Impact of Green Chitosan Nanoparticles Fabricated from Shrimp Processing Waste as a Source of Nano Nitrogen Fertilizers on the Yield Quantity and Quality of Wheat (Triticum aestivum L.) Cultivars.

Waste from crustaceans has adverse effects on the environment. In this respect, shrimp waste was valorized for producing chitosan nanoparticles as a source for eco-friendly nano-nitrogen fertilizer. The application of nano-nitrogen fertilizers is a valuable alternative approach in agriculture due to its potential for reducing the application of mineral nitrogen fertilizers and increasing yield quality and quantity, thereby helping to reduce the worldwide food shortage. Chitosan nanoparticles were foliar sprayed at three volumes (0, 7, and 14 L/ha) and compared with mineral nitrogen fertilizer (M-N) sprayed at three volumes (0, 120, and 240 kg N/ha) and their combination on two wheat cultivars (Misr-1 and Gemaiza-11) during two consecutive seasons (2019/2020 and 2020/2021) in order to evaluate the agronomic response. The synthesized chitosan nanoparticles displayed characteristic bands of both Nan-N and urea/chitosan from 500-4000 cm-1. They are stable and have a huge surface area of 73.21 m2 g-1. The results revealed significant differences among wheat cultivars, fertilization applications, individual or combined, and their interactions for yield-contributing traits. Foliar application of nano-nitrogen fertilizer at 14 L/ha combined with mineral fertilizer at 240 kg/ha significantly increased total chlorophyll content by 41 and 31% compared to control; concerning plant height, the two cultivars recorded the tallest plants (86.2 and 86.5 cm) compared to control. On the other hand, the heaviest 1000-grain weight (55.8 and 57.4 g) was recorded with treatment of 120 kg Mn-N and 14 L Nan-N/ha compared to the control (47.6 and 45.5 g). The Misr-1 cultivar achieved the highest values for grain yield and nitrogen (1.30 and 1.91 mg/L) and potassium (9.87 and 9.81 mg/L) in the two studied seasons when foliarly sprayed with the combination of 120 kg Mn-N/ha + 14 L Nan-N/ha compared to the Gemaiza-11 cultivar. It can be concluded that Misr-1 exhibited higher levels of total chlorophyll content, spike length, 100-grain weight, grain yield in kg/ha, and nitrogen and potassium. However, Gemaiza-11 displayed higher biomass and straw yield values, plant height, and sodium concentration values. It could be economically recommended to use the application of 120 kg Mn-N/ha + 14 L Nan-N/ha on the Misr-1 cultivar to achieve the highest crop yield.

Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions.

InGaN-based nanowires (NWs) have been investigated as efficient photoelectrochemical (PEC) water splitting devices. In this work, the InGaN/GaN NWs were grown by molecular beam epitaxy (MBE) having InGaN segments on top of GaN seeds. Three axial heterojunction structures were constructed with different doping types and levels, namely n-InGaN/n-GaN NWs, undoped (u)-InGaN/p-GaN NWs, and p-InGaN/p-GaN NWs. With the carrier concentrations estimated by Mott-Schottky measurements, a PC1D simulation further confirmed the band structures of the three heterojunctions. The u-InGaN/p-GaN and p-InGaN/p-GaN NWs exhibited optimized stability in pH 0 electrolytes for over 10 h with a photocurrent density of about -4.0 and -9.4 mA/cm2, respectively. However, the hydrogen and oxygen evolution rates of the Pt-treated u-InGaN/p-GaN NWs exhibited a less favorable stoichiometric ratio. On the other hand, the Pt-decorated p-InGaN/p-GaN NWs showed the best PEC performance, generating approximately 1000 µmol/cm2 hydrogen and 550 µmol/cm2 oxygen in 10 h. The band-engineered p-InGaN/p-GaN axial NWs-heterojunction demonstrated a great potential for highly efficient and durable photocathodes.

Flexible InGaN nanowire membranes for enhanced solar water splitting.

III-Nitride nanowires (NWs) have recently emerged as potential photoelectrodes for efficient solar hydrogen generation. While InGaN NWs epitaxy over silicon is required for high crystalline quality and economic production, it leads to the formation of the notorious silicon nitride insulating interface as well as low electrical conductivity which both impede excess charge carrier dynamics and overall device performance. We tackle this issue by developing, for the first time, a substrate-free InGaN NWs membrane photoanodes, through liftoff and transfer techniques, where excess charge carriers are efficiently extracted from the InGaN NWs through a proper ohmic contact formed with a high electrical conductivity metal stack membrane. As a result, compared to conventional InGaN NWs on silicon, the fabricated free-standing flexible membranes showed a 10-fold increase in the generated photocurrent as well as a 0.8 V cathodic shift in the onset potential. Through electrochemical impedance spectroscopy, accompanied with TEM-based analysis, we further demonstrated the detailed enhancement within excess charge carrier dynamics of the photoanode membranes. This novel configuration in photoelectrodes demonstrates a novel pathway for enhancing the performance of III-nitrides photoelectrodes to accelerate their commercialization for solar water splitting.

Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting.

Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency. In this work, we address the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol). The surface-treated photocathode showed an enhanced photocurrent density of -31 mA/cm2 at -0.2 V versus RHE with an incident photon-to-current conversion efficiency of 18.3%, whereas untreated nanowires yielded only 8.1% efficiency. Furthermore, the surface passivation provides enhanced photoelectrochemical stability as surface-treated nanowires retained ∼80% of their initial photocurrent value and produced 8000 µmol of gas molecules over 55 h at acidic conditions (pH ∼ 0), whereas the untreated nanowires demonstrated only <4 h of photoelectrochemical stability. These findings shed new light on the importance of surface passivation of nanostructured photoelectrodes for photoelectrochemical applications.

Optically pumped GaN vertical cavity surface emitting laser with high index-contrast nanoporous distributed Bragg reflector.

Laser operation of a GaN vertical cavity surface emitting laser (VCSEL) is demonstrated under optical pumping with a nanoporous distributed Bragg reflector (DBR). High reflectivity, approaching 100%, is obtained due to the high index-contrast of the nanoporous DBR. The VCSEL system exhibits low threshold power density due to the formation of high Q-factor cavity, which shows the potential of nanoporous medium for optical devices.

Response of Canola productivity to integration between mineral nitrogen with yeast extract under poor fertility sandy soil condition.

Canola is one of the important oil crops and is considered the most promising oil source and adapts to reclaimed soil conditions. The current study aimed to evaluate the influence of yeast extract (YE) integrated with nitrogen (N) rates and treatments were arranged as follows: Control (without F0), 95 kg N ha-1 (F1), 120 kg N ha-1 (F2), 142 kg N ha-1 (F3), 95 kg N ha-1 + YE (F4), 120 kg N ha-1 + YE (F5) and 142 kg N ha-1 + YE (F6) on physico-chemical properties, yield and its components for three Canola genotypes i.e. AD201 (G1), Topaz and SemuDNK 234/84 under the sandy soil. In this work, Results reveal that increasing rates of Nitrogen fertilization from 95 kg N ha-1 to 142 kg N ha-1 have a great effect on physicochemical properties yield and its components. The result proved that 142 kg N ha-1 with yeast treatment was the best treatment for three Canola genotypes. Also, the result showed that seed yield was positively correlated with Chl. a/b ratio, plant height, number of branches/plant, number of pods/plant, and number of seeds/pod, and a strong negative correlation was detected between seed oil percentage when the amount of nitrogen fertilization applied without or with yeast extract is increased.

A Hierarchical 3D TiO2 /Ni Nanostructure as an Efficient Hole-Extraction and Protection Layer for GaAs Photoanodes.

Photoelectrochemical (PEC) water splitting is a promising clean route to hydrogen fuel. The best-performing materials (III/V semiconductors) require surface passivation, as they are liable to corrosion, and a surface co-catalyst to facilitate water splitting. At present, optimal design combining photoelectrodes with oxygen evolution catalysts remains a significant materials challenge. Here, we demonstrate that nickel-coated amorphous three-dimensional (3D) TiO2 core-shell nanorods on a TiO2 thin film function as an efficient hole-extraction layer and serve as a protection layer for the GaAs photoanode. Transient-absorption spectroscopy (TAS) demonstrated the role of nickel-coated (3D) TiO2 core-shell nanorods in prolonging photogenerated charge lifetimes in GaAs, resulting in a higher catalytic activity. This strategy may open the potential of utilizing this low-cost (3D) nanostructured catalyst for decorating narrow-band-gap semiconductor photoanodes for PEC water splitting devices.

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.

p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission.

We report on the fabrication of novel InGaN nanowires (NWs) with improved crystalline quality and high radiative efficiency for applications as nanoscale visible light emitters. Pristine InGaN NWs grown under a uniform In/Ga molar flow ratio (UIF) exhibited multi-peak white-like emission and a high density of dislocation-like defects. A phase separation and broad emission with non-uniform luminescent clusters were also observed for a single UIF NW investigated by spatially resolved cathodoluminescence. Hence, we proposed a simple approach based on engineering the axial In content by increasing the In/Ga molar flow ratio at the end of NW growth. This new approach yielded samples with a high luminescence intensity, a narrow emission spectrum, and enhanced crystalline quality. Using time-resolved photoluminescence spectroscopy, the UIF NWs exhibited a long radiative recombination time (τr) and low internal quantum efficiency (IQE) due to strong exciton localization and carrier trapping in defect states. In contrast, NWs with engineered In content demonstrated three times higher IQE and a much shorter τr due to mitigated In fluctuation and improved crystal quality.

Fabrication of vertical light emitting diode based on thermal deformation of nanoporous GaN and removable mechanical supporter.

A GaN vertical light emitting diode (LED) based on the novel lift-off method was demonstrated by high temperature regrowth over nanoporous (NP) GaN template formed by electrochemical (EC) etching. A two-step EC etching process was employed on a SiO2 patterned GaN surface to fabricate a nanoporous template with a controlled porosity profile, which enabled better structural stability than a single NP GaN. During the regrowth of LED structures, the high porosity GaN layer produced large coalesced voids due to the thermal deformation of nanopores. LED layers were then separated from the sapphire substrate and transferred to a Mo substrate by the removal of the SiO2 mechanical supporters that held the LED structure to suppress cracks and damage during the process. The vertical LEDs fabricated using this technique showed improved optical power emission as well as low series resistance.