Cellulose Nanofiber-Based Triboelectric Nanogenerators for Efficient Air Filtration in Harsh Environments.

Advanced portable healthcare devices with high efficiencies, small pressure drops, and high-temperature resistance are urgently desired in harsh environments with high temperatures, high humidities, and high levels of atmospheric pollution. Triboelectric nanogenerators (TENGs), which serve as energy converters in a revolutionary self-powered sensor device, present a sustainable solution for meeting these requirements. In this work, we developed a porous negative triboelectric material by synthesizing ZIF-8 on the surface of a cellulose/graphene oxide aerogel, grafting it with trimethoxy(1H,1H,2H,2H-heptadecafluorodecyl)silane, and adding a negative corona treatment, and it was combined with a positive triboelectric material to create a cellulose nanofiber-based TENG self-powered filter. The devices achieved a balance between a small pressure drop (53 Pa) and high filtration efficiency (98.97%, 99.65%, and 99.93% for PM0.3, PM0.5, and PM1, respectively), demonstrating robust filtration properties at high temperatures and high humidities. Our work provides a new approach for developing self-powered wearable healthcare devices with excellent air filtration properties.

Atomic Evolution Mechanism and Suppression of Edge Threading Dislocations in Nitride Remote Heteroepitaxy.

The majority of dislocations in nitride epilayers are edge threading dislocations (TDs), which diminish the performance of nitride devices. However, it is extremely difficult to reduce the edge TDs due to the lack of available slip systems. Here, we systematically investigate the formation mechanism of edge TDs and find that besides originating at the coalescence boundaries, these dislocations are also closely related to geometrical misfit dislocations at the interface. Based on this understanding, we propose a novel strategy to reduce the edge TD density of the GaN epilayer by nearly 1 order of magnitude via graphene-assisted remote heteroepitaxy. The first-principles calculations confirm that the insertion of graphene dramatically reduces the energy barrier required for interfacial sliding, which promotes a new strain release channel. This work provides a unique approach to directly suppress the formation of edge TDs at the source, thereby facilitating the enhanced performance of photoelectronic and electronic devices.

ß-Ga2O3 Air-Channel Field-Emission Nanodiode with Ultrahigh Current Density and Low Turn-On Voltage.

Field-emission nanodiodes with air-gap channels based on single ß-Ga2O3 nanowires have been investigated in this work. With a gap of ∼50 nm and an asymmetric device structure, the proposed nanodiode achieves good diode characteristics through field emission in air at room temperature. Measurement results show that the nanodiode exhibits an ultrahigh emission current density, a high enhancement factor of >2300, and a low turn-on voltage of 0.46 V. More impressively, the emission current almost keeps constant over a wide range (8 orders of magnitude) of air pressures below 1 atm. Meanwhile, the fluctuation in field-emission current is below 8.7% during long-time monitoring, which is better than the best reported field-emission device based on ß-Ga2O3 nanostructures. All of these results indicate that ß-Ga2O3 air-gapped nanodiodes are promising candidates for vacuum electronics that can also operate in air.

Wafer-Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light-Emitting Diode.

Epitaxy growth and mechanical transfer of high-quality III-nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important technology for semiconductor industry. In this work, wafer-scale transferrable GaN epilayer with low dislocation density is successfully achieved through AlN/h-BN composite buffer layer and its application in flexible InGaN-based light-emitting diodes (LEDs) is demonstrated. Guided by first-principles calculations, the nucleation and bonding mechanism of GaN and AlN on h-BN is presented, and it is confirmed that the adsorption energy of Al atoms on O2 -plasma-treated h-BN is over 1 eV larger than that of Ga atoms. It is found that the introduced high-temperature AlN buffer layer induces sufficient tensile strain during rapid coalescence to compensate the compressive strain generated by the heteromismatch, and a strain-relaxation model for III-nitrides on h-BN is proposed. Eventually, the mechanical exfoliation of single-crystalline GaN film and LED through weak interaction between multilayer h-BN is realized. The flexible free-standing thin-film LED exhibits ≈66% luminescence enhancement with good reliability compared to that before transfer. This work proposes a new approach for the development of flexible semiconductor devices.

Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer.

