Integrated autocorrelator based on superconducting nanowires.

We demonstrate an integrated autocorrelator based on two superconducting single-photon detectors patterned on top of a GaAs ridge waveguide. This device enables the on-chip measurement of the second-order intensity correlation function g(2)(τ). A polarization-independent device quantum efficiency in the 1% range is reported, with a timing jitter of 88 ps at 1300 nm. g(2)(τ) measurements of continuous-wave and pulsed laser excitations are demonstrated with no measurable crosstalk within our measurement accuracy.

Ultrasensitive N-photon interferometric autocorrelator.

We demonstrate a novel method to measure Nth-order (N=1,2,3,4) interferometric autocorrelation with high sensitivity and temporal resolution. It is based on the combination of linear absorption and nonlinear detection in a superconducting nanodetector, providing much higher efficiency than methods based on all-optical nonlinearities. Its temporal resolution is only limited by the quasiparticle energy relaxation time, which is directly measured to be in the 20 ps range for the NbN films used in this work. We present a general model of interferometric autocorrelation with these nonlinear detectors and discuss the comparison with other approaches and possible improvements.

Dual Imaging Single Vesicle Surface Protein Profiling and Early Cancer Detection.

Single vesicle molecular profiling has the potential to transform cancer detection and monitoring by precisely probing cancer-associated extracellular vesicles (EVs) in the presence of normal EVs in body fluids, but it is challenging due to the small EV size, low abundance of antigens on individual vesicles, and a complex biological matrix. Here, we report a facile dual imaging single vesicle technology (DISVT) for surface protein profiling of individual EVs and quantification of target-specific EV subtypes based on direct molecular capture of EVs from diluted biofluids, dual EV-protein fluorescence-light scattering imaging, and fast image analysis using Bash scripts, Python, and ImageJ. Plasmonic gold nanoparticles (AuNPs) were used to label and detect targeted surface protein markers on individual EVs with dark-field light scattering imaging at the single particle level. Monte Carlo calculations estimated that the AuNPs could detect EVs down to 40 nm in diameter. Using the DISVT, we profiled surface protein markers of interest across individual EVs derived from several breast cancer cell lines, which reflected the parental cells. Studies with plasma EVs from healthy donors and breast cancer patients revealed that the DISVT, but not the traditional bulk enzyme-linked immunosorbent assay, detected human epidermal growth factor receptor 2 (HER2)-positive breast cancer at an early stage. The DISVT also precisely differentiated HER2-positive breast cancer from HER2-negative breast cancer. We additionally showed that the amount of tumor-associated EVs was tripled in locally advanced patients compared to that in early-stage patients. These studies suggest that single EV surface protein profiling with DISVT can provide a facile and high-sensitivity method for early cancer detection and quantitative monitoring.

Bi2O3 nano-flakes as a cost-effective antibacterial agent.

Bismuth oxide is an important bismuth compound having applications in electronics, photo-catalysis and medicine. At the nanoscale, bismuth oxide experiences a variety of new physico-chemical properties because of its increased surface to volume ratio leading to potentially new applications. In this manuscript, we report for the very first time the synthesis of bismuth oxide (Bi2O3) nano-flakes by pulsed laser ablation in liquids without any external assistance (no acoustic, electric field, or magnetic field). The synthesis was performed by irradiating, pure bismuth needles immerged in de-ionized water, at very high fluence ∼160 J cm-2 in order to be highly selective and only promote the growth of two-dimensional structures. The x- and y-dimensions of the flakes were around 1 µm in size while their thickness was 47.0 ± 12.7 nm as confirmed by AFM analysis. The flakes were confirmed to be α- and γ-Bi2O3 by SAED and Raman spectroscopy. By using this mixture of flakes, we demonstrated that the nanostructures can be used as antimicrobial agents, achieving a complete inhibition of Gram positive (MSRA) and Gram negative bacteria (MDR-EC) at low concentration, ∼50 ppm.

Unexpected benefits of rapid growth rate for III-V nanowires.

In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowire growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographic defects, and have very high purity with minimal intrinsic dopant incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal intriguing behavior in the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.

Nonequilibrium spin distributions in single GaAs/AlGaAs core-shell nanowires are excited using resonant polarized excitation at 10 K. At all excitation energies, we observe strong photoluminescence polarization due to suppressed radiative recombination of excitons with dipoles aligned perpendicular to the nanowire. Excitation resonances are observed at 1- or 2-LO phonon energies above the exciton ground states. Using rate equation modeling, we show that, at the lowest energies, strongly nonequilibrium spin distributions are present and we estimate their spin relaxation rate.

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.

Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoexcited carriers in single InP nanowires. At early times after pulsed excitation, the photoluminescence line shape displays a characteristic broadening, consistent with emission from a degenerate, high-density electron-hole plasma. As the electron-hole plasma cools and the carrier density decreases, the emission rapidly converges toward a relatively narrow band consistent with free exciton emission from the InP nanowire. The free excitons in these single InP nanowires exhibit recombination lifetimes closely approaching that measured in a high-quality epilayer, suggesting that in these InP nanowires, electrons and holes are relatively insensitive to surface states. This results in higher quantum efficiencies than other single-nanowire systems as well as significant state-filling and band gap renormalization, which is observed at high electron-hole carrier densities.