Modifying the electronic and magnetic properties of the scandium nitride semiconductor monolayer via vacancies and doping.

In this work, the effects of vacancies and doping on the electronic and magnetic properties of the stable scandium nitride (ScN) monolayer are investigated using first-principles calculations. The pristine monolayer is a two-dimensional (2D) indirect-gap semiconductor material with an energy gap of 1.59(2.84) eV as calculated using the GGA-PBE (HSE06) functional. The projected density of states, charge distribution, and electron localization function assert its ionic character generated by the charge transfer from the Sc atoms to the N atoms. The monolayer is magnetized by a single Sc vacancy with a total magnetic moment of 3.00µB, while a single N vacancy causes a weaker magnetization with a total magnetic moment of 0.52µB. In both cases, the magnetism originates mainly from the atoms closest to the defect site. Significant magnetization is also reached by doping with acceptor impurities. Specifically, a total magnetic moment of 2.00µB is obtained by doping with alkali metals (Li and Na) in the Sc sublattice and with B in the N sublattice. Doping with alkaline earth metals (Be and Mg) in the Sc sublattice and with C in the N sublattice induces a value of 1.00µB. In these cases, either magnetic semiconducting or half-metallicity characteristics arise in the ScN monolayer, making it a prospective 2D spintronic material. In contrast, no magnetism is induced by doping with donor impurities (O and F atoms) in the N sublattice. An O impurity metallizes the monolayer; meanwhile, F doping leads to a large band-gap reduction of the order of 82%, widening the working regime of the monolayer in optoelectronic devices. The results presented herein may introduce efficient methods to functionalize the ScN monolayer for optoelectronic and spintronic applications.

Towards understanding the first half-ALD cycle of Ag growth: adsorption and dissociation of silver(I) acetamidinates on the Ag(110) surface.

The advancement of atomic layer deposition (ALD) techniques for the controlled growth of transition metal thin films is constantly growing due to the design and synthesis of novel organometallic (OM) precursors capable of facilitating precise deposition and clean film growth. In this context, acetamidinates have emerged as a highly promising family of OM precursors due to their exceptional attributes, including outstanding stability, favorable volatility, and reactivity at low evaporation and deposition temperatures. These unique properties make them a sought-after candidate for enabling ALD processes. Here we conducted an atomic-scale study to get an in-depth understanding of the first ALD partial reaction, which involves the adsorption and dissociation process of the silver acetamidinate on the Ag(110) surface. Our research sheds light on the multistep adsorption and breaking mechanism of the novel silver(I)-N,N'-dimethylacetamidinate precursor employed as the silver source. Since the difference in energy between the monomer and dimer phases of the precursor is only 1.92 eV, we have explored the adsorption states of both phases. The monomer adsorbs on the surface by occupying hollow (H) sites; after that, it dissociates and loses its ligand, adopting a perpendicular geometry via the formation of new Ag-N bonds with the pair of N atoms at the top sites of the surface. On the other hand, the dimer adsorbs on long-bridge sites (LB) with the pair of N atoms occupying top sites with the silver atoms from the surface. Next, the dimer loses a pair of N-Ag bonds on each ligand, reaching a more stable state of partial cleavage with a relative energy of -0.38 eV. After overcoming an energy barrier of 0.41 eV, the dimer loses the remaining pair of N-Ag bonds, and the silver atoms diffuse towards H sites. Finally, the ligands diffuse toward the adjacent channel in the [100] direction of the surface. A charge distribution analysis of the adsorption stages shows the evolution of the silver atoms from precursor to the metallic state.

Understanding the role of carboxylic acid surfactants in the growth inhibition effect during area-selective atomic layer deposition: the case of ZnO growth on Cu and Cu2O.