Remote heteroepitaxy is known to yield semiconductor films with better quality. However, the atomic mechanisms in systems with large mismatches are still unclear. Herein, low-strain single-crystalline nitride films are achieved on highly mismatched (∼16.3%) sapphire via graphene-assisted remote heteroepitaxy. Because of a weaker interface potential, the in-plane compressive strain at the interface releases by 30%, and dislocations are prevented. Meanwhile, the lattice distortions in the epilayer disappear when the structure climbs over the atomic steps on substrates because graphene renders the steps smooth. In this way, the density of edge dislocations in as-grown nitride films reduces to the same level as that of the screw dislocations, which is rarely observed in heteroepitaxy. Further, the indium composition in InxGa1-xN/GaN multiquantum wells increases to ∼32%, enabling the fabrication of a yellow light-emitting diode. This study demonstrates the advantages of remote heteroepitaxy for bandgap tuning and opens opportunities for photoelectronic and electronic applications.

Atomic-Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD.

The performance of nitride devices is strongly affected by their polarity. Understanding the polarity determination and evolution mechanism of polar wurtzite nitrides on nonpolar substrates is therefore critically important. This work confirms that the polarity of AlN on sapphire prepared by metal-organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted, instead, experiences a spontaneous polarity inversion during the growth. It is found that at the initial growth stage, the interface favors the nitrogen-polarity, rather than the widely accepted metal-polarity or randomly coexisting. However, the polarity subsequently converts into the metal-polar situation, at first locally then expanding into the whole area, driven by the anisotropy of surface energies, which results in universally existing inherent inverse grain boundaries. Furthermore, vertical two-dimensional electron accumulation originating from the lattice symmetry breaking at the inverse grain boundary is first revealed. This work identifies another cause of high-density defects in nitride epilayers, besides lattice mismatch induced dislocations. These findings also offer new insights into atomic structure and determination mechanism of polarity in nitrides, providing clues for its manipulation toward the novel hetero-polarity devices.

Continuous Single-Crystalline GaN Film Grown on WS2 -Glass Wafer.

Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single-crystalline GaN film on WS2 -glass wafer is successfully performed by using the strong polarity of WS2 buffer layer and its perfectly matching lattice geometry with GaN. Furthermore, this study reveals that the first interfacial nitrogen layer plays a crucial role in the well-constructed interface by sharing electrons with both Ga and S atoms, enabling the single-crystalline stress-free GaN, as well as a violet light-emitting diode. This study paves a way for the heterogeneous integration of semiconductors and creates opportunities to break through the design and performance limitations, which are induced by substrate restriction, of the devices.

Heterogeneously integrated InGaN-based green microdisk light-emitters on Si (100).

Heterogeneous integration of nitrides on Si (100) is expected to open the door to the new possibilities for this material system in the fields of high-speed integrated photonics and information processing. In this work, GaN epitaxial layer grown on the patterned sapphire substrate is transferred onto Si (100) by a combination of wafer bonding, laser lift-off and chemical mechanical polishing (CMP) processes. The GaN epilayer transferred is uniformly thinned down to 800 nm with a root mean square surface roughness as low as 2.33 Å. The residual stress within the InGaN quantum wells transferred is mitigated by 79.4% after the CMP process. Accordingly, its emission wavelength exhibits a blue shift of 8.8 nm, revealing an alleviated quantum-confined Stark effect. Based on this platform, an array of microcavities with diverse geometrics and sizes are fabricated, by which optically-pumped green lasing at ∼505.8 nm is achieved with a linewidth of ∼0.48 nm from ∼12 µm microdisks. A spontaneous emission coupling factor of around 10-4 is roughly estimated based on the light output characteristics with increasing the pumping densities. Lasing behaviors beyond the threshold suggest that the microdisk suffers less thermal effects as compared to its undercut counterparts. The electrically-injected microdisks are also fabricated, with a turn-on voltage of ∼2.0 V and a leakage current as low as ∼2.4 pA at -5 V. Being compatible with traditional semiconductor processing techniques, this work provides a feasible solution to fabricate large-area heterogeneously integrated optoelectronic devices based on nitrides.

Transparent dual-band ultraviolet photodetector based on graphene/p-GaN/AlGaN heterojunction.

