A way to identify whether a DFT gap is from right reasons or error cancellations: The case of copper chalcogenides.

Gap opening remains elusive in copper chalcogenides (Cu2X, X = S, Se, and Te), not least because Hubbard + U, hybrid functional, and GW methods have also failed. In this work, we elucidate that their failure originates from a severe underestimation of the 4s-3d orbital splitting of the Cu atom, which leads to a band-order inversion in the presence of an anionic crystal field. As a result, the Fermi energy is pinned due to symmetry, yielding an invariant zero gap. Utilizing the hybrid pseudopotentials to correct the underestimation on the atomic side opens up gaps of experimental magnitude in Cu2X, suggesting their predominantly electronic nature. Our work not only clarifies the debate about the Cu2X gap but also provides a way to identify which of the different methods really captures the physical essence and which is the result of error cancellation.

Verification and Analysis of Filter Paper-Based Intracellular Delivery of Exogenous Substances.

The intracellular delivery of exogenous substances is an essential technical means in the field of biomedical research, including cell therapy and gene editing. Although many delivery technologies and strategies are present, each technique has its own limitations. The delivery cost is usually a major limiting factor for general laboratories. In addition, simplifying the operation process and shortening the delivery time are key challenges. Here, we develop a filter paper-syringe (FPS) delivery method, a new type of cell permeation approach based on filter paper. The cells in a syringe are forced to pass through the filter paper quickly. During this process, external pressure forces the cells to collide and squeeze with the fiber matrix of the filter paper, causing the cells to deform rapidly, thereby enhancing the permeability of the cell membrane and realizing the delivery of exogenous substances. Moreover, the large gap between the fiber networks of filter paper can prevent the cells from bearing high pressure, thus maintaining high cell vitality. Results showed that the slow-speed filter paper used can realize efficient intracellular delivery of various exogenous substances, especially small molecular substances (e.g., 3-5 kDa dextran and siRNA). Meanwhile, we found that the FPS method not only does not require a lengthy operating step compared with the widely used liposomal delivery of siRNA but also that the delivery efficiency is similar. In conclusion, the FPS approach is a simple, easy-to-operate, and fast (about 2 s) delivery method and may be an attractive alternative to membrane destruction-based transfection.

Liquid Metal-Doped Conductive Hydrogel for Construction of Multifunctional Sensors.

Interest in wearable and stretchable multifunctional sensors has grown rapidly in recent years. The sensing elements must accurately detect external stimuli to expand their applicability as sensors. However, the sensor's self-healing and adhesion to a target object have been major challenges in developing such practical and versatile devices. In this study, we prepared a hydrogel (LM-SA-PAA) composed of liquid metal (LM), sodium alginate (SA), and poly(acrylic acid) (PAA) with ultrastretchable, excellent self-healing, self-adhesive, and high-sensitivity sensing capabilities that enable the conformal contact between the sensor and skin even during dynamic movements. The excellent self-healing performance of the hydrogel stems from its double cross-linked networks, including physical and chemical cross-linked networks. The physical cross-link formed by the ionic interaction between the carboxyl groups of PAA and gallium ions provide the hydrogel with reversible autonomous repair properties, whereas the covalent bond provides the hydrogel with a stable and strong chemical network. Alginate forms a microgel shell around LM nanoparticles via the coordination of its carboxyl groups with Ga ions. In addition to offering exceptional colloidal stability, the alginate shell has sufficient polar groups, ensuring that the hydrogel adheres to diverse substrates. Based on the efficient electrical pathway provided by the LM, the hydrogel exhibited strain sensitivity and enabled the detection of various human motions and electrocardiographic monitoring. The preparation method is simple and versatile and can be used for the low-cost fabrication of multifunctional sensors, which have broad application prospects in human-machine interface compatibility and medical monitoring.

On the bandgap underestimation of delafossite transparent conductive oxides CuMO2 (M = Al, Ga and In): Role of pseudopotentials.

We report a first-principles study on the electronic and optical properties of delafossite CuMO2 (M = Al, Ga and In) using the recently developed hybrid functional pseudopotentials. We obtain trends of the fundamental and optical gaps with increasing M-atomic number, in agreement with experiment. In particular, we reproduce the experimental fundamental gap, optical gap, and Cu 3d energy of CuAlO2 almost perfectly, in contrast to the various calculations that have traditionally focused on valence electrons, which are unable to reproduce these key properties simultaneously. Since all that distinguishes our calculations is simply the use of a different Cu pseudopotential with a partially exact exchange interaction, this suggests that an inappropriate description of the electron-ion interaction may play a role in the density functional theory bandgap problem for CuAlO2. Applying Cu hybrid pseudopotentials to CuGaO2 and CuInO2 is also effective, yielding optical gaps that are very close to experiment. However, due to the limited experimental data for these two oxides, a comprehensive comparison as that for CuAlO2 is not possible. Furthermore, our calculations yield large exciton binding energies for delafossite CuMO2, all around 1 eV.