Herein, we report a detailed adsorption process of acetic acid (AA) as a model for the head group of carboxylic acid self-assembled monolayers on Cu and Cu2O (111) surfaces and the effect of diethyl zinc (DEZ) on its adsorption geometry on Cu2O (111) using quantum chemical calculations. The most stable adsorption configurations were obtained considering electrostatic potential compatibility from the molecule and surface. Overall, the adsorption behavior revealed bidentate binding as the most stable configuration. Weak van der Waals interactions are key in AA adsorption on Cu (111), while in Cu2O (111), coordination and hydrogen bonds dominated the interaction. AA adsorption geometry on Cu2O revealed that DEZ has no significative impact on the carbonyl-chemisorbed AA and bidentate adsorption modes. These results highlight the significance of the different adsorption modes for achieving area-selective deposition using atomic layer deposition and soft removal SAM molecules.

Antiferromagnetism in GaS monolayer doped with TM-TM atom pairs (TM = V, Cr, Mn, and Fe).

In this work, structural modification at Ga sites of the gallium sulfide (GaS) monolayer is explored to create new two-dimensional (2D) materials towards spintronic applications. GaS monolayer is a non-magnetic indirect-gap semiconductor material with an energy gap of 2.38 (3.27) eV as calculated using the PBE(HSE06) functional. Half-metallicity is induced in this 2D material by creating a single Ga vacancy, where S atoms around the defect site produce mainly the magnetic properties with a total magnetic moment of 1.00µB. In contrast, the non-magnetic nature is preserved under the effects of a pair of Ga vacancies, which metallize the monolayer. V, Mn, and Fe doping leads to the emergence of the diluted magnetic semiconductor nature, while doping with Cr creates a new 2D half-metallic material from the GaS monolayer. In these cases, total magnetic moments between 2.00 and 5.00µB are obtained and the 3d orbital of transition metal (TM) impurities mainly induces the system magnetism. In addition, the effects of doping with a pair of TM (pTM) atoms are also investigated, in which the antiferromagnetism is found to be stable rather than the ferromagnetism to follow the Pauli exclusion principle. Significant magnetization of the GaS monolayer is also achieved with zero total magnetic moment because of the structural mirror-symmetry. pV-, pMn-, and pFe-doped systems are antiferromagnetic semiconductor materials with energy gaps of 1.06, 1.90, and 1.84 eV, respectively. Meanwhile, the monolayer is metallized by doping with a pCr pair. The results presented herein indicate that the defective and doped GaS monolayers are prospective 2D candidates for spintronic applications - which are hindered for the pristine GaS monolayer because of the absence of intrinsic magnetism.

A systematic investigation of chromium and vanadium impurities in a Janus Ga2SO monolayer towards spintronic applications.

Transition metals (TMs) have been employed as efficient sources of magnetism in non-magnetic two-dimensional (2D) materials. In this work, doping with chromium (Cr) and vanadium (V) is proposed to induce feature-rich electronic and magnetic properties in a Janus Ga2SO monolayer towards spintronic applications. The Ga2SO monolayer is a 2D semiconductor material with an energy gap of 1.30 (2.12) eV obtained from PBE(HSE06)-based calculations. Considering the structural asymmetry, different vacancy and doping sites are considered. A single Ga vacancy and pair of Ga vacancies magnetize the monolayer with total magnetic moments between 0.69 and 3.13µB, where the half-metallic nature is induced by the single Ga1 vacancy (that bound to the S atom). In these cases, the magnetism is originated mainly from S and O atoms closest to the vacancy sites. Depending on the doping site, either half-metallicity or diluted magnetic semiconductor natures are obtained by doping with Cr and V atoms with total magnetic moments of 3.00 and 2.00µB, respectively. Herein, 3d TM impurities produce mainly the system magnetism. When substituting a pair of Ga atoms, TM atoms exhibit the antiparallel spin alignment to follow the Pauli exclusion principle, retaining the novel electronic characteristics induced by a single TM dopant. Except for the case of doping with a pair of V atoms, total magnetic moments of 2.00 and 1.00µB are obtained by doping with a pair or Cr atoms and Cr/V co-doping, respectively. The non-zero magnetic moment is derived from the different interactions of each TM atom with its neighboring atoms, which will also be studied by Bader charge analysis. Our results introduce new promising 2D spintronic candidates, which are made by structural modifications at Ga sites of a non-magnetic Janus Ga2SO monolayer.