Versatile applications have driven a desire for dual-band detection that enables seeing objects in multiple wavebands through a single photodetector. In this paper, a concept of using graphene/p-GaN Schottky heterojunction on top of a regular AlGaN-based p-i-n mesa photodiode is reported for achieving solar-/visible-blind dual-band (275 nm and 365 nm) ultraviolet photodetector with high performance. The highly transparent graphene in the front side and the polished sapphire substrate at the back side allows both top illumination and back illumination for the dual band detection. A system limit dark current of 1×10-9 A/cm2 at a negative bias voltage up to -10 V has been achieved, while the maximum detectivity obtained from the detection wavebands of interests at 275 nm and 365 nm are ∼ 9.0 ×1012 cm·Hz1/2/W at -7.5 V and ∼8.0 × 1011 cm·Hz1/2/W at +10 V, respectively. Interestingly, this new type of photodetector is dual-functional, capable of working as either photodiode or photoconductor, when switched by simply adjusting the regimes of bias voltage applied on the devices. By selecting proper bias, the device operation mode would switch between a high-speed photodiode and a high-gain photoconductor. The device exhibits a minimum rise time of ∼210 µs when working as a photodiode and a maximum responsivity of 300 A/W at 6 µW/cm2 when working as a photoconductor. This dual band and multi-functional design would greatly extend the utility of detectors based on nitrides.

Strain modulated luminescence in green InGaN/GaN multiple quantum wells with microwire array by piezo-phototronic effect.

We have demonstrated piezo-phototronic enhanced modulation in green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a microwire array (MWA) structure. It is found that an a-axis oriented MWA structure induces more c-axis compressive strain than a flat structure when a convex bending strain is applied. Moreover, the photoluminescence (PL) intensity exhibits a tendency to increase first and then decrease under the enhanced compressive strain. Specifically, light intensity reaches a maximum of about 123% accompanied by 1.1-nm blueshift, and the carrier lifetime comes to the minimum simultaneously. The enhanced luminescence characteristics are attributed to strain-induced interface polarized charges, which modulate the built-in field in InGaN/GaN MQWs and could promote the radiative recombination of carriers. This work opens a pathway to drastically improve InGaN-based long-wavelength micro-LEDs with highly efficient piezo-phototronic modulation.

Graphene-Nanorod Enhanced Quasi-Van Der Waals Epitaxy for High Indium Composition Nitride Films.

The nitride films with high indium (In) composition play a crucial role in the fabrication of In-rich InGaN-based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain-modulated growth method, namely the graphene (Gr)-nanorod (NR) enhanced quasi-van der Waals epitaxy, is proposed to increase the In composition in InGaN alloy. The lattice transparency of Gr enables constraint of in-plane orientation of nitride film and epitaxial relationships at the heterointerface. The Gr interlayer together with NRs buffer layer substantially reduces the stress of the GaN film by 74.4%, from 0.9 to 0.23 GPa, and thus increases the In incorporation by 30.7%. The first principles calculations confirm that the release of strain accounts for the dramatic improvement. The photoluminescence peak of multiple quantum wells shifts from 461 to 497 nm and the functionally small-sized cyan light-emitting diodes of 7 × 9 mil2 are demonstrated. These findings provide an efficient approach for the growth of In-rich InGaN film and extend the applications of nitrides in advanced optoelectronic, photovoltaic, and thermoelectric devices.

Effects of remote sediment phosphor plates on high power laser-based white light sources.

Phosphor-converted blue laser diodes are regarded as the next-generation high-brightness solid-state lighting sources. However, it is difficult to obtain white light with high angular color uniformity due to the Gaussian distribution of the laser light sources. Meanwhile, laser excitation power density of the light source is high, which would bring serious heating effects to the phosphor layers. In this study, a strategy has been proposed to solve the problem by using remote sediment phosphor plates. In detail, we have compared the effects of remote sediment/non-sediment phosphor plates to the phosphor-converted blue laser diodes on the overall light output characteristics, angular optical distribution properties, as well as their thermal performance. The emission from sediment phosphor samples has been found more divergent, and angular deviation in the correlated color temperature of the emitted light could be greatly reduced from 1486 to 294 K, yet with only 5% luminous flux loss, as compared to non-sediment phosphor samples. Most importantly, the sediment phosphor sample pushes the power damage threshold up to 588.1 W/cm2 (non-sediment sample: 512.3 W/cm2). Our work has demonstrated the sediment phosphor plates would ameliorate the angular color uniformity for the laser-based lighting source, while extending its lifespan with improved thermal stability.

Gene expression-based immune infiltration analyses of renal cancer and their associations with survival outcome.

