Photodetector Based on Multilayer SnSe2 Field Effect Transistor.

We demonstrate a high-performance photodetector with multilayer tin diselenide (SnSe2) exfoliated from a high-quality crystal which was synthesized by the temperature gradient growth method. This SnSe2 photodetector exhibits high photoresponsivity of 5.11 × 105 A W-1 and high specific detectivity of 2.79 × 1013 Jones under laser irradiation (λ = 450 nm). We also observed a reproducible and stable time-resolved photoresponse to the incident laser beam from this SnSe2 photodetector, which can be used as a promising material for future optoelectronic applications.

Atomistic study of the alloying behavior of crystalline SnSe1-xSx.

Recently, layered chalcogenide alloys (LCAs) have been extensively investigated for use in various practical applications by selectively controlling the amount of foreign components. However, the alloying behavior of layered chalcogenides has been rarely explored at the atomistic level. Here, we study the microstructural evolution of SnSe1-xSx alloys on the atomic scale by combining scanning tunneling microscopy (STM) measurements with first-principles density functional theory (DFT) calculations. STM topographic images suggest that S atoms substituted in SnSe1-xSx are not randomly distributed, but tend to form local SnS clusters. The degree of S atom alloying was quantitatively estimated to be about 60% from STM images, indicating that homo-atoms (S-S) are a preferred arrangement over hetero-atoms (S-Se). Our DFT calculations further confirmed that the mixing energy of random SnSe1-xSx alloys showed positive behavior over the whole S composition range considered. This result suggests that SnSe1-xSx has a tendency toward local phase segregation into SnSe and SnS rather than random alloys. We expect our atomistic study on the alloying behavior to provide important insight for fabricating optimal SnSe1-xSx alloys with high thermoelectric properties.

A Systematic Study of the Temperature Dependence of the Dielectric Function of GaSe Uniaxial Crystals from 27 to 300 K.

We report the temperature dependences of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of the uniaxial crystal GaSe in the spectral energy region from 0.74 to 6.42 eV and at temperatures from 27 to 300 K using spectroscopic ellipsometry. The fundamental bandgap and strong exciton effect near 2.1 eV are detected only in the c-direction, which is perpendicular to the cleavage plane of the crystal. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that incorporates the Bose-Einstein statistical factor and the temperature coefficient to describe the electron-phonon interaction. To determine the origin of this anisotropy, we perform first-principles calculations using the mBJ method for bandgap correction. The results clearly demonstrate that the anisotropic dielectric characteristics can be directly attributed to the inherent anisotropy of p orbitals. More specifically, this prominent excitonic feature and fundamental bandgap are derived from the band-to-band transition between s and pz orbitals at the Γ-point.

Enhanced thermoelectric performance of SnSe by controlled vacancy population.

The thermoelectric performance of SnSe strongly depends on its low-energy electron band structure that provides high density of states in a narrow energy window due to the multi-valley valence band maximum (VBM). Angle-resolved photoemission spectroscopy measurements, in conjunction with first-principles calculations, reveal that the binding energy of the VBM of SnSe is tuned by the population of Sn vacancy, which is determined by the cooling rate during the sample growth. The VBM shift follows precisely the behavior of the thermoelectric power factor, while the effective mass is barely modified upon changing the population of Sn vacancies. These findings indicate that the low-energy electron band structure is closely correlated with the high thermoelectric performance of hole-doped SnSe, providing a viable route toward engineering the intrinsic defect-induced thermoelectric performance via the sample growth condition without an additional ex-situ process.

Spin Seebeck Effect in Iron Oxide Thin Films: Effects of Phase Transition, Phase Coexistence, And Surface Magnetism.

Understanding the effects of phase transition, phase coexistence, and surface magnetism on the longitudinal spin Seebeck effect (LSSE) in a magnetic system is essential to manipulate the spin to charge current conversion efficiency for spincaloritronic applications. We aim to elucidate these effects by performing a comprehensive study of the temperature dependence of the LSSE in biphase iron oxide (BPIO = α-Fe2O3 + Fe3O4) thin films grown on Si (100) and Al2O3 (111) substrates. A combination of a temperature-dependent anomalous Nernst effect (ANE) and electrical resistivity measurements show that the contribution of the ANE from the BPIO layer is negligible in comparison to the intrinsic LSSE in the Si/BPIO/Pt heterostructure, even at room temperature. Below the Verwey transition of the Fe3O4 phase, the total signal across BPIO/Pt is dominated by the LSSE. Noticeable changes in the intrinsic LSSE signal for both Si/BPIO/Pt and Al2O3/BPIO/Pt heterostructures around the Verwey transition of the Fe3O4 phase and the antiferromagnetic (AFM) Morin transition of the α-Fe2O3 phase are observed. The LSSE signal for Si/BPIO/Pt is found to be almost 2 times greater than that for Al2O3/BPIO/Pt; however, an opposite trend is observed for the saturation magnetization. Magnetic force microscopy reveals the higher density of surface magnetic moments of the Si/BPIO film in comparison to the Al2O3/BPIO film, which underscores the dominant role of interfacial magnetism on the LSSE signal and thereby explains the larger LSSE for Si/BPIO/Pt.

