Suppression of non-radiative recombination to improve performance of colloidal quantum-dot LEDs with a Cs2CO3 solution treatment.

We report a five-fold luminance increase of green-light-emitting CdSe@ZnS quantum-dot LEDs (QLEDs) in response to treatment with a 2-ethoxyethanol solution of cesium carbonate (Cs2CO3). The maximum luminous yield of Cs2CO3-treated QLED is as high as 3.41 cd A-1 at 6.4 V. To elucidate device-performance improvement, we model measured currents as the sum of radiative and non-radiative recombination components, which are respectively represented by modified Shockley equations. Variations in model parameters show that a shift in Fermi level, reduction of barrier heights, and passivation of mid-gap defect states are the main results of Cs2CO3 treatment. In spite of a large luminance difference, light-extraction efficiency remains the same at 9% regardless of Cs2CO3 treatment because of the similarity in optical structures.

Impact of 1,2-ethanedithiol treatment on luminescence and charge-transport characteristics in colloidal quantum-dot LEDs.

We report on a substantial increase in luminance and luminous efficiency of green-light emitting devices (LEDs) that use colloidal CdSe@ZnS quantum dots (QDs) as a light-emitting material in response to treatment with 1,2-ethanedithiol (EDT). The maximum luminance increased from 1146 to 8075 cd m-2, and luminous yield from 0.15 to 1.41 cd A-1 as a result of treating an incomplete device with drops of EDT right after spin-coating QDs onto a ZnO-nanoparticle layer. Based on systematic studies on substrate-dependent change in photoluminescence, and current-voltage and luminance-voltage characteristics, we propose that passivation of intra-gap defect states and relative shifts of energy levels relevant to the operation of QD LEDs are two main results of EDT treatment. In particular, we argue that energy-level shift without emission-color change can be attributed to surface-dipole effects.

Photodetector Based on Multilayer SnSe2 Field Effect Transistor.

We demonstrate a high-performance photodetector with multilayer tin diselenide (SnSe2) exfoliated from a high-quality crystal which was synthesized by the temperature gradient growth method. This SnSe2 photodetector exhibits high photoresponsivity of 5.11 × 105 A W-1 and high specific detectivity of 2.79 × 1013 Jones under laser irradiation (λ = 450 nm). We also observed a reproducible and stable time-resolved photoresponse to the incident laser beam from this SnSe2 photodetector, which can be used as a promising material for future optoelectronic applications.

Intergranular Spin Dependent Tunneling Dominated Magnetoresistance in Helimagnetic Manganese Phosphide Thin Films.

Helical magnets are emerging as a novel class of materials for spintronics and sensor applications; however, research on their charge- and spin-transport properties in a thin film form is less explored. Herein, we report the temperature and magnetic field-dependent charge transport properties of a highly crystalline MnP nanorod thin film over a wide temperature range (2 K < T < 350 K). The MnP nanorod films of ~100 nm thickness were grown on Si substrates at 500 °C using molecular beam epitaxy. The temperature-dependent resistivity ρ(T) data exhibit a metallic behavior (dρ/dT > 0) over the entire measured temperature range. However, large negative magnetoresistance (Δρ/ρ) of up to 12% is observed below ~50 K at which the system enters a stable helical (screw) magnetic state. In this temperature regime, the Δρ(H)/ρ(0) dependence also shows a magnetic field-manipulated CONE + FAN phase coexistence. The observed magnetoresistance is dominantly governed by the intergranular spin dependent tunneling mechanism. These findings pinpoint a correlation between the transport and magnetism in this helimagnetic system.

Spin Seebeck Effect in Iron Oxide Thin Films: Effects of Phase Transition, Phase Coexistence, And Surface Magnetism.

Understanding the effects of phase transition, phase coexistence, and surface magnetism on the longitudinal spin Seebeck effect (LSSE) in a magnetic system is essential to manipulate the spin to charge current conversion efficiency for spincaloritronic applications. We aim to elucidate these effects by performing a comprehensive study of the temperature dependence of the LSSE in biphase iron oxide (BPIO = α-Fe2O3 + Fe3O4) thin films grown on Si (100) and Al2O3 (111) substrates. A combination of a temperature-dependent anomalous Nernst effect (ANE) and electrical resistivity measurements show that the contribution of the ANE from the BPIO layer is negligible in comparison to the intrinsic LSSE in the Si/BPIO/Pt heterostructure, even at room temperature. Below the Verwey transition of the Fe3O4 phase, the total signal across BPIO/Pt is dominated by the LSSE. Noticeable changes in the intrinsic LSSE signal for both Si/BPIO/Pt and Al2O3/BPIO/Pt heterostructures around the Verwey transition of the Fe3O4 phase and the antiferromagnetic (AFM) Morin transition of the α-Fe2O3 phase are observed. The LSSE signal for Si/BPIO/Pt is found to be almost 2 times greater than that for Al2O3/BPIO/Pt; however, an opposite trend is observed for the saturation magnetization. Magnetic force microscopy reveals the higher density of surface magnetic moments of the Si/BPIO film in comparison to the Al2O3/BPIO film, which underscores the dominant role of interfacial magnetism on the LSSE signal and thereby explains the larger LSSE for Si/BPIO/Pt.

