that the top surface of the 3- and 20-QL Bi2Te3 films are severely oxidized, leading to only one sign flip in the PISHE. The PISHE contributed by the top and bottom surface states in Bi2Te3 films have been successfully separated by fitting a theoretical model to the PISHE current. The impact of the bulk states on PISHE current has been determined. The PISHE current is also measured at different light powers, and all the measurement results are in good agreement with the theoretical model. In addition, it is found that the PISHE current in Bi2Te3 films grown on Si substrate is more than two orders larger than that grown on SrTiO3 substrates, which can be attributed to the larger absorption coefficient for Bi2Te3/Si samples. It is revealed that the PISHE current in 3D TI Bi2Te3 is as large as 140 nA/W in the 3-QL Bi2Te3 film grown on Si substrate, which is more than one order larger than that reported in GaAs/AlGaAs heterojunction (about 2 nA/W) and GaN/AlGaN heterojunction (about 1.7 nA/W). The giant PISHE current demonstrates that the TIs with strong SOC may have good application prospects in spintronic devices with high spin-to-charge conversion efficiency.

Understanding the Adsorption and Desorption of Sitagliptin Phosphate Monohydrate on SS2343, Glass, and PTFE Using QCM-D and Raman Spectroscopy.

Cross-contamination during pharmaceutical drug manufacturing can result in expensive recalls. To counter that, companies spend significant time and resources to ensure equipment cleanliness, often relying on the compound solubility data in various solvents as the main indicator of cleaning success. The aim of this work is to provide an alternative way to analyze the fouling and cleaning of surfaces in pharmaceutical manufacturing processes by using the quartz crystal microbalance with dissipation (QCM-D) and Raman spectroscopy. In this study, we chose an active pharmaceutical ingredient (API), sitagliptin phosphate monohydrate (SIT), as the model drug compound and observed its adsorption and desorption on stainless steel (SS2343), borosilicate glass (glass), and polytetrafluoroethylene (PTFE) surfaces. SIT was selected as the model API since it is a product manufactured on a large scale and is part of the widely used dipeptidyl peptidase-IV inhibitor class of oral hypoglycemics used to treat type 2 diabetes mellitus, while the chosen surfaces mimic the wall materials of manufacturing equipment and components such as reactors, transfer lines, and valves. Both the QCM-D and Raman spectroscopy results show the highest physisorption on PTFE, followed by SS2343 and glass. Additionally, QCM-D revealed a harder removal of SIT from SS2343 compared to glass and PTFE. Raman analysis of the chemical interactions disclosed C-F and C═O bond interactions between SIT and the surfaces, and the lack of a peak shift suggested dipole-dipole interactions. Furthermore, contact angle measurements indicate that hydrophobic attraction contributed to SIT adhesion to the PTFE surface. Subsequently, SIT coverage upon deposition on a PTFE surface has a significantly smaller surface area than on SS2343 and glass due to surface hydrophobicity, hence resulting in a longer removal time. These results provide a practical use of QCM-D and Raman spectroscopy to enhance the understanding of fouling and improve the cleaning of complex small molecules on relevant surfaces during the pharmaceutical manufacturing process.

High-performance optical coherence velocimeter: theory and applications.

We proposed a high-performance optical coherence velocimeter (OCV) based on broadband optical interference which achieves spatial resolution from interference cancellation or enhancement of different components of the broadband light. There is a challengeable issue for OCV that the interference fringes become blurred when the velocity of detected object is relatively large, hindering the pace of OCV application in high-velocity field. To resolve this, the relationship between blurry coefficient and OCV system parameters (e.g., exposure time, central wavelength, bandwidth of source) was derived. It was found that blurry coefficient changed with oscillatory decay form and reached the minimum at each order blurry velocity. It showed that maximum measurable velocity of OCV systems could reach 10th order blurry velocity. The measurement of vibration of the loudspeaker driven by a function signal generator was employed to experimentally verify the velocity measurement performance of the system. The experiment demonstrated that the developed OCV can provide large velocity measurement ranges from static to 25.2 mm/s with nanometer-level precision and maximum measurable vibration frequency of up to 50 kHz. However, in theory, the theoretical maximum measurable velocity can be up to 1.06 m/s for current OCV configuration. The OCV has high precision, large dynamic range, and high-velocity measurement capability, making it attractive for applications in mechanical structure vibration monitoring and acoustic measurement.