Correction: Novel germanene-arsenene and germanene-antimonene lateral heterostructures: interline-dependent electronic and magnetic properties.

Correction for 'Novel germanene-arsenene and germanene-antimonene lateral heterostructures: interline-dependent electronic and magnetic properties' by Chu Viet Ha et al., Phys. Chem. Chem. Phys., 2023, 25, 14502-14510, https://doi.org/10.1039/d3cp00828b.

Half-metallic and magnetic semiconductor behavior in CdO monolayer induced by acceptor impurities.

In this work, a doping approach is explored as a possible method to induce novel features in the CdO monolayer for spintronic applications. Monolayer CdO is a two-dimensional (2D) non-magnetic semiconductor material with a band gap of 0.82 eV. In monolayer CdO, a single Cd vacancy leads to magnetization of the monolayer with a total magnetic moment of -2µB, whereas its non-magnetic nature is preserved upon creating a single O vacancy. Doping the Cd sublattice with Cu-Ag and Au induces half-metallic character with a total magnetic moment of -1 and 1µB, respectively. Dopants and their neighboring O atoms produce mainly magnetic properties. By contrast, doping with N, P, and As at the O sublattice leads to the emergence of magnetic semiconductor behavior with a total magnetic moment of 1µB. Herein, magnetism originates mainly from the spin-asymmetric charge distribution in the outermost orbitals of the dopants. Bader charge analysis and charge density difference calculations indicate charge transfer from Cu, Ag and Au dopants to the host monolayer, whereas the N, P and As dopants exhibit important charge gains. These results suggest that doping with acceptor impurities is an efficient approach to functionalize the CdO monolayer to generate spin currents in spintronic devices.

Doping-mediated electronic and magnetic properties of graphene-like ionic NaX (X = F and Cl) monolayers.

In this work, the stability, and electronic and magnetic properties of pristine and doped graphene-like ionic NaX (X = F and Cl) monolayers are explored using first-principles calculations. The good stability of NaF and NaCl monolayers is confirmed by phonon dispersion curves and ab initio molecular dynamics simulations. Electronic structure calculations show their insulator nature with large indirect band gaps of 5.43 (7.26) and 5.06 (6.32) eV as calculated with the PBE (HSE06) functional, respectively. In addition, their ionic character is also demonstrated. Furthermore, a doping approach is explored to functionalize NaX monolayers for spintronic applications. For such a goal, IIA- and VIA-group atoms are selected as dopants due to their dissimilar valence electronic configuration as compared with the host atoms. The results indicate the emergence of magnetic semiconductor nature with a total magnetic moment of 1µB. Herein, magnetic properties are produced mainly by the dopant atoms, which induce new middle-gap energy states around the Fermi level. Finally, the effects of codoping the NaF monolayer with Ca and O and NaCl with Ba and O are also examined. Adjacent Ca-O and Ba-O pairs preserve the non-magnetic nature. Further separating dopants leads to the emergence of magnetic semiconductor behavior, with lower magnetization than separate doping. This work introduces new ionic 2D materials for optoelectronic and spintronic applications, contributing to the research effort to find out new 2D multifunctional materials.

Novel germanene-arsenene and germanene-antimonene lateral heterostructures: interline-dependent electronic and magnetic properties.

Seamlessly stitching two-dimensional (2D) materials may lead to the emergence of novel properties triggered by the interactions at the interface. In this work, a series of 2D lateral heterostructures (LHSs), namely germanene-arsenene (Gem-As8-m) and germanene-antimonene (Gem-Sb8-m), are investigated using first-principles calculations. The results demonstrate a strong interline-dependence of the electronic and magnetic properties. Specifically, the LHS formation along an armchair line preserves the non-magnetic nature of the original materials. However, this is an efficient approach to open the electronic band gap of the germanene monolayer, where band gaps as large as 0.74 and 0.76 eV are induced for Ge2-As6 and Ge2-Sb6 LHSs, respectively. Meanwhile, magnetism may appear in the zigzag-LHSs depending on the chemical composition (m = 3, 4, 5, and 6 for germanene-arsenene and m = 2, 3, 4, 5, and 6 for germanene-antimonene), where total magnetic moments between 0.13 and 0.50 µB are obtained. Herein, magnetic properties are produced mainly by the spin-up state of Ge atoms at the interface, where a small contribution comes from As(Sb) atoms. Spin-resolved band structures show a multivalley profile in both the valence band and the conduction band with a topological insulator-like behavior, where the interface states are derived mainly from the interface Ge-pz state. The results introduce new 2D lateral heterostructures with novel electronic and magnetic properties to allow new functionalities, which could be further explored for optoelectronic and spintronic applications.