Expression of ApoA5 and its function in the right ventricular failing and remodeling secondary to pulmonary hypertension.

Right heart failure and right ventricular (RV) remodeling were the main reason for mortality of pulmonary hypertension (PH) patients. Apolipoprotein AV (ApoA5) is a key regulator of plasma triglyceride and have multifunction in several target organs. We detected decreased ApoA5 in serum of patients with PH and both in serum and RV of monocrotaline-induced PH model. Exogenously, overexpression ApoA5 by adenovirus showed protective effects on RV failure and RV fibrosis secondary to PH. In addition, in vitro experiments showed ApoA5 attenuated the activation of fibroblast induced by transforming growth factor ß1 and synthesis and secretion of extracellular matrix by inhibiting focal adhesion kinase-c-Jun N-terminal kinase-Smad3 pathway. Finally, we suggest that ApoA5 may potentially be a pivotal target for RV failure and fibrosis secondary of PH.

Accuracy trade-off between one-electron and excitonic spectra of cuprous halides in first-principles calculations.

Because of the sophisticated error cancellation in the density functional theory (DFT)-based calculations, a theoretically more accurate input would not guarantee a better output. In this work, our first-principles GW plus Bethe-Salpeter equation calculations using pseudopotentials show that cuprous halides (CuCl and CuBr) are such extreme cases for which a better one-electron band is not accompanied with a better exciton binding energy. Moreover, we find that the exchange interaction of Cu core electrons plays a crucial role in their ground-state electronic properties, especially in the energy gap and macroscopic dielectric constant. Our work provides new insights into the understanding of the electronic structure of cuprous halides from the DFT perspective.

Spin-Triplet Excitonic Insulator: The Case of Semihydrogenated Graphene.

While various excitonic insulators have been studied in the literature, due to the perceived too-small spin splitting, spin-triplet excitonic insulator is rare. In two-dimensional systems such as a semihydrogenated graphene (known as graphone), however, it is possible, as revealed by first-principles calculations coupled with Bethe-Salpeter equation. The critical temperature, given by an effective Hamiltonian, is 11.5 K. While detecting excitonic insulators is still a daunting challenge, the condensation of triplet excitons will result in spin superfluidity, which can be directly measured by a transport experiment. Nonlocal dielectric screening also leads to an unexpected phenomenon, namely, an indirect-to-direct transition crossover between single-particle band and exciton dispersion in the semihydrogenated graphene, which offers yet another test by experiment.

Half-Excitonic Insulator: A Single-Spin Bose-Einstein Condensate.

First-principles calculations reveal an unusual electronic state (dubbed as half excitonic insulator) in monolayer 1T-MX_{2} (M=Co, Ni and X=Cl, Br). Its one spin channel has a many-body ground state due to excitonic instability, while the other is characterized by a conventional band insulator gap. This disparity arises from a competition between the band gap and exciton binding energy, which exhibits a spin dependence due to different orbital occupations. Such a state can be identified by optical absorption measurements and angle-resolved photoemission spectroscopy. Our theory not only provides new insights for the study of exciton condensation in magnetic materials but also suggests that strongly correlated materials could be fertile candidates for excitonic insulators.

Understanding the origin of bandgap problem in transition and post-transition metal oxides.

Improving electronic structure calculations for practical and technologically important materials has been a never-ending pursue. This is especially true for transition and post-transition metal oxides for which the current first-principles approaches still suffer various drawbacks. Here, we present a hierarchical-hybrid functional approach built on the use of pseudopotentials. The key is to introduce different amounts of exact exchange to core and valence electrons. It allows for treating the delocalization errors of sp and d electrons differently, which have been known to be an important source of error for the band structure. Using wurtzite ZnO as a prototype, we show that the approach is successful in simultaneously reproducing the bandgap and d-band position. Importantly, the same approach, without having to change the hybrid mixing parameters from those of Zn, works reasonably well for other binary 3d transition and post-transition metal oxides across board. Our findings thus point out a new direction of systematically improving the exchange functional in first-principles calculations.

Effect of Hartree-Fock pseudopotentials on local density functional theory calculations.

Density functional theory (DFT) can run into serious difficulties with localized states in elements such as transition metals with occupied d states and oxygen. In contrast, including a fraction of the Hartree-Fock exchange can be a better approach for such localized states. Here, we develop Hartree-Fock pseudopotentials to be used alongside DFT for solids. The computational cost is on a par with standard DFT. Calculations for a range of II-VI, III-V and group-IV semiconductors with diverse physical properties show an observably improved band gap for systems containing d-electrons, pointing to a new direction in electronic theory.