Inverse spin Hall effect induced by linearly polarized light in the topological insulator Bi2Se3.

The inverse spin Hall effect (ISHE) induced by the normal incidence of linearly-polarized infrared radiation has been observed in the topological insulator Bi2Se3. A model has been proposed to explain the phenomenon, and the spin transverse force has been determined by the model fitting. The anomalous linear photogalvanic effect (ALPGE) is also observed, and the photoinduced momentum anisotropy is extracted. Furthermore, the ISHE and ALPGE are investigated at different temperatures between 77 and 300 K, and the temperature dependence of the spin transverse force and photoinduced momentum anisotropy are obtained. This study suggests a new way to investigate the inverse spin Hall effect via linearly polarized light even at room temperature.

4-Bromophenylhydrazinyl benzenesulfonylphenylureas as indoleamine 2,3-dioxygenase inhibitors with in vivo target inhibition and anti-tumor efficacy.

Indoleamine 2,3-dioxygenase is a heme-containing enzyme implicated in the down regulation of the anti-tumor immune response, and considered a promising anti-cancer drug target. Several pharmaceutical companies, including Pfizer, Merck, and Bristol-Myers Squibb, are known to be in pursuit of IDO inhibitors, and Incyte recently reported good results in the phase II clinical trial of the IDO inhibitor Epacadostat. In previous work, we developed a series of IDO inhibitors based on a sulfonylhydrazide core structure, and explored how they could serve as potent IDO inhibitors with good drug profiles. Herein, we disclose the development of the 4-bromophenylhydrazinyl benzenesulfonylphenylurea 5k, a potent IDO inhibitor which demonstrated 25% tumor growth inhibition in a murine CT26 syngeneic model on day 18 with 100 mg/kg oral administration twice daily, and a 30% reduction in tumor weight. Pharmacodynamic testing of 5k found it to cause a 25% and 21% reduction in kyn/trp ratio at the plasma and tumor, respectively. In the CT26 tumor model, 5k was found to slightly increase the percentage of CD3+ T cells and lymphocyte responsiveness, indicating that 5k may have potential in modulating anti-tumor immunity. These data suggest 5k to be worthy of further investigation in the development of anti-tumor drugs.

Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3.

The three-dimensional (3D) topological insulator (TI) Bi2Se3 exhibits topologically protected, linearly dispersing Dirac surface states (SSs). To access the intriguing properties of these SSs, it is important to distinguish them from the coexisting two-dimensional electron gas (2DEG) on the surface. Here, we use circularly polarized light to induce the inverse spin Hall effect in a Bi2Se3 thin film at different temperatures (i.e., from 77 to 300 K). It is demonstrated that the photoinduced inverse spin Hall effect (PISHE) of the top SSs and the 2DEG can be separated based on their opposite signs. The temperature and power dependence of the PISHE also confirms our method. Furthermore, it is found that the PISHE in the 2DEG is dominated by the extrinsic mechanism, as revealed by the temperature dependence of the PISHE.

Temperature dependence of spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/AlGaAs quantum wells.

Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect (CPGE) at inter-band excitation have been experimentally investigated in InGaAs/AlGaAs quantum wells at a temperature range of 80 to 290 K. It is found that, the sign of Rashba-type current reverses at low temperatures, while that of Dresselhaus-type remains unchanged. The temperature dependence of ratio of Rashba and Dresselhaus spin-orbit coupling parameters, increasing from -6.7 to 17.9, is obtained, and the possible reasons are discussed. We also develop a model to extract the Rashba-type effective electric field at different temperatures. It is demonstrated that excitonic effect will significantly influence the Rashba-type CPGE, while it has little effect on Dresselhaus-type CPGE.

Novel Nrf2/ARE activator, trans-Coniferylaldehyde, induces a HO-1-mediated defense mechanism through a dual p38α/MAPKAPK-2 and PK-N3 signaling pathway.