Tuning of Thermoelectric Properties of MoSe2 Thin Films Under Helium Ion Irradiation.

Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal conductivity. However, their thermoelectric parameters such as Seebeck coefficient, electrical conductivity, and thermal conductivity are interdependent, which is a drawback. Therefore, it is necessary to find a way to adjust one of these parameters without affecting the other parameters. In this study, we investigated the effect of helium ion irradiation on MoSe2 thin films with the objective of controlling the Seebeck coefficient and electrical conductivity. At the optimal irradiation dose of 1015 cm-2, we observed multiple enhancements of the power factor resulting from an increase in the electrical conductivity, with slight suppression of the Seebeck coefficient. Raman spectroscopy, X-ray diffraction, and transmission electron microscopy analyses revealed that irradiation-induced selenium vacancies played an important role in changing the thermoelectric properties of MoSe2 thin films. These results suggest that helium ion irradiation is a promising method to significantly improve the thermoelectric properties of two-dimensional transition metal dichalcogenides. Effect of He+ irradiation on thermoelectric properties of MoSe2 thin films.

High-performance polarization-sensitive photodetectors on two-dimensional ß-InSe.

Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and ß-phase) of InSe, only the crystal lattice of InSe in ß-phase (ß-InSe) belongs to a non-symmetry point group of [Formula: see text], which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of ß-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered ß-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of ß-InSe have been experimentally and theoretically proven, showing that the ß-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify ß-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.

Atomic Layer Deposition of Sb2 Te3 /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory.

Atomic layer deposition (ALD) of Sb2 Te3 /GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO2 insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb2 Te3 enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge2 Sb2 Te5 alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge2 Sb2 Te5 alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.

Thickness-dependent in-plane anisotropy of GaTe phonons.

Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm-1. Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three Ag modes at 40.2 ([Formula: see text]), 152.5 ([Formula: see text]), and 283.8 ([Formula: see text]) cm-1 exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis.

Optical phonons of SnSe(1-x)Sx layered semiconductor alloys.

The evolution of the optical phonons in layered semiconductor alloys SnSe(1-x)Sx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the Ag2 mode of SnSe(1-x)Sx (0 ≤ x ≤ 1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of Ag1, Ag2 and B3g1 in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B3g2, Ag3 and Ag4 show two-mode behavior.

Temperature dependence of the dielectric function and critical points of α-SnS from 27 to 350 K.

We report the temperature dependence of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of biaxial α-SnS in the spectral energy region from 0.74 to 6.42 eV and temperatures from 27 to 350 K using spectroscopic ellipsometry. Bulk SnS was grown by temperature gradient method. Dielectric response functions were obtained using multilayer calculations to remove artifacts due to surface roughness. We observe sharpening and blue-shifting of CPs with decreasing temperature. A strong exciton effect is detected only in the armchair direction at low temperature. New CPs are observed at low temperature that cannot be detected at room temperature. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose-Einstein statistical factor and the temperature coefficient for describing the electron-phonon interaction.

Polytypism in few-layer gallium selenide.

Gallium selenide (GaSe) is one of the layered group-III metal monochalcogenides, which has an indirect bandgap in the monolayer and a direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X = S and Se). Four polytypes of bulk GaSe, designated as ß-, ε-, γ-, and δ-GaSe, have been reported. Since different polytypes result in different optical and electrical properties even with the same thickness, identifying the polytype is essential in utilizing this material for various optoelectronic applications. We performed polarized Raman measurements on GaSe and found different ultra-low-frequency Raman spectra of inter-layer vibrational modes even with the same thickness due to different stacking sequences of the polytypes. By comparing the ultra-low-frequency Raman spectra with the theoretical calculations and high-resolution electron microscopy measurements, we established the correlation between the ultra-low-frequency Raman spectra and the stacking sequences of trilayer GaSe. We further found that the AB-type stacking is more stable than the AA'-type stacking in GaSe.

Induced high-temperature ferromagnetism by structural phase transitions in strained antiferromagnetic γ-Fe50Mn50 epitaxial films.

Strain effects in epitaxial films can substantially enhance individual functional properties or induce properties which do not exist in corresponding bulk materials. The bcc α-Fe50Mn50 films are a ferromagnetic with a Curie temperature between 650 K and 750 K, which do not exist in nature can be manipulated through the tensile strain. In this study, γ-Fe50Mn50 epitaxial films grown on GaAs(001) using molecular beam epitaxy are found to structural transition from the face-centered-cubic (fcc, a = 0.327 nm) γ-phase to the body-centered-cubic (bcc, a = 0.889 nm) α-phase. For α-Fe50Mn50 epitaxial films, ferromagnetism is accompanied by structural phase transition due to the tensile strain induced by the differences of the thermal expansion between the film and the substrate. Moreover, by realizing in epitaxial films with fcc structure a tensile strain state, phase transitions were introduced Fe-Mn alloy system with bcc structure. These findings are of fundamental importance to understanding the mechanism of phase transition and properties of epitaxial CuAu-I type antiferromagnetic alloy thin films under strain.