Irreparable Defects Produced by the Patching of h-BN Frontiers on Strongly Interacting Re(0001) and Their Electronic Properties.

Clarifying the origin and the electronic properties of defects in materials is crucial since the mechanical, electronic and magnetic properties can be tuned by defects. Herein, we find that, for the growth of h-BN monolayer on Re(0001), the patching frontiers of different domains can be classified into three types, i.e., the patching of B- and N-terminated (B|N-terminated) frontiers, B|B-terminated frontiers and N|N-terminated frontiers, which introduce three types of defects, i.e., the "heart" shaped moiré-level defect, the nonbonded and bonded line defects, respectively. These defects were found to bring significant modulations to the electronic properties of h-BN, by introducing band gap reductions and in-gap states, comparing with perfect h-BN on Re(0001) with a band gap of ∼3.7 eV. The intrinsic binary composition nature of h-BN and the strong h-BN-Re(0001) interaction are proposed to be cooperatively responsible for the formation of these three types of defects. The former one provides different types of h-BN frontiers for domain patching. And the later one induces multinucleation but aligned growth of h-BN domains on Re(0001), thus precluding their subsequent coalescence to some extent. This work offers a deep insight into the categories of defects introduced from the patching growth of two-dimensional layered materials, as well as their electronic property modulation through the defect engineering.

Unique Transformation from Graphene to Carbide on Re(0001) Induced by Strong Carbon-Metal Interaction.

During graphene growth on various transition metals in the periodic table, metal carbides always emerge to behave as complex intermediates. On VIII metals, metastable carbides usually evolve and then transform into graphene along the phase interfaces, and even no metal carbides can form on IB-IIB metals. In contrast, during graphene growth on group IVB-VIB metals, carbides are usually generated even before the evolution of graphene and stably exist throughout the whole growth process. However, for the remaining transition metals, e.g., group VIIB, located in between IVB-VIB and VIII, the interplay between graphene and carbide is still vague. Herein, on Re(0001) (VIIB), we have revealed a novel transition from graphene to metal carbide (reverse to that on VIII metals) for the first time. This transition experienced graphene decomposition, dissolution, and carbon segregation processes, as evidenced by scanning tunneling microscopy (STM) and on-site, variable-temperature low electron energy diffraction (LEED) characterizations. This work thus completes the picture about the interplay between graphene and carbide on/in transition metals in the periodic table, as well as discloses a new territory for the growth of carbon-related materials, especially the metal carbide.

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

The existence of defects in 2D semiconductors has been predicted to generate unique physical properties and markedly influence their electronic and optoelectronic properties. In this work, it is found that the monolayer MoS2 prepared by chemical vapor deposition is nearly defect-free after annealing under ultrahigh vacuum conditions at ≈400 K, as evidenced by scanning tunneling microscopy observations. However, after thermal annealing process at ≈900 K, the existence of dominant single sulfur vacancies and relatively rare vacancy chains (2S, 3S, and 4S) is convinced in monolayer MoS2 as-grown on Au foils. Of particular significance is the revelation that the versatile vacancies can modulate the band structure of the monolayer MoS2 , leading to a decrease of the bandgap and an obvious n-doping effect. These results are confirmed by scanning tunneling spectroscopy data as well as first-principles theoretical simulations of the related morphologies and the electronic properties of the various defect types. Briefly, this work should pave a novel route for defect engineering and hence the electronic property modulation of three-atom-thin 2D layered semiconductors.

Scaling Universality between Band Gap and Exciton Binding Energy of Two-Dimensional Semiconductors.

Using first-principles GW Bethe-Salpeter equation calculations and the k·p theory, we unambiguously show that for two-dimensional (2D) semiconductors, there exists a robust linear scaling law between the quasiparticle band gap (E_{g}) and the exciton binding energy (E_{b}), namely, E_{b}≈E_{g}/4, regardless of their lattice configuration, bonding characteristic, as well as the topological property. Such a parameter-free universality is never observed in their three-dimensional counterparts. By deriving a simple expression for the 2D polarizability merely with respect to E_{g}, and adopting the screened hydrogen model for E_{b}, the linear scaling law can be deduced analytically. This work provides an opportunity to better understand the fantastic consequence of the 2D nature for materials, and thus offers valuable guidance for their property modulation and performance control.

High Detectivity Graphene-Silicon Heterojunction Photodetector.

A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors.

Selenium-Enriched Nickel Selenide Nanosheets as a Robust Electrocatalyst for Hydrogen Generation.