Transition metal (Ti, Cu, Zn, Pt) single-atom modified graphene/AS2 (A = Mo, W) van der Waals heterostructures for removing airborne pollutants.

Air pollution is a worldwide issue that affects human health and the environment. The scientific community tries to control it through different approaches, from experimental to theoretical assessments. Here, we perform DFT calculations to describe CO2, NO2, and SO2 detection on a single-atom (Ti, Cu, Zn, Pt) graphene supported on 2D molybdenum disulfide (MoS2) and tungsten disulfide (WS2). Transition metal single atoms on graphene improve the monolayer reactivity by generating an effective way to remove airborne pollutants. Results indicate that SO2 and NO2 chemically adsorb on all tested transition metals, whereas CO2 stands on top of the incorporated atoms through van der Waals interactions. Since strong Ti-O interactions appear, the Ti single-atom graphene/MoS2(WS2) systems efficiently remove CO2 from the environment. Compared to pristine graphene, our proposed heterostructures improve the SO2, NO2, and CO2 adsorption energies. The heterostructures' electronic properties change once the molecules interact with the transition metals, generating sensible and selective pollutant molecule detection and removal.

Introducing the 1H-Na2S monolayer as a new direct gap semiconductor with feature-rich electronic and magnetic properties.

In this work, a new direct gap semiconductor, the Na2S monolayer in the 1H-phase, with good stability and ionic character, has been explored using first-principles calculations. A Γ-Γ energy gap of 0.80 (1.48) eV is obtained using the standard PBE (hybrid HSE06) functional. The studied two-dimensional (2D) material possesses weak dynamical stability under compressive strain due to the sensitivity of the ZA mode. Meanwhile tensile strain has much more positive effects, where the stability is well retained up to a strain strength of 7%. Once external strain is applied, the band gap increases due to switching from lattice compression to lattice tension. Further exploration of defect engineering indicates that significant magnetism with magnetic moment of ±1 is induced by a single Na vacancy. The magnetic properties are mainly produced by S atoms around the defect site. In contrast, the paramagnetic nature is preserved with a single S vacancy. However, large energy gap reduction of up to 93.75% can be achieved with a defect concentration of 25%. This research introduces a new prospective 2D material similar to transition metal dichalcogenides for optoelectronic and spintronic applications, contributing to the continued efforts to develop novel multifunctional low-dimensional materials.

Ferromagnetic half-metallicity of the cubic NaMgO3 perovskite: from bulk to (001) surfaces.

Exploration of new half-metallic materials for spintronic applications has drawn great attention from researchers. In this work, we investigate the structural, electronic, and magnetic properties of the NaMgO3 perovskite in the bulk and (001) surface conformations. The results show the half-metallic nature of bulk NaMgO3 generated by insulator spin-up channels with a large band gap of 6.08 eV and metallic spin-down channels. A total magnetic moment of 3 (µB) is obtained, which is produced mainly by O atoms with a local magnetic moment of 0.94 (µB). Once the bulk is cleaved along the (001) direction, atomic relaxation takes place to reach an equilibrium, where all constituent atoms exhibit an inward movement. Interestingly, the half-metallicity is retained from the bulk to the (001) surface conformation. The effects of slab termination and thickness on the surface energy, stability, band edges, spin-up energy gaps, and magnetic anisotropy will be also analyzed in detail. The results presented herein introduce the NaMgO3 perovskite as a promising half-metallic material to generate spin current in spintronic devices.