The induction of detoxifying enzymes and antioxidant proteins by chemopreventive agents protects cells from oxidizing substances capable of damaging DNA integrity and initiating carcinogenesis. Coniferyl aldehyde, a naturally occurring substance, has been found in many foods and edible plants. We and others previously demonstrated that trans-coniferylaldehyde (t-CA) has potential antimutagenic and antioxidant properties. However, the mechanism underlying its Nrf2-mediated antioxidant effect remains largely unknown. In the present study, we demonstrated that t-CA significantly stimulated antioxidant-responsive element (ARE)-driven luciferase activity in a cell model and increased the expression of ARE-dependent detoxifying/antioxidant genes and their protein products in vitro and in vivo. The detoxifying/antioxidant genes activated by t-CA, especially heme oxygenase-1 (HO-1), were found to be involved in its cytoprotective effects against oxidative stress and cell injuries elicited by carcinogens tert-butylhydroperoxide and arecoline. Furthermore, the t-CA-induced phosphorylation and nuclear translocation of nuclear factor erythroid-2-related factor 2 (Nrf2) played a crucial role in this ARE-mediated cellular defense. Moreover, we found that p38 MAPK and protein kinase C (PKC) signaling pathways participated in the t-CA-induced, Nrf2-mediated cytoprotective effect. Among them, p38α/MAPKAPK-2 and an atypical PKC, PK-N3, were critical for the activation of the Nrf2/HO-1 axis by t-CA. In conclusion, we demonstrated for the first time that t-CA attenuates carcinogen-induced oxidative stress by activating Nrf2 via p38α/MAPKAPK-2- and PK-N3-dependent signaling pathways. In addition, t-CA increased the level of Nrf2-mediated detoxifying/antioxidant proteins in vivo, suggesting that t-CA may have potential for use in the management of carcinogenesis and meriting further investigation.

Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires.

Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator Bi2Te3 nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of Bi2Te3 nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the Bi2Te3 nanowire on the Si substrate is an order of magnitude larger than that on SiO2, which may be due to the spin injection from the Si substrate to the Bi2Te3 nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the Bi2Te3 nanowire. This work suggests that topological insulator Bi2Te3 nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection.

Defect Synergistic Regulations of Li&Na Co-Doped Flexible Cu2 ZnSn(S,Se)4 Solar Cells Achieving over 10% Certified Efficiency.

Ion doping is an effective strategy for achieving high-performance flexible Cu2 ZnSn(S,Se)4 (CZTSSe) solar cells by defect regulations. Here, a Li&Na co-doped strategy is applied to synergistically regulate defects in CZTSSe bulks. The quality absorbers with the uniformly distributed Li and Na elements are obtained using the solution method, where the acetates (LiAc and NaAc) are as additives. The concentration of the harmful CuZn anti-site defects is decreased by 8.13% after Li incorporation, and that of the benign NaZn defects is increased by 36.91% after Na incorporation. Synergistic Li&Na co-doping enhances the carrier concentration and reduces the interfacial defects concentration by one order of magnitude. As a result, the flexible CZTSSe solar cell achieves a power conversion efficiency (PCE) of 10.53% with certified 10.12%. Because of the high PCE and the homogeneous property, the Li&Na co-doped device is fabricated to a large area (2.38 cm2 ) and obtains 9.41% PCE. The co-doping investigation to synergistically regulate defects provides a new perspective for efficient flexible CZTSSe solar cells.

Temperature dependence of anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference spectroscopy.

The temperature dependence of the mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser has been studied by reflectance difference spectroscopy at different temperatures ranging from 80 to 330 K. The anisotropic broadening width and the anisotropic integrated area of the cavity mode under different temperatures are also determined. The relation between the mode splitting and the birefringence is obtained by theoretical calculation using a Jones matrix approach. The temperature dependence of the energy position of the cavity mode and the quantum well transition are also determined by nearly normal reflectance and photoluminescence, respectively.

A systematic review and meta-analysis of factors related to non-suicidal self-injury among Chinese adolescents.

BACKGROUND: Over the past several decades the prevalence of adolescent non-suicidal self-injury (NSSI) has been rising steadily. Understanding the factors associated with NSSI is a critical public health concern. The current study aims to explore the critical factors related to NSSI among Chinese adolescents. METHODS: A systematic literature search was conducted to identify the studies meeting our eligibility criteria (published until June 2022) in PubMed, Web of Science, Science Direct, Springer Link, CNKI, VIP, and Wanfang data. The meta-package of R language was used to perform a meta-analysis to compute the pooled effect (r). RESULTS: A total of 59 studies were included in this analysis, with a sample size of 192,546. Twenty-four democratic, personal, and social factors were examined in current study. The pooled effect value (r) has revealed that 23 factors are associated with NSSI behaviors among Chinese adolescents. The factor, Internet addiction, has demonstrated the greatest association with NSSI compared to other factors. CONCLUSION: Consistent with previous studies on adolescent NSSI, findings have demonstrated that a number of demographic, personal, and social factors significantly contribute to NSSI behaviors among Chinese adolescents. Future research on prevention and intervention for adolescent NSSI may benefit from targeting these factors.

Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets.

Bismuth oxyselenide (Bi2O2Se) is a two-dimensional (2D) layered semiconductor material with high electron Hall mobility and excellent environmental stability as well as strong spin-orbit interaction (SOI), which has attracted intense attention for application in spintronic and spin optoelectronic devices. However, a comprehensive study of spin photocurrent and its microscopic origin in Bi2O2Se is still missing. Here, the helicity-dependent photocurrent (HDPC) was investigated in Bi2O2Se nanosheets. By analyzing the dependence of HDPC on the angle of incidence, we find that the HDPC originates from surface states with Cs symmetry in Bi2O2Se, which can be attributed to the circular photogalvanic effect (CPGE) and circular photon drag effect (CPDE). It is revealed that the HDPC current almost changes linearly with the source-drain voltage. Furthermore, we demonstrate effective tuning of HDPC in Bi2O2Se by ionic liquid gating, indicating that the spin splitting of the surface electronic structure is effectively tuned. By analyzing the gate voltage dependence of HDPC, we can unambiguously identify the surface polarity and the surface electronic structure of Bi2O2Se. The large HDPC in Bi2O2Se nanosheets and its efficient electrical tuning demonstrate that 2D Bi2O2Se nanosheets may provide a good platform for opto-spintronics devices.

Vertical Graphene Film Enables High-Performance Quasi-Solid-State Planar Zinc-Ion Microbatteries.

With the advantages of low cost, high safety, and environmental friendliness, quasi-solid-state zinc-ion microbatteries (ZIMBs) have received widespread attention in the field of flexible wearable devices and on-chip integratable energy storage. However, hysteresis Zn-ion transport kinetics and inhomogeneous growth of the zinc anode result in the poor capacity reversibility and cycling stability. Herein, a quasi-solid-state planar zinc-ion cell was developed by employing a vertical graphene (VG) film as an effective conductive modification layer for both the cathode and anode. The VG distinctly induces uniform Zn deposition/stripping, accelerates the charge transport, and enhances the adhesion between the active materials and current collectors. As a result, planar Zn@VG//MnO2@VG exhibits a high areal capacity of 159 µAh cm-2, a remarkably high areal energy/power density of 201.5 µWh cm-2/67.16 µW cm-2, and a high capacity retention of 95.6% at a bending angle of 180°. The proposed facile strategy for electrode modification provides a new insight into the design of high-performance flexible and planar ZIMBs.

Efficient Environmentally Friendly Flexible CZTSSe/ZnO Solar Cells by Optimizing ZnO Buffer Layers.

Flexible CZTSSe solar cells have attracted much attention due to their earth-abundant elements, high stability, and wide application prospects. However, the environmental problems caused by the high toxicity of the Cd in the buffer layers restrict the development of flexible CZTSSe solar cells. Herein, we develop a Cd-free flexible CZTSSe/ZnO solar cell. The influences of the ZnO films on device performances are investigated. The light absorption capacity of flexible CZTSSe solar cells is enhanced due to the removal of the CdS layer. The optimal thickness of the ZnO buffer layers and the appropriate annealing temperature of the CZTSSe/ZnO are 100 nm and 200 °C. Ultimately, the optimum flexible CZTSSe/ZnO device achieves an efficiency of 5.0%, which is the highest efficiency for flexible CZTSSe/ZnO solar cells. The systematic characterizations indicate that the flexible CZTSSe/ZnO solar cells based on the optimal conditions achieved quality heterojunction, low defect density and better charge transfer capability. This work provides a new strategy for the development of the environmentally friendly and low-cost flexible CZTSSe solar cells.

First-principles study on optoelectronic properties of Cs2PbX4-PtSe2 van der Waals heterostructures.

