1.
Phys Rev Lett
; 114(14): 146804, 2015 Apr 10.
Artículo
en Inglés
| MEDLINE
| ID: mdl-25910150
RESUMEN
We investigate low temperature grown, abrupt, epitaxial, nonintermixed, defect-free n-type and p-type Fe/GaAs(110) interfaces by cross-sectional scanning tunneling microscopy and spectroscopy with atomic resolution. The probed local density of states shows that a model of the ideal metal-semiconductor interface requires a combination of metal-induced gap states and bond polarization at the interface which is nicely corroborated by density functional calculations. A three-dimensional finite element model of the space charge region yields a precise value for the Schottky barrier height.