To address the urgent need for clean and sustainable energy, the rapid development of hydrogen-based technologies has started to revolutionize the use of earth-abundant noble-metal-free catalysts for the hydrogen evolution reaction (HER). Like the active sites of hydrogenases, the cation sites of pyrite-type transition-metal dichalcogenides have been suggested to be active in the HER. Herein, we synthesized electrodes based on a Se-enriched NiSe2 nanosheet array and explored the relationship between the anion sites and the improved hydrogen evolution activity through theoretical and experimental studies. The free energy for atomic hydrogen adsorption is much lower on the Se sites (0.13 eV) than on the Ni sites (0.87 eV). Notably, this electrode benefits from remarkable kinetic properties, with a small overpotential of 117 mV at 10 mA cm(-2) , a low Tafel slope of 32 mV per decade, and excellent stability. Control experiments showed that the efficient conversion of H(+) into H2 is due to the presence of an excess of selenium in the NiSe2 nanosheet surface.

Quasi-freestanding monolayer heterostructure of graphene and hexagonal boron nitride on Ir(111) with a zigzag boundary.

In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a focus of graphene research owing to its tunable bandgap and intriguing properties. We report herein the synthesis of a quasi-freestanding h-BN-G monolayer heterostructure on a weakly coupled Ir(111) substrate, where graphene and h-BN possess distinctly different heights and surface corrugations. An atomically sharp zigzag type boundary has been found to dominate the patching interface between graphene and h-BN, as evidenced by high-resolution Scanning tunneling microscopy investigation as well as density functional theory calculation. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the patching boundary. The present work offers a deep insight into the h-BN-graphene boundary structures both geometrically and electronically together with the effect of adlayer-substrate coupling.

Construction of 3D V2O5/hydrogenated-WO3 nanotrees on tungsten foil for high-performance pseudocapacitors.

3D semiconductor nanostructures have proved to be a rich system for the exploring of high-performance pseudocapacitors. Herein, a novel 3D WO3 nanotree on W foil is developed via a facile and green method. Both capacitance and conductivity of the WO3 nanotree electrode are greatly improved after hydrogenation treatment (denoted as H-WO3). First-principles calculation based on the experiments reveals the mechanism of the hydrogenation treatment effect on the 3D WO3 nanotrees. The surface O of 3D WO3 nanotrees gains electrons from the adsorbed H, and consequently certain electrons are back-donated to the neighboring W, thus providing the conducting channel on the surface. Ultrathin V2O5 films were coated on the H-WO3 nanotrees via a simple, low-cost, environmentally friendly electrochemical technique. This V2O5/H-WO3 electrode exhibited a remarkable specific capacitance of 1101 F g(-1) and an energy density of 98 W h kg(-1). The solid-state device based on the V2O5/H-WO3 electrodes shows excellent stability and practical application. Our work opens up the potential broad application of hydrogenation treatment of semiconductor nanostructures in pseudocapacitors and other energy storage devices.

Ferromagnetism and topological surface states of manganese doped Bi2Te3: insights from density-functional calculations.

Based on first-principles calculations, the electronic, magnetic, and topological characters of manganese (Mn) doped topological insulator Bi2Te3 were investigated. The Mn substitutionally doped Bi2Te3, where Mn atoms tend to be uniformly distributed, was shown to be p-type ferromagnetic, arising from hole-mediated Ruderman-Kittel-Kasuya-Yosida interaction. Mn doping leads to an intrinsic band splitting at Γ point, which is substantially different from that of nonmagnetic dopant. The topological surface state of Bi2Te3 is indeed gapped by Mn doping; however, the bulk conductance limits the appearance of an insulating state. Moreover, the n-type doping behavior of Bi2Te3 is derived from Mn entering into the van der Waals gap of Bi2Te3.

Sensitivity limits and scaling of bioelectronic graphene transducers.

Semiconducting nanomaterials are being intensively studied as active elements in bioelectronic devices, with the aim of improving spatial resolution. Yet, the consequences of size-reduction on fundamental noise limits, or minimum resolvable signals, and their impact on device design considerations have not been defined. Here, we address these key issues by quantifying the size-dependent performance and limiting factors of graphene (Gra) transducers under physiological conditions. We show that suspended Gra devices represent the optimal configuration for cardiac extracellular electrophysiology in terms of both transducer sensitivity, systematically ~5× higher than substrate-supported devices, and forming tight bioelectronic interfaces. Significantly, noise measurements on free-standing Gra together with theoretical calculations yield a direct relationship between low-frequency 1/f noise and water dipole-induced disorders, which sets fundamental sensitivity limits for Gra devices in physiological media. As a consequence, a square-root-of-area scaling of Gra transducer sensitivity was experimentally revealed to provide a critical design rule for their implementation in bioelectronics.