RESUMEN
Multifunctional sensors have played a crucial role in constructing high-integration electronic networks. Most of the current multifunctional sensors rely on multiple materials to simultaneously detect different physical stimuli. Here, we demonstrate the large piezo-pyroelectric effect in ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystals for simultaneous pressure and temperature sensing. The outstanding piezoelectric and pyroelectric properties of PMN-PT result in rapid response speed and high sensitivity, with values of 46 ms and 28.4 nA kPa-1 for pressure sensing, and 1.98 s and 94.66 nC °C-1 for temperature detection, respectively. By leveraging the distinct differences in the response speed of piezoelectric and pyroelectric responses, the piezo-pyroelectric effect of PMN-PT can effectively detect pressure and temperature from mixed-force thermal stimuli, which enables a robotic hand for stimuli classification. With appealing multifunctionality, fast speed, high sensitivity, and compact structure, the proposed self-powered bimodal sensor therefore holds significant potential for high-performance artificial perception.
RESUMEN
Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.