A first-principles study of the atomic layer deposition of ZnO on carboxyl functionalized carbon nanotubes: the role of water molecules.

The formation of heterostructures that combine a large surface area with high surface activity has attracted the attention of the scientific community due to the unique properties and applications of these heterostructures. In this work, we describe - at the atomic level - the full reaction mechanisms involved in the atomic layer deposition of a hybrid ZnO/CNT inorganic structure. First, the pristine CNTs are chemically activated with a carboxylic acid, a process unique to carbon materials. Diethylzinc (DEZ) and water are used as gas-phase precursors to form ZnO. Our findings show that DEZ is physically adsorbed on the CNTs during the exposure of the first precursor. The ligand-exchange to generate chemisorbed ethyl zinc on the O side of the COOH group needs to overcome an energy barrier of 0.06 eV. This is a very small energy if compared to the values (0.5-0.6 eV) obtained in previous studies for OH functionalized surfaces. The height of the barrier is associated with the C[double bond, length as m-dash]O side, which mediates the H proton's exchange from the OH group to the C2H5 ligand. Furthermore, upon exposure to the oxidizing agent (H2O), ethyl zinc exchanges its last ligand as ethane, and it accepts a hydroxyl group through a self-limiting reaction with an energy barrier of 0.88 eV. Notice that the energy barrier of the second ligand-exchange is larger than of the first. We have also analyzed the effect in the saturation of the second precursor: as the quantity of water molecules increases, the long-range interactions tend to repel them. However, the energy barrier of the second ligand-exchange decreases from 1.53 eV to 0.88 eV for one and two water molecules, showing a clear dependence on the oxidizing agent. Non-covalent interactions are used as a tool to visualize the driving forces that take place during each partial reaction in real space. Our study points out the importance of using the right functionalization agent to achieve a controlled and conformal ALD growth at the initial steps of the formation of hybrid ZnO/CNT structures, as well as the role played by the oxidizing agent to lower the energy barrier on the second ALD step.

Understanding the first half-ALD cycle of the ZnO growth on hydroxyl functionalized carbon nanotubes.

We report the adsorption of diethylzinc on hydroxyl functionalized carbon nanotubes. This study intends to understand, at the atomic level, the initial stages of ZnO formation by atomic layer deposition. Our study begins with the molecule physisorbed on the nanotube (initial state of the reaction). The final state of this reaction is when the H atom of the hydroxyl group is abstracted and migrates to one ethyl group of diethylzinc. The oxygen atom relaxes towards the nanotube and forms a strong bond with a carbon atom, while the remaining part of the molecule forms a bond with the H atom and physisorbs on top of the ZnO unit. The probability for this process to happen is very high since the energy to desorb the diethylzinc molecule is higher than the energy needed to break down the O-H bond. Non-covalent interactions and charge density distributions are plotted to confirm the break-down, formation of bonds, and repulsion during the reaction pathway.

Structural transition induced by compression and stretching of puckered arsenene nanotubes.

The stretching and compression effects on puckered arsenene nanotubes (AsNTs) are investigated by using density functional calculations. The atomic arrangement determines the nanotube properties and relative stability; therefore, zigzag, chiral, and armchair present different properties. Since the AsNT properties depend on the diameter, three cases are considered: (a) (0, 9) and (9, 0), (b) (0, 14) and (14, 0), and (c) (0, 19) and (19, 0) NTs. For all calculated parameters of the smallest NTs, it is found that the armchair (0, 9) nanotube is always more stable than the zigzag (9, 0) nanotube. On the other hand, for the two largest NTs, a structural transition from armchair to zigzag is found upon stretching. Phase transitions are of great interest, in part because they result in changes of the properties of the material under study, changes that can be used in many technologies. To our knowledge, this is the first time that a structural transition in a puckered nanotube has been predicted. Our results show that the electronic band gap of the AsNTs can be modulated by increasing or decreasing the axial lattice parameter. It is also found that semiconductor NTs are more stable than metallic NTs.

