WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications.

Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibits a p-type behavior in ambient conditions, with a hole mobility µp ≈  1.4 cm2V-1s-1 and a subthreshold swing SS ≈ 10 V dec-1. Current-voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self-powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R ≈ 10 mAW-1 at 2 V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two-state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well-separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.

Advanced Field-Effect Sensors.

Sensors based on the field-effect principle have been used for more than fifty years in a variety of applications ranging from bio-chemical sensing to radiation detection or environmental parameter monitoring [...].

Screen-printed graphite electrode modified with Co3O4nanoparticles and 2D graphitic carbon nitride as an effective electrochemical sensor for 4-aminophenol detection.

We fabricated a new electrochemical 4-aminophenol sensor based on a nanocomposite of Co3O4nanoparticles and graphite carbon nitride (Co3O4@g-C3N4), used for the modification of a screen-printed electrode (Co3O4@g-C3N4/SPE). The synthesized nanocomposite was characterized using field-emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, x-ray diffraction and Fourier transform-infrared (FT-IR) techniques. The electro-oxidation of 4-aminophenol in phosphate buffer solution (pH = 7.0) was investigated via cyclic voltammetry, differential pulse voltammetry and chronoamperometry. The peak current of oxidation in the optimized conditions had a linear relationship with various 4-aminophenol contents (0.05-780.0µM) with a correlation coefficient of 0.9996 and the limit of detection (S/N = 3) of 1.5 × 10-8M. The developed method was successful to determine 4-aminophenol in real specimens, with acceptable outcomes.

A Comprehensive Review of Metal-Organic Framework: Synthesis, Characterization, and Investigation of Their Application in Electrochemical Biosensors for Biomedical Analysis.

Many studies have addressed electrochemical biosensors because of their simple synthesis process, adjustability, simplification, manipulation of materials' compositions and features, and wide ranges of detection of different kinds of biomedical analytes. Performant electrochemical biosensors can be achieved by selecting materials that enable faster electron transfer, larger surface areas, very good electrocatalytic activities, and numerous sites for bioconjugation. Several studies have been conducted on the metal-organic frameworks (MOFs) as electrode modifiers for electrochemical biosensing applications because of their respective acceptable properties and effectiveness. Nonetheless, researchers face challenges in designing and preparing MOFs that exhibit higher stability, sensitivity, and selectivity to detect biomedical analytes. The present review explains the synthesis and description of MOFs, and their relative uses as biosensors in the healthcare sector by dealing with the biosensors for drugs, biomolecules, as well as biomarkers with smaller molecular weight, proteins, and infectious disease.

Enhanced electrochemical performance of MnNi2O4/rGO nanocomposite as pseudocapacitor electrode material and methanol electro-oxidation catalyst.

Binary transition metal oxides with encouraging electrocatalyst properties have been suggested as electrode materials for supercapacitors and methanol oxidation. Hence, in this work, a binary mixed metal oxide based on nickel and manganese (MnNi2O4) and its hybrid with reduced graphene oxide were synthesized by a one-step hydrothermal method. After physical and morphological characterization, the potential of these nanostructures was investigated for use as supercapacitor electrodes and methanol electro-oxidation. The results of the electrochemical analysis showed a substantial effect of adding rGO to the MnNi2O4. The MnNi2O4/rGO hybrid electrode supercapacitor exhibited good stability of 93% after 2000 consecutive CV cycles and a specific capacitance of 575 F g-1at the current density of 0.5 A g-1. Furthermore, the application of this hybrid nanomaterial in the methanol electro-oxidation reaction (MOR) indicated its appropriate electrochemical efficiency and stability in methanol oxidation. Our results show that MnNi2O4/rGO can be considered as a promising electrode material for energy applications.

WS2 Nanotubes: Electrical Conduction and Field Emission Under Electron Irradiation and Mechanical Stress.

