Diamond with Unexpected Multi-Scale Pores.

Following the diverse structural characteristics and primary usage, diamond products include nano-polycrystalline diamond (NPD), micron-polycrystalline diamond (MPD), diamond film, porous diamond, and diamond wire drawing die. Among them, porous diamond possesses a distinctive combination of flexible surface functionality and a remarkably high surface area-to-volume ratio (SA/V) compared to traditional bulk materials, which contributes to cross-cutting applications in catalysis, adsorption, and electrochemistry while retaining the superior traits of diamond, particularly its exceptional chemical inertia. To avoid etching or microwave plasma chemical vapor deposition (MPCVD) techniques, this study proposes a high-temperature and high-pressure method based on a soluble skeleton (HPHT-ss) as an efficient and inexpensive approach for synthesizing millimeter-level porous diamonds. Interestingly, porous diamond synthesized by HPHT-ss exhibits multiscale pores distributed as macropores (average 75 µm) and mesopores (average 19 nm), which gives it a unique feature compared with other methods. Pertinent temperature-pressure conditions, HPHT-ss synthesis, and the formation mechanism of porous diamonds are also thoroughly discussed.

Rediscovering the intrinsic mechanical properties of bulk nanocrystalline indium arsenide.

Is the inverse Hall-Petch relation in ceramic systems the same as that in metal systems? The premise to explore this subject is the synthesis of a dense bulk nanocrystalline material with clean grain boundaries. By using the reciprocating pressure-induced phase transition (RPPT) technique, compact bulk nanocrystalline indium arsenide (InAs) has been synthesized from a single crystal in a single step, while its grain size is controlled by thermal annealing. The influence of macroscopic stress or surface states on the mechanical characterization has been successfully excluded by combining first-principles calculations and experiments. Unexpectedly, nanoindentation tests show a potential inverse Hall-Petch relation in the bulk InAs with a critical grain size (Dcri) of 35.93 nm in the experimental scope. Further molecular dynamics investigation confirms the existence of the inverse Hall-Petch relation in the bulk nanocrystalline InAs with Dcri = 20.14 nm for the defective polycrystalline structure, with its Dcri significantly affected by the intragranular-defect density. The experimental and theoretical conclusions comprehensively reveal the great potential of RPPT in the synthesis and characterization of compact bulk nanocrystalline materials, which provides a novel window to rediscover their intrinsic mechanical properties, for instance, the inverse Hall-Petch relation of bulk nanocrystalline InAs.