Synthesis, Characterization and TFT Characteristics of Diketopyrrolopyrrole Based Copolymer.

A novel diketopyrrolopyrrole (DPP) based low band gap polymer, poly[4,8-bis(triisopropylsilylethynyl) benzo[1,2-b:4,5-b']dithiophene-2,6-diyl-alt-[2,5-di-hexyl-3,6-dithiophen-2-ylpyrrolo[3,4-c]pyrrole-1,4-dione] (PTIPSBDT-DPP) is synthesized by Stille polymerization for use in thin film transistor (TFTs). The new polymer contain extended aromatic π-conjugated segments alternating with the DPP units and are designed to increase the free energy for charge generation to overcome current limitations in photocurrent generation. In this study we describe the synthesis, thermal stability, optical, electrochemical properties and TFT characteristics.

Heterogeneous Charge-Transfer Nanorods by Strained Melt-Molding Lithography.

Hetero-nanorods consisting of two charge-transfer (CT) complexes were fabricated by the strained melt-molding lithography. Utilizing the lowered melting temperature by the formation of eutectic mixture, various well-defined CT complex nanorods can be easily fabricated by soft-lithography-assisted melt crystallization below 100 degrees C. Hetero-nanorods were fabricated by selective doping of the secondary CT complex at defects induced by applying the uniaxial strain.

Polymers based on thieno[3,4-c]pyrrole-4,6-dione and pyromellitic diimide by CH-CH arylation reaction for high-performance thin-film transistors.

Three homopolymers were successfully synthesized by direct CH-CH arylation polymerization of thieno[3,4-c]pyrrole-4,6-dione or pyromellitic diimide derivatives affording highly purified polymers with high molecular weights (43.0-174.7 K). Thieno[3,4-c]pyrrole-4,6-dione and pyromellitic diimide derivatives are considered as electron-withdrawing units. The synthesized homopolymers P1, P2, and P3 showed band gaps in the range of 2.13-2.08 eV, respectively. The electron mobilities of the three homopolymers have been investigated. The thin film transistor for P1 prepared by the eutectic-melt-assisted nanoimprinting method achieved an electron mobility of 2.11 × 10-3 cm2 s-1 V-1. Based on the obtained results, the synthesized polymers can be used as potential electron acceptors in solar cell applications.

Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization.

Organic semiconductors including rubrene, Alq3, copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (Tm > 300 °C) are melted and crystallized at low temperature (Te = 40.8-133 °C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.