Influence of structure phase transition on the thermoelectric properties of Cu2Se1-x Te x liquid-like compounds.

Copper chalcogenide Cu2(Se,Te) compounds are well known as typical p-type thermoelectric materials with a figure of merit (ZT) that can be optimized by the ratio of Se : Te. Here, by using the mechanical alloying and solid-state reaction methods, Te was substituted into Se sites within Cu2Se as the formula Cu2Se1-x Te x (x = 0.1, 0.2, 0.25, and 0.3). The observed changes in structural phase, grain morphologies, and grain size were recorded by XRD and FE-SEM imaging with the appearance of the secondary phase of Cu2Te, with a Te content of x = 0.25. The layered structure morphology was observed more clearly at the high Te content. The electrical conductivity was greatly increased with enriched Te content while the maximum Seebeck coefficient was obtained in the Cu2Se0.75Te0.25 sample. Accordingly, a power factor value of up to 9.84 µW cm-1 K-2 at 773 K was achieved. The appearance of a Cu2Te phase with a Te content of 0.25 created a structural phase transition which results in a ZT value of 1.35 at 773 K in the Cu2Se0.75Te0.25 sample.

High-performance polarization-sensitive photodetectors on two-dimensional ß-InSe.

Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and ß-phase) of InSe, only the crystal lattice of InSe in ß-phase (ß-InSe) belongs to a non-symmetry point group of [Formula: see text], which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of ß-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered ß-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of ß-InSe have been experimentally and theoretically proven, showing that the ß-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify ß-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.

Effects of 1,2-ethanedithiol concentration on performance improvement of quantum-dot LEDs.

We report systematic efficiency variations of green-emitting CdSe@ZnS quantum-dot (QD) LEDs (QLEDs) in response to in situ treatments with 1,2-ethanedithiol (EDT) solutions at various concentrations. The main effect of in situ EDT treatment on a QD layer spin-coated onto a ZnO layer was vacuum-level shift due to dipole moments on the surface of the QD layer and at the interface between QD and ZnO layers. Competing contributions of these dipole moments were responsible for changes in energy level configurations and, accordingly, electron and hole barriers that resulted in discrepancies in electron- and hole-current variations. QLED efficiency was best when treated with an EDT solution of 4 mM, attributable to the largest increase in the hole- to electron current ratio. The maximum luminous yield of the 4 mM EDT-treated QLED was 5.43 cd A-1, which is 10 times higher than that of an untreated device. Furthermore, the luminous yield of this treated device remained as high as 2.56 cd A-1 at a luminance of 500 cd m-2.

Thermoelectric Properties of Hot-Pressed Bi-Doped n-Type Polycrystalline SnSe.

ᅟ: We report on the successful preparation of Bi-doped n-type polycrystalline SnSe by hot-press method. We observed anisotropic transport properties due to the (h00) preferred orientation of grains along the pressing direction. The electrical conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 12.85 and 6.46 S cm-1 at 773 K for SnSe:Bi 8% sample, respectively, while thermal conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 0.81 and 0.60 W m-1 K-1 at 773 K for SnSe:Bi 8% sample, respectively. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition, whose transition temperature increases with Bi concentration. Our work addressed a possibility to dope polycrystalline SnSe by a hot-pressing process, which may be applied to module applications. HIGHLIGHTS: 1. We have successfully achieved Bi-doped n-type polycrystalline SnSe by the hot-press method. 2. We observed anisotropic transport properties due to the [h00] preferred orientation of grains along pressing direction. 3. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition.

Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals.

Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of -2.1 × 1019 cm-3 at 773 K.

New rocaglamide derivatives from Vietnamese Aglaia species.

Phytochemical analysis of the leaves of different Aglaia species collected in Vietnam yielded eight rocaglamide derivatives, which are responsible for the strong insecticidal activity against Spodoptera littoralis, including rocaglamide A (1), rocaglamide 1 (2), rocaglamide W (3), rocaglamide AB (4), rocaglamide J (5), rocaglaol (6), rocaglamide S (7) and the new rocaglamide AY (8). The structures of these compounds were elucidated through extensive 1D and 2D NMR spectroscopy and analysis of their mass spectrometric (ESI-MS) and HRESIMS data.

Putrescine bisamides from Aglaia gigantea.

Phytochemical analysis of the leaves of Aglaia gigantea collected in Vietnam yielded three cinnamoyl putrescine bisamide derivatives, which included the known compound dasyclamide ( 1), as well as two new natural products, gigantamide A ( 2) and grandiamide D ( 3). In this study, the structure of dasyclamide ( 1) was confirmed by X-ray crystallography. The structures of the two new alkaloids, gigantamide A ( 2) and grandiamide D ( 3), were elucidated through extensive 1D and 2D NMR spectroscopy and analysis of their mass spectrometric (ESIMS, HRQTOFMS) data. The absolute configuration of grandiamide D ( 3) was determined via Mosher ester derivatization.