CRISPR is knocking on barn door.

Genome modification at specific loci in livestock species was only achievable by performing homologous recombination in somatic cells followed by somatic cell nuclear transfer. The difficulty and inefficiency of this method have slowed down the multiple applications of genome modification in farm animals. The discovery of site-specific endonucleases has provided a different and more direct route for targeted mutagenesis, as these enzymes allow the ablation (KO) or insertion (KI) of specific genomic sequences on a single step, directly applied to zygotes. Clustered regularly interspaced short palindromic repeats (CRISPR), the last site-specific endonuclease to be developed, is a RNA-guided endonuclease, easy to engineer and direct to a given target site. This technology has been successfully applied to rabbits, swine, goats, sheep and cattle, situating genome editing in livestock species at an attainable distance, thereby empowering scientist to develop a myriad of applications. Genetically modified livestock animals can be used as biomodels to study human or livestock physiology and disease, as bioreactors to produce complex proteins, or as organ donors for transplantation. Specifically on livestock production, genome editing in farm animals may serve to improve productive genetic traits, to improve various animal products, to confer resistance to diseases or to minimize the environmental impact on farming. In this review, we provide an overview of the current methods for site-specific genome modification in livestock species, discuss potential and already developed applications of genome edition in farm animals and debate about the possibilities for approval of products derived from gene-edited animals for human consumption.

n/p-Doping in a buckled honeycomb InAs monolayer using IVA-group impurities.

In this work, the effects of n/p-doping on the electronic and magnetic properties of a low-buckled honeycomb InAs monolayer are investigated using first-principles calculations. Herein, IVA-group atoms (C, Si, Ge, Sn, and Pb) are selected as impurities for n-doping in the In sublattice and p-doping in the As sublattice. The pristine monolayer is a semiconductor with a band gap of 0.77(1.41) as determined using the PBE(HSE06) functional. A single In vacancy induces magnetic semiconductor behavior with a large total magnetic moment of 2.98 µB, while a single As vacancy preserves the non-magnetic nature. The monolayer is not magnetized by n-doping with C and Si atoms due to the strong ionic interactions, while the magnetic semiconducting nature is induced with Ge, Sn, and Pb impurities. In these cases, magnetic properties are produced by IVA-group impurities and their neighboring As atoms. Furthermore, either a magnetic semiconducting or half-metallic nature is obtained via p-doping, whereas magnetism originates mainly from C, Si, Ge, and Sn dopants, and the As atoms closest to a Pb dopant. Further investigation indicates that the magnetization becomes stronger upon increasing the doping level, with a total magnetic moment of up to 3.92 µB with 25% Sn impurity. In addition, the thermal stability of the doped systems at room temperature is also confirmed by ab initio molecular-dynamics (AIMD) simulations. The results introduce IVA-group-assisted functionalization as an efficient way to make prospective 2D InAs-based spintronic materials.

A systematic study of TMO n (TM = V, Cr, Mn, and Fe; n = 3 and 6) clusters embedded in a PtS2 monolayer.

Doping-based magnetism engineering is an effective approach to synthesize new multifunctional two-dimensional (2D) materials from their non-magnetic counterparts. In this work, doping with TMO n clusters (TM = V, Cr, Mn, and Fe; n = 3 and 6) is proposed to induce feature-rich electronic and magnetic properties in a PtS2 monolayer. The pristine monolayer is a non-magnetic semiconductor with an indirect energy gap of 1.81 (2.67) eV as obtained from PBE(HSE06)-based calculations. PtS3-type multivacancies magnetize significantly the monolayer, inducing the emergence of half-metallicity. In this case, a total magnetic moment of 1.90 µB is obtained and magnetic properties are produced mainly by atoms around the vacancy sites. Meanwhile, the PtS2 monolayer is metallized by creating PtS6-type multivacancies without magnetization. Depending on the type of TMO n cluster, either a feature-rich diluted magnetic semiconductor or half-metallic nature is induced, which is regulated mainly by the incorporated clusters. Except for the FeO6 cluster, TM atoms and O atoms exhibit an antiparallel spin orientation, resulting in total magnetic moments between 1.00 and 4.00 µB. Meanwhile, the parallel spin ordering gives a large total magnetic moment of 5.99 µB for the FeO6-doped monolayer. Furthermore, Bader charge analysis indicates that all the clusters attract charge from the host monolayer that is mainly due to the electronegative O atoms. Our results may introduce cluster doping as an efficient way to create new spintronic 2D materials from a non-magnetic PtS2 monolayer.