Interface morphology effect on the spin mixing conductance of Pt/Fe3O4 bilayers.

Non-magnetic (NM) metals with strong spin-orbit coupling have been recently explored as a probe of interface magnetism on ferromagnetic insulators (FMI) by means of the spin Hall magnetoresistance (SMR) effect. In NM/FMI heterostructures, increasing the spin mixing conductance (SMC) at the interface comes as an important step towards devices with maximized SMR. Here we report on the study of SMR in Pt/Fe3O4 bilayers at cryogenic temperature, and identify a strong dependence of the determined real part of the complex SMC on the interface roughness. We tune the roughness of the Pt/Fe3O4 interface by controlling the growth conditions of the Fe3O4 films, namely by varying the thickness, growth technique, and post-annealing processes. Field-dependent and angular-dependent magnetoresistance measurements sustain the clear observation of SMR. The determined real part of the complex SMC of the Pt/Fe3O4 bilayers ranges from 4.96 × 1014 Ω-1 m-2 to 7.16 × 1014 Ω-1 m-2 and increases with the roughness of the Fe3O4 underlayer. We demonstrate experimentally that the interface morphology, acting as an effective interlayer potential, leads to an enhancement of the spin mixing conductance.

Thermoelectric Properties of Hot-Pressed Bi-Doped n-Type Polycrystalline SnSe.

ᅟ: We report on the successful preparation of Bi-doped n-type polycrystalline SnSe by hot-press method. We observed anisotropic transport properties due to the (h00) preferred orientation of grains along the pressing direction. The electrical conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 12.85 and 6.46 S cm-1 at 773 K for SnSe:Bi 8% sample, respectively, while thermal conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 0.81 and 0.60 W m-1 K-1 at 773 K for SnSe:Bi 8% sample, respectively. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition, whose transition temperature increases with Bi concentration. Our work addressed a possibility to dope polycrystalline SnSe by a hot-pressing process, which may be applied to module applications. HIGHLIGHTS: 1. We have successfully achieved Bi-doped n-type polycrystalline SnSe by the hot-press method. 2. We observed anisotropic transport properties due to the [h00] preferred orientation of grains along pressing direction. 3. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition.

Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals.

Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of -2.1 × 1019 cm-3 at 773 K.

Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films.

We investigated the effect of single and multidopants on the thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO films improved the conductivity and mobility but lowered the Seebeck coefficient. Dual Ga- and In-doped ZnO thin films show slightly decreased electrical conductivity but improved Seebeck coefficient. The variation of thermoelectric properties is discussed in terms of film crystallinity, which is subject to the dopants' radius. Small amounts of In dopants with a large radius may introduce localized regions in the host film, affecting the thermoelectric properties. Consequently, a 1.5 times increase in power factor, three times reduction in thermal conductivity, and 5-fold enhancement in the figure of merit ZT have been achieved at 110 °C. The results also indicate that the balanced control of both electron and lattice thermal conductivities through dopant selection are necessary to attain low total thermal conductivity.

Microwave absorption measurements using a broad-band meanderline approach.

We describe a technique that permits broad-band, field-dependent ferromagnetic and electron paramagnetic resonance absorption measurements that is applicable to thin films and patterned micro-/nanostructured arrays and is based on a wire-wound meanderline approach. Techniques to prepare meanderlines and perform microwave measurements are described along with some demonstrations involving an electron paramagnetic resonance calibration/test material, 2,2-diphenyl-1-picryl-hydrazyl, and a ferromagnetic cobalt thin film.

Spatial chemical inhomogeneity and local electronic structure of Mn-doped Ge ferromagnetic semiconductors.

We have investigated the chemical distributions and the local electronic structure of potential diluted magnetic semiconductor Ge0.94Mn0.06 single crystals using scanning photoelectron microscopy (SPEM), x-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES). The SPEM image shows the stripe-shaped microstructures, which arise from the chemical phase separation between the Mn-rich and Mn-depleted phases. The Mn 2p XAS shows that the Mn ions in the Mn-rich region are in the divalent high-spin Mn2+ states but that they do not form metallic Mn clusters. The Mn 3d PES spectrum exhibits a peak centered at approximately 4 eV below E(F) and the negligible spectral weight near E(F). This study suggests that the observed ferromagnetism in Ge1-xMnx arises from the phase-separated Mn-rich phase.

Room-temperature ferromagnetism in (Zn1-xMnx)GeP2 semiconductors.

We report on the discovery of a room-temperature ferromagnetic semiconductor in chalcopyrite (Zn1-xMnx)GeP2 with Tc = 312 K. We have also observed that, at temperatures below 47 K, samples for x = 0.056 and 0.2 show a transition to the antiferromagnetic (AFM) state, so that ferromagnetism is well defined to be present between 47 and 312 K. The observation that the AFM phase is most stable at low temperatures is consistent with the predictions of full-potential linearized augmented plane wave total energy calculations and has consequences for other chalcopyrite materials.