This study reports the electrical transport and the field emission properties of individual multi-walled tungsten disulphide (WS2 ) nanotubes (NTs) under electron beam irradiation and mechanical stress. Electron beam irradiation is used to reduce the nanotube-electrode contact resistance by one-order of magnitude. The field emission capability of single WS2 NTs is investigated, and a field emission current density as high as 600 kA cm-2 is attained with a turn-on field of ≈100 V µm-1 and field-enhancement factor ≈50. Moreover, the electrical behavior of individual WS2 NTs is studied under the application of longitudinal tensile stress. An exponential increase of the nanotube resistivity with tensile strain is demonstrated up to a recorded elongation of 12%, thereby making WS2 NTs suitable for piezoresistive strain sensor applications.

Green synthesis of CuO- and Cu2O-NPs in assistance with high-gravity: The flowering of nanobiotechnology.

This study, for the first time, reports the synthesis of CuO- and Cu2O nanoparticles (NPs) using the Salvia hispanica extract by a high-gravity technique. The original green synthesis procedure led to the formation of nanoparticles with promising catalytic and biological properties. The synthesized nanoparticles were fully characterized and their catalytic activity was evaluated through a typical Azide-Alkyne Cycloaddition (AAC) reaction. The potential antibacterial activity against gram positive (S. aureus) and gram negative (E. coli) bacteria were investigated. It was shown that the antibacterial properties were independent of the NP morphology as well as of the texture of the synthesis media. As a result, the presently synthesized nanoparticles showed very good photocatalytic and catalytic activities in comparison with the literature. From a biological perspective, they showed lower cytotoxicity in comparison with the literature, and also showed higher antioxidant and antibacterial activities. Thus, these present green CuO and Cu2O nanoparticles deserve further attention to improve numerous medical applications.

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors.

We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 104 s, due to photo-charge trapping at the MoS2/SiO2 interface and in MoS2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of [Formula: see text] ON current as high as [Formula: see text] 105 ON-OFF ratio, mobility of ∼1 cm2 V-1 s-1 and photoresponsivity [Formula: see text].

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays.

We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use x-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission (FE) current from the GeSn-nanoparticles, with turn on field of [Formula: see text] and field enhancement factor ߠ∼ 100 at anode-cathode distance of ∼0.6 µm. We prove that FE can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors.

Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures. Herein, we study a device that exhibits mobility up to 100 cm2 V-1 s-1 and a memory window up to 1.3 µA. Exposure to a supercontinuum white light source reveals that negative photoconductivity (NPC) and positive photoconductivity (PPC) coexist in the same device. Such behavior is attributed to the chemisorbed O2 molecules, with a minor role of physisorbed H2O molecules. The coexistence of NPC and PPC can be exploited in neuromorphic vision sensors, requiring the human eye retina to process the optical signals through alerting and protection (NPC), adaptation (PPC), followed by imaging and processing. Our results open new avenues for the use of BP and other two-dimentional (2D) semiconducting materials in transistors, memories, and neuromorphic vision sensors for advanced applications in robotics, self-driving cars, etc.

Lanthanum(III)hydroxide Nanoparticles and Polyethyleneimine-Functionalized Graphene Quantum Dot Nanocomposites in Photosensitive Silicon Heterojunctions.

Lanthanides are largely used in optoelectronics as dopants to enhance the physical and optical properties of semiconducting devices. In this study, lanthanum(III)hydroxide nanoparticles (La(OH)3NPs) are used as a dopant of polyethylenimine (PEI)-functionalized nitrogen (N)-doped graphene quantum dots (PEI-NGQDs). The La(OH)3NPs-dopedPEI-NGQDs nanocomposites are prepared from La(NO)3 in a single step by a green novel method and are characterized by Fourier-transform infrared spectroscopy (FT-IR), ultraviolet-visible spectroscopy (UV-vis), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Deposited over an n-type Si wafer, the La(OH)3NPs-dopedPEI-NGQDs nanocomposites form Schottky diodes. The I-V characteristics and the photoresponse of the diodes are investigated as a function of the illumination intensity in the range 0-110 mW cm-2 and at room temperature. It is found that the rectification ratio and ideality factor of the diode decrease, while the Schottky barrier and series resistance increase with the enhancing illuminations. As a photodetector, the La(OH)3NPs-dopedPEI-NGQDs/n-Si heterojunction exhibits an appreciable responsivity of 3.9 × 10-3 AW-1 under 22 mW cm-2 at -0.3 V bias and a maximum detectivity of 8.7 × 108 Jones under 22 mW cm-2 at -0.5 V. This study introduces the green synthesis and presents the structural, electrical, and optoelectronic properties of La(OH)3NPs-dopedPEI-NGQDs, demonstrating that these nanocomposites can be promising for optoelectronic applications.