BACKGROUND: Renal cancer is a common malignant tumor with an increasing incidence rate. METHODS: In this study, based on the gene expression profiles, we analyzed the compositions of tumor-infiltrating immune cells (TIICs) in renal cancer and paracancerous samples using CIBERSORT. The proportions of 22 TIICs subsets in 122 paired renal carcinoma and paracancerous samples, and 224 Wilms tumor (WT) samples varied between intragroup and intergroup. RESULTS: After analyzed the difference of TIICs composition between renal cancer and paired paracancerous samples, we found that M0 macrophages and CD8 T cells were significantly elevated, while naive B cells were significantly decreased in renal cancer samples compared with paracancerous samples. Survival analysis showed that high overall TIICs proportion, the low proportion of resting mast cells and the high proportion of activated memory CD4 T cells were associated with poor prognosis of renal cancer patients. In addition, 3 clusters were identified by hierarchical clustering analysis, and they presented a distinct prognosis. Cluster 1 had superior survival outcomes, while cluster 2 had an inferior survival outcome. CONCLUSIONS: Our study indicated that overall TIICs proportion, certain TIICs subset proportion, including resting mast cells and activated memory CD4 T cells, and distinct cluster patterns were associated with the prognosis of renal cancer, which was significant for the clinical surveillance and treatment of renal cancer.

Understanding homoepitaxial growth of horizontal kinked GaN nanowires.

Epitaxial horizontal nanowires (NWs) have attracted much attention due to their easily large-scale integration. From the reported literature, epitaxial growth is usually driven by minimization of strain between NW and substrate, which governs the growth along with specific crystallographic orientation. Here, we report the first homoepitaxial growth of horizontal GaN NWs from a surface-directed vapor-liquid-solid growth method. The NWs grow along with six symmetry-equivalent 〈1-100〉 (m-axis) directions, exhibiting a random 60°/120° kinked configuration. Owing to homoepitaxial growth, strain could be eliminated. From the obtained results, we suggest that the formation the horizontal NWs, and their growth direction /orientation is not directly related to the strain minimization. A general rule based on the epitaxial relationship and potential low-index growth orientation is proposed for understanding the arrangement of epitaxial horizontal NWs. It is deduced that kinking of the horizontal NWs was attributed to unintentional guided growth determined by the roughness of the substrates' surface. This study provides an insight for a better understanding of the evolution of epitaxial horizontal NWs, especially for the growth direction/orientation.

Values of serum CA125, NSE and 24-hour urine VMA in diagnosis and prediction of treatment of paediatric neuroblastoma.

BACKGROUND: Paediatric neuroblastoma is a relatively common type of malignant tumour originating from neural crest tissues. Early diagnosis and the performance of specific therapeutic strategies can increase the survival rate and improve the prognosis of children with neuroblastoma. METHODS: A total of 86 children with neuroblastoma were recruited in this research, and 50 healthy children aged 1-12 years were also selected as controls. Twenty-four-hour urine vanillylmandelic acid (VMA) was evaluated by high-performance liquid chromatography. Serum carbohydrate antigen 125 CA125 and neuron-specific enolase (NSE) levels were evaluated by electrochemiluminescence in Cobas E411 autoanalyser. RESULTS: The serum CA125, NSE and 24-hour urine VMA levels of children with stage III-IVs neuroblastoma were significantly higher than those of children with clinical stages I-II; the serum CA125, NSE and 24-hour urine VMA levels of children in the effective treatment group were significantly lower than those in the treatment-ineffective group. The serum CA125 generated sensitivity and specificity of 71.88% and 59.26%, combined with an AUC (area under the curve) of 0.7049. The serum NSE generated sensitivity and specificity of 68.75% and 81.48%, combined with an AUC of 0.7407. The 24-hour urine VMA generated sensitivity and specificity of 90.63% and 59.26%, combined with an AUC of 0.7986. CONCLUSION: In conclusion, serum CA125, NSE and 24-hour urine VMA levels before treatment could assess the condition of children with neuroblastoma and predict the effect of treatment.

Three-dimensional metal-semiconductor-metal AlN deep-ultraviolet detector.

