Enhancement of nonlinear functionality of step-index silica fibers combining thermal poling and 2D materials deposition.

This work proposes a new route to overcome the limits of the thermal poling technique for the creation of second order nonlinearity in conventional silica optical fibers. We prove that it is possible to enhance the nonlinear behavior of periodically poled fibers merging the effects of poling with the nonlinear intrinsic properties of some materials, such as MoS2, which are deposited inside the cladding holes of a twin-hole silica fiber. The optical waves involved in a second harmonic generation process partially overlap inside the thin film of the nonlinear material and exploit its higher third order susceptibility to produce an enhanced SHG.

Composite material anti-resonant optical fiber electromodulator with a 3.5 dB depth.

The hollow regions of an anti-resonant fiber (ARF) offer an excellent template for the deposition of functional materials. When the optical properties of such materials can be modified via external stimuli, it offers a method to control the transmission properties of the fiber device. In this Letter, we show that the integration of a ${{\rm MoS}_2}$MoS2 film into the ARF voids allows the fiber to act as an electro-optical modulator. We record a maximum modulation depth of 3.5 dB at 744 nm, with an average insertion loss of 7.5 dB.

Solution-Based Synthesis of Few-Layer WS2 Large Area Continuous Films for Electronic Applications.

Unlike MoS2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS2 films using this approach has been more challenging. Here, we report a method for growth of few-layer WS2 that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH4)2WS4) films by two-step high temperature annealing without additional sulphurization. This facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS2 films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS2 films are highly crystalline and stoichiometric. Finally, WS2 films as-deposited on SiO2/Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.

Behavioral Outbursts in a Child with a Deletion Syndrome, Generalized Epilepsy, Global Developmental Delay, and Failure to Thrive.

A 7-year-old girl with 20q13.33 deletion and a history of generalized convulsive epilepsy presented to the Developmental and Behavioral Pediatrics Clinic due to concerns about her behavioral outbursts in the context of overall delayed development. Evaluation by the Developmental and Behavioral and Gastroenterology teams revealed failure to thrive (FTT) as the primary cause of the behavioral outbursts and developed a high-calorie, high-fat, high-protein nutritional counseling plan. Children who have FTT and a genetic disorder are often thought to not thrive because of their underlying genetic disorder; however, feeding skills and nutritional intake need to be thoroughly investigated before determining an etiology for FTT. Motoric, communicative, and developmental skills in children with genetic disorders may impede appropriate feeding mechanisms, inducing or exaggerating FTT in these children with developmental disabilities due to genetic etiologies. [Pediatr Ann. 2018;47(3):e130-e134.].