Fully printed memristors made with MoS2 and graphene water-based inks.

2-Dimensional materials (2DMs) offer an attractive solution for the realization of high density and reliable memristors, compatible with printed and flexible electronics. In this work we fabricate a fully inkjet printed MoS2-based resistive switching memory, where graphene is used as top electrode and silver is used as bottom electrode. Memristic effects are observed only after annealing of each printed component. The printed memory on silicon shows low SET/RESET voltage, short switching times (less than 0.1 s) and resistance switching ratios of 103-105, comparable or superior to the performance obtained in devices with both printed silver electrodes on rigid substrates. The same device on Kapton shows resistance switching ratios of 102-103 and remains stable at least up to 2% of strain. The memristor resistance switching is attributed to the formation of Ag conductive filaments, which can be suppressed by integrating graphene grown by chemical vapour deposition (CVD) onto the silver electrode. Temperature-dependent electrical measurements starting from 200 K show that memristic behavior appears at a temperature of ∼300 K, confirming that an energy threshold is needed to form the conductive filament. This work shows that inkjet printing is a very powerful technique for the fabrication of 2DMs-based resistive switches onto rigid and flexible substrates.

Multilayer WS2 for low-power visible and near-infrared phototransistors.

Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 µA/W) around 1250 nm, making the devices promising for telecommunication applications.

Methanol and Ethanol Electrooxidation on ZrO2/NiO/rGO.

Recently, transition metal oxides have been considered for various applications due to their unique properties. We present the synthesis of a three-component catalyst consisting of zirconium oxide (ZrO2), nickel oxide (NiO), and reduced graphene oxide (rGO) in the form of ZrO2/NiO/rGO by a simple one-step hydrothermal method. X-ray powder diffraction (XRD), scanning electron microscope (SEM), and bright-field transmission electron microscopy (BF-TEM) analyses were performed to accurately characterize the catalysts. Cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and linear sweep voltammetry (LSV) analyses were also carried out to investigate the methanol and ethanol alcohol electrooxidation ability of the synthesized nanocatalysts. Inspired by the good potential of metal oxides in the field of catalysts, especially in fuel-cell anodes, we investigated the capability of this catalyst in the methanol oxidation reaction (MOR) and ethanol oxidation reaction (EOR). After proving the successful synthesis and examining the surface morphology of these materials, detailed electrochemical tests were performed to show the outstanding capability of this new nanocatalyst for use in the anode of alcohol fuel cells. ZrO2/NiO/rGO indicated a current density of 26.6 mA/cm2 at a peak potential of 0.52 V and 99.5% cyclic stability in the MOR and a current density of 17.3 mA/cm2 at a peak potential of 0.52 V and 98.5% cyclic stability in the EOR (at optimal concentration/scan rate 20 mV/s), representing an attractive option for use in the anode of alcoholic fuel cells.

A New Electrochemical Sensor for the Detection of Ketoconazole Using Carbon Paste Electrode Modified with Sheaf-like Ce-BTC MOF Nanostructure and Ionic Liquid.

An ultrasensitive and selective voltammetric sensor with an ultratrace-level detection limit is introduced for ketoconazole (KTC) determination in real samples using a modified carbon paste electrode with a sheaf-like Ce-BTC MOF nanostructure and ionic liquid. The as-synthesized nanostructure was characterized by several techniques, including energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and field emission scanning electron microscopy (FE-SEM). The electrocatalytic performance of the developed electrode was observed by cyclic voltammetry (CV), differential pulse voltammetry (DPV), linear sweep voltammetry (LSV), and chronoamperometry. The limit of detection (LOD) of the developed sensor for KTC is 0.04 µM, and the response was found to be in the dynamic concentration range of 0.1-110.0 µM in a phosphate buffer solution. The proposed electrode exhibits acceptable electrocatalytic activity for KTC oxidation with a high sensitivity of 0.1342 µA·µM-1. The ability of the fabricated sensor to monitor KTC in real aqueous samples is demonstrated using standard addition data.