Vacancy-and doping-mediated electronic and magnetic properties of PtSSe monolayer towards optoelectronic and spintronic applications.

Developing new multifunctional two-dimensional (2D) materials with two or more functions has been one of the main tasks of materials scientists. In this work, defect engineering is explored to functionalize PtSSe monolayer with feature-rich electronic and magnetic properties. Pristine monolayer is a non-magnetic semiconductor 2D material with a band gap of 1.52(2.31) eV obtained from PBE(HSE06)-based calculations. Upon creating single Pt vacancy, the half-metallic property is induced in PtSSe monolayer with a total magnetic moment of 4.00 µ B. Herein, magnetism is originated mainly from S and Se atoms around the defect site. In contrast, single S and Se vacancies preserve the non-magnetic nature. However, the band gap suffers of considerable reduction of the order of 67.11% and 48.68%, respectively. The half-metallicity emerges also upon doping with alkali metals (Li and Na) with total magnetic moment of 1.00 µ B, while alkaline earth impurities (Be and Mg) make new diluted magnetic semiconductor materials from PtSSe monolayer with total magnetic moment of 2.00 µ B. In these cases, magnetic properties are produced mainly by Se atoms closest to the doping site. In addition, doping with P and As atoms at chalcogen sites is also investigated. Except for the half-metallic AsSe system (As doping at Se site), the diluted magnetic semiconductor behavior is obtained in the remaining cases. Spin density results indicate key role of the VA-group impurities in magnetizing PtSSe monolayer. In these cases, total magnetic moments between 0.99 and 1.00 µ B are obtained. Further Bader charge analysis implies the charge loser role of all impurities that transfer charge to the host monolayer. Results presented in this work may suggest promises of the defected and doped Janus PtSSe structures for optoelectronic and spintronic applications.

Controlling the electronic and magnetic properties of the GeAs monolayer by generating Ge vacancies and doping with transition-metal atoms.

Controlling the electronic and magnetic properties of two-dimensional (2D) materials is a key step to make new multifunctional candidates for practical applications. In this work, defects and doping with transition metals (TMs = V, Cr, Mn, and Fe) at Ge sublattices are proposed in order to develop novel features in the hexagonal germanium arsenide (GeAs) monolayer. The pristine GeAs monolayer is a non-magnetic indirect gap semiconductor with an energy gap of 1.20(1.82) eV as provided by PBE(HSE06)-based calculations. A single Ge vacancy metallizes the monolayer, preserving its non-magnetic nature. In contrast, significant magnetization with a total magnetic moment of 1.96 µ B is achieved by a pair of Ge vacancies. Herein, the computed band structures assert the half-metallic behavior of the defective system. Similarly, half-metallicity is also obtained by V, Mn, and Fe doping. Meanwhile, the Cr-doped GeAs monolayer is classified as a diluted magnetic semiconductor 2D system. In these cases, magnetic properties are produced mainly by TM-3d electrons with total magnetic moments between 2.00 and 4.00 µ B. Further, the effects of substituting a pair of Ge atoms with a pair of TM atoms (pTMGe systems) are also investigated. Results indicate the ferromagnetic half-metallicity of the pVGe system, meanwhile antiferromagnetic ordering is stable in the remaining cases. In all cases, TM impurities transfer charge to the host GeAs monolayer since they are surrounded by As atoms, which are more electronegative than dopant atoms. Results presented herein may introduce new 2D systems - made from the non-magnetic GeAs monolayer - for spintronic applications with suitable electronic and magnetic features controlled mainly by transition metals.