Single-crystalline GaN microdisk arrays grown on graphene for flexible micro-LED application.

We report the growth of single-crystalline GaN microdisk arrays on graphene and their application in flexible light-emitting diodes (LEDs). Graphene layers were directly grown onc-sapphire substrates using chemical vapor deposition and employed as substrates for GaN growth. Position-controlled GaN microdisks were laterally overgrown on the graphene layers with a micro-patterned SiO2mask using metal-organic vapor-phase epitaxy. The as-grown GaN microdisks exhibited excellent single crystallinity with a uniform in-plane orientation. Furthermore, we fabricated flexible micro-LEDs by achieving heteroepitaxial growth ofn-GaN, InxGa1-xN/GaN multiple quantum wells, andp-GaN layers on graphene-coated sapphire substrates. The GaN micro-LED arrays were successfully transferred onto bendable substrates and displayed strong blue light emission under room illumination, demonstrating their potential for integration into flexible optoelectronic devices.

Interfacial Modifier Having Julolidine for the Cathode Buffer Layer in PTB-7:PC70BM Based Inverted Organic Photovoltaic Cells.

The julolidine based interfacial modifier (IM-J) for cathode buffer layer following the "donor-acceptor" design concept with julolidine substituent as an electron donating moiety was incoporated to improve the surface properties of ZnO. Simple treatment of metal oxide type cathode buffer materials with organic interfacial modifier induces the enhanced photovoltaic performance and could effectively overcome several interfacial problems in inverted organic photovoltaic cells (I-OPVs). We studied on the coverage of IM-J on ZnO surface with variation of solution concentrations to reduce charge recombination and macroscopic phase separation. At the optimum condition, ZnO/IM-J (0.05 w/v%), IM-J significantly decreased the surface tension (46.1 mN/m) and improved surface morphology (RMS roughness: 0.61 nm). As a result, compared to the unmodified ZnO based device, the ZnO/IM-J based I-OPVs showed significantly improved power conversion efficiency (PCE) from 7.41 to 8.07% due to the increased photocurrent density (Jsc) and fill factor (FF). It is concluded that IM-J is one of the promising candidates for controlling electronic property of ZnO buffer layer in inverted organic photovoltaic cells. Also, our interfacial modified system can be utilized in other optoelectronic devices.

Highly Sensitive and Fast Responding Flexible Force Sensors Using ZnO/ZnMgO Coaxial Nanotubes on Graphene Layers for Breath Sensing.

The authors report the fabrication of highly sensitive, rapidly responding flexible force sensors using ZnO/ZnMgO coaxial nanotubes grown on graphene layers and their applications in sleep apnea monitoring. Flexible force sensors are fabricated by forming Schottky contacts to the nanotube array, followed by the mechanical release of the entire structure from the host substrate. The electrical characteristics of ZnO and ZnO/ZnMgO nanotube-based sensors are thoroughly investigated and compared. Importantly, in force sensor applications, the ZnO/ZnMgO coaxial structure results in significantly higher sensitivity and a faster response time when compared to the bare ZnO nanotube. The origin of the improved performance is thoroughly discussed. Furthermore, wireless breath sensing is demonstrated using the ZnO/ZnMgO pressure sensors with custom electronics, demonstrating the feasibility of the sensor technology for health monitoring and the potential diagnosis of sleep apnea.

Theoretical Study of Phenoxaphosphine-Based Blue Organic Light-Emitting Diode Exhibiting Thermally Activated Delayed Fluorescence.

We designed novel thermally activated delayed fluorescence (TADF) materials by combining the electron donors spiro[acridine-9,9'-fluorene] (D1) and 9,9-diphenyl acridan (PAC) with the electron acceptor phenoxaphosphine (OPO) unit (2D1-OPO and 2PAC-OPO) and used those property to compare it with that of the reference material using dimethylacridan (Ac) as an electron donor (Ac-OPO) for blue organic light-emitting diodes (OLEDs). To calculate electron distribution of highest occupied molecular orbitals (HOMO), lowest occupied molecular orbital (LUMO), lowest singlet (S1) energy and lowest triplet (T1) excitation states, density functional theory (DFT) and time-dependent DFT calculation have been used. The calculated energy difference (ΔEST) between the S1 and T1 states of 2D1-OPO (0.125 eV) and 2PAC-OPO (0.153 eV) were as small as that of Ac-OPO (0.127 eV). The results showed that 2D1-OPO is a good candidate for blue OLED emitter because it has an emission wavelength of 441.0 nm as well as a sufficiently small ΔEST value and large oscillator intensity value.

Noble Dibenzothiophene-Based Bipolar Hosts for Blue Organic Light-Emitting Diodes Using Thermally Activated Delayed Fluorescence.

Novel thermally activated delayed fluorescence (TADF) host materials for blue electrophosphores-cence were designed by combining the electron acceptor dibenzothiophene (DBT) unit and the electron donor acridine derivatives into a single molecular unit by density functional theory (DFT). Depending on the optimal charge transfer, DFT and time-dependent DFT (TD-DFT) calculations for the ground state were performed to obtain the energy of the singlet (S1) and triplet (T1) excited states of the TADF material for Hartree-Fock percentage of TD-DFT. The sufficiently large separation between the HOMO and LUMO resulted in a small difference in energy (ΔEST) between the S1 and T1 states using DFT and TD-DFT calculations. The host molecules retained high triplet energy and showed great potential for use in blue organic light-emitting diodes (OLED). The results showed that these molecules are a good TADF host materials because they have a low barrier to hole and electron injection with a balanced charge transporting property for both holes and electrons, and a small ΔEST.