Conventional metal-semiconductor-metal (MSM) ultraviolet (UV) detectors have the disadvantage of limited adjustable structural parameters, finite electrical field, and long carrier path. In this Letter, we demonstrate a three-dimensional (3D) MSM structural AlN-based deep-UV (DUV) detector, fabricated through simple trench etching and metal deposition, while flip bonding to the silicon substrate forms a flip-chip 3D-MSM (FC-3DMSM) device. 3D-MSM devices exhibit improved responsiveness and response speed, compared with conventional MSM devices. Time-dependent photoresponse of all devices is also investigated here. The enhanced performance of the 3D-MSM device is to be attributed to the intensified electrical field from the 3D metal electrode configuration and the inhibition of the carrier vertical transport, which unambiguously increases the carrier collection efficiency and migration speed, and thus the responsivity and speed as well. This work should advance the design and fabrication of AlN-based DUV detectors.

Crystal phase evolution in kinked GaN nanowires.

Seed-catalysed growth has been proved to be an ideal method to selectively tune the crystal structure of III-V nanowires along its growth axis. However, few results on relevant nitride NWs have been reported. In this study, we demonstrate the growth of epitaxial kinked wurtzite (WZ)/zinc-blende (ZB) heterostructure GaN NW arrays under the oxygen rich condition using hydride vapour-liquid-solid vapour phase epitaxy (VLS-HVPE). The typical GaN crystal includes WZ and ZB phases throughout the whole NW structure. A detailed structural analysis indicates that a stacking faults free zone was occasionally observed near the NW tips and in the relatively long kinked 〈11-23〉 directions segments (>200 nm). Furthermore, some NWs (<5%) develop phase boundaries, resulting in kinking and crystal phase evolution. A layer-by-layer growth mode was proposed to explain the crystal phase evolution along the phase boundaries. This study provides new insights into the controlled growth of wurtzite (WZ)/zinc-blende (ZB) heterostructure GaN NW.

Design of AlN ultraviolet metasurface for single-/multi-plane holography.

The metasurface promises an unprecedented way for manipulating wavefronts and has strengths in large information capacity for the hologram. However, strong absorption loss for most dielectric materials hinders the realization of such a metasurface operating in the ultraviolet (UV) spectrum. Herein, aluminum nitride (AlN) with an ultrawide bandgap has been utilized as the material of the UV metasurface for multi-plane holography, increasing the information capacity and security level of information storage simultaneously. The metasurface for multi-plane holography achieving a correlation coefficient of over 0.8 with three reconstructed images has been investigated, and also the single-plane holography at an efficiency of 34.05%. Our work might provide potential application in UV nanophotonics.

Surface-Polarity-Induced Spatial Charge Separation Boosts Photocatalytic Overall Water Splitting on GaN Nanorod Arrays.

Photocatalytic overall water splitting has been recognized as a promising approach to convert solar energy into hydrogen. However, most of the photocatalysts suffer from low efficiencies mainly because of poor charge separation. Herein, taking a model semiconductor gallium nitride (GaN) as an example, we uncovered that photogenerated electrons and holes can be spatially separated to the nonpolar and polar surfaces of GaN nanorod arrays, which is presumably ascribed to the different surface band bending induced by the surface polarity. The photogenerated charge separation efficiency of GaN can be enhanced significantly from about 8 % to more than 80 % via co-exposing polar and nonpolar surfaces. Furthermore, spatially assembling reduction and oxidation cocatalysts on the nonpolar and polar surfaces remarkably boosts photocatalytic overall water splitting, with the quantum efficiency increased from 0.9 % for the film photocatalyst to 6.9 % for the nanorod arrays photocatalyst.

Simultaneously improve the luminous efficiency and color-rendering index of GaN-based white-light-emitting diodes using metal localized surface plasmon resonance.

With the penetration of semiconductor lighting, GaN-based white-light-emitting diodes (WLEDs) with a high color-rendering index (CRI) and simultaneous high luminous efficiency (LE) are required, especially for high-quality indoor lighting. Here, by adopting metal nanoparticles (Ag and Au NPs) into hybridized color conversion material composed of broadband LuAG:Ce phosphor and narrowband CdSe/ZnS red quantum dots, we have fabricated AgAu-WLEDs with simultaneously increased LE (12% increment at 40 A/cm2) and CRI (maximum of 94.5), and decreased correlated color temperature (CCT, from CCT=6000 K to = 4800 K), compared with WLEDs without metal NPs. This improved performance of WLEDs is ascribed to increased color conversion efficiency brought from localized surface plasmon resonance and thus a strong resonant light scattering effect from the incorporated metal NPs. We believe the approach reported in this work will find its application in GaN WLEDs, thus advancing the development of high-efficiency and quality semiconductor lighting.