In order to achieve low-cost, high efficiency and stable photoelectric devices, two-dimensional (2D) inorganic halide perovskite photosensitive layers need to cooperate with other functional layers. Here, we investigate the structure, stability and optical properties of perovskite and transition metal dichalcogenide (TMD) heterostructures using first-principles calculations. Firstly, Cs2PbX4-PtSe2 (X = Cl, Br, I) heterostructures are stable because of negative interface binding energy. With the halogen varying from Cl to I, the interface binding energies of Cs2PbX4-PtSe2 heterostructures decrease rapidly. 2D Cs2PbCl4-PtSe2, Cs2PbBr4-PtSe2 and Cs2PbI4-PtSe2 heterostructures have an indirect bandgap with the value of 1.28, 1.02, and 1.29 eV, respectively, which approach the optimal bandgap (1.34 eV) for solar cells. In the contact state, the electrons transfer from the PtSe2 monolayer to Cs2PbX4 monolayer and only the Cs2PbBr4-PtSe2 heterostructure maintains the type-II band alignment. The Cs2PbBr4-PtSe2 heterostructure has the strongest charge transfer among the three Cs2PbX4-PtSe2 heterostructures because it has the lowest tunnel barrier height (ΔT) and the highest potential difference value (ΔEP). Furthermore, the light absorption coefficient of Cs2PbX4-MSe2 heterostructures is at least two times higher than that of monolayer 2D inorganic halide perovskites. With the halogen varying from Cl to I, the light absorption coefficients of the Cs2PbX4-PtSe2 heterostructures increase rapidly in the visible region. Above all, the Cs2PbX4-MSe2 heterostructures have broad application prospects in photodetectors, solar cells and other fields.

Achieving Uniform Li Plating/Stripping at Ultrahigh Currents and Capacities by Optimizing 3D Nucleation Sites and Li2 Se-Enriched SEI.

Lithium (Li) has garnered considerable attention as an alternative anodes of next-generation high-performance batteries owing to its prominent theoretical specific capacity. However, the commercialization of Li metal anodes (LMAs) is significantly compromised by non-uniform Li deposition and inferior electrolyte-anode interfaces, particularly at high currents and capacities. Herein, a hierarchical three-dimentional structure with CoSe2 -nanoparticle-anchored nitrogen-doped carbon nanoflake arrays is developed on a carbon fiber cloth (CoSe2 -NC@CFC) to regulate the Li nucleation/plating process and stabilize the electrolyte-anode interface. Owing to the enhanced lithiophilicity endowed by CoSe2 -NC, in situ-formed Li2 Se and Co nanoparticles during initial Li nucleation, and large void space, CoSe2 -NC@CFC can induce homogeneous Li nucleation/plating, optimize the solid electrolyte interface, and mitigate volume change. Consequently, the CoSe2 -NC@CFC can accommodate Li with a high areal capacity of up to 40 mAh cm-2 . Moreover, the Li/CoSe2 -NC@CFC anodes possess outstanding cycling stability and lifespan in symmetric cells, particularly under ultrahigh currents and capacities (1600 h at 10 mA cm-2 /10 mAh cm-2 and 5 mA cm-2 /20 mAh cm-2 ). The Li/CoSe2 -NC@CFC//LiFePO4 full cell delivers impressive long-term performance and favorable flexibility. The developed CoSe2 -NC@CFC provides insights into the development of advanced Li hosts for flexible and stable LMAs.

Self-Powered Sb2S3 Thin-Film Photodetectors with High Detectivity for Weak Light Signal Detection.

Photodetectors (PDs) for weak light signal detection have wide applications for optical communication and imaging. Antimony sulfide (Sb2S3) as a nontoxic and stable light-sensitive material becomes a promising candidate for weak light PDs, which are developing in the direction of high response, high speed, and low cost. Herein, a self-powered Sb2S3 PD with the structure of FTO/TiO2/Sb2S3/Au is developed to achieve weak light detection for 300-750 nm visible light. We control the Sb2S3 thickness with about 460 nm to match depletion region width (438 nm) and obtain an excellent photoresponsivity and 3 dB bandwidth. Furtherly, we prepare pyramid structure polydimethylsiloxane (PDMS) on the illuminating surface to enhance the performance of weak light detection by light-trapping effects. The photocurrent of Sb2S3 PD with 20 µm-sized PDMS texture achieves 13.6% improvement compared with the control one. Under weak 530 nm light illumination of 1 µW cm-2, the self-powered Sb2S3 PD with PDMS achieves high responsivity (3.41 A W-1), large detectivity (2.84 × 1013 Jones), and ultrafast speed (15 µs). The present Sb2S3 PD and light-trapping strategy are expected to provide an alternative to future commercial weak light detection applications.