Spatially Resolved Photo-Response of a Carbon Nanotube/Si Photodetector.

Photodetectors based on vertical multi-walled carbon nanotube (MWCNT) film-Si heterojunctions are realized by growing MWCNTs on n-type Si substrates with a top surface covered by Si3N4 layers. Spatially resolved photocurrent measurements reveal that higher photo detection is achieved in regions with thinner MWCNT film, where nearly 100% external quantum efficiency is achieved. Hence, we propose a simple method based on the use of scotch tape with which to tune the thickness and density of as-grown MWCNT film and enhance device photo-response.

Transition-Metal Dichalcogenides in Electrochemical Batteries and Solar Cells.

The advent of new nanomaterials has resulted in dramatic developments in the field of energy production and storage. Due to their unique structure and properties, transition metal dichalcogenides (TMDs) are the most promising from the list of materials recently introduced in the field. The amazing progress in the use TMDs for energy storage and production inspired us to review the recent research on TMD-based catalysts and electrode materials. In this report, we examine TMDs in a variety of electrochemical batteries and solar cells with special focus on MoS2 as the most studied and used TMD material.

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2.

The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors (FETs) have been widely studied; however, only a few works have investigated the photocurrent as a function of temperature. In this paper, we perform the electrical characterization of few-layer ReS2-based FETs with Cr-Au contacts over a wide temperature range. We exploit the temperature-dependent transfer and output characteristics to estimate the effective Schottky barrier at the Cr-Au/ReS2 interface and to investigate the temperature behavior of parameters, such as the threshold voltage, carrier concentration, mobility, and subthreshold swing. Through time-resolved photocurrent measurements, we show that the photocurrent increases with temperature and exhibits a linear dependence on the incident light power at both low and room temperatures and a longer rise/decay time at higher temperatures. We surmise that the photocurrent is affected by the photobolometric effect and light-induced desorption of adsorbates which are facilitated by the high temperature and the low pressure.

Manipulation of the electrical and memory properties of MoS2 field-effect transistors by highly charged ion irradiation.

Field-effect transistors based on molybdenum disulfide (MoS2) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or defects either in the MoS2 lattice or in the underlying substrate. We fabricated MoS2 field-effect transistors on SiO2/Si substrates, irradiated these devices with Xe30+ ions at a kinetic energy of 180 keV to deliberately introduce defects and studied the resulting changes of their electrical and hysteretic properties. We find clear influences of the irradiation: while the charge carrier mobility decreases linearly with increasing ion fluence (up to only 20% of its initial value) the conductivity actually increases again after an initial drop of around two orders of magnitude. We also find a significantly reduced n-doping (≈1012 cm-2) and a well-developed hysteresis after the irradiation. The hysteresis height increases with increasing ion fluence and enables us to characterize the irradiated MoS2 field-effect transistor as a memory device with remarkably longer relaxation times (≈ minutes) compared to previous works.

Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures.

Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention due to its potential applications in field-effect transistors (FETs), photodetectors, and memories. In this work, we investigate the suppression of the subthreshold current during the forward voltage gate sweep, leading to an inversion of the hysteresis in the transfer characteristics of ReS2 nanosheet-based FETs from clockwise to anticlockwise. We explore the impact of temperature, sweeping gate voltage, and pressure on this behavior. Notably, the suppression in current within the subthreshold region coincides with a peak in gate current, which increases beyond a specific temperature but remains unaffected by pressure. We attribute both the suppression in drain current and the presence of peak in gate current to the charge/discharge process of gate oxide traps by thermal-assisted tunnelling. The suppression of the subthreshold current at high temperatures not only reduces power consumption but also extends the operational temperature range of ReS2 nanosheet-based FETs.