The effects of nontoxic bio-based substances (egg white) on the performance and passivation of ZnO nanorods arrays-based light emitting devices.

An innovative approach is proposed to passivate the existing defects from metal oxide semiconductors by functionalizing nontoxic bio-based substances. As a demonstration, we synthesized zinc oxide nanorods (ZnO NRs) using a hydrothermal method and incorporated chicken egg white (albumen) as a passivator to the defects. X-ray diffraction analysis of ZnO NRs shows enhanced quality and crystallinity features after incorporating albumen. XPS measurements were performed not only to introduce the chemical bonding between the albumen and the bare ZnO NRs but also specifically provide evidence of successful capping and defect passivation to the surface layer of ZnO NRs. It was observed that when the albumen was annealed, it formed sulfhydryl groups and disulfide bonds (which created disulfide bridges) from the chemical reaction in irreversible thermal denaturation. Steady-state photoluminescence of ZnO NRs showed two emission bands, i.e. near band-edge emission (NBE) and deep-level emission (DL). The NBE is significantly improved as compared to DL emission after capping and annealing the albumen, while the quenching of DL emission confirmed the reduced defects arising from the surface of ZnO NRs. The advantages and enhanced characteristics of the albumen-capped ZnO NRs led to fabricating a stable and highly efficient light-emitting device. This work opens the great potential of utilizing nontoxic and low-cost biomaterials in passivating the defects of metal oxide nanomaterials for the development of bio-inspired and stable optoelectronic devices.

Facile synthesis ofß-Ga2O3based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides.

Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizingß-Ga2O3via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in x-ray diffraction patterns and full surface coverage formation in scanning electron microscopy images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesizedß-Ga2O3was fabricated as thin film transistors (TFT). Theß-Ga2O3TFT fabricated exhibits remarkable electron mobility (1.28 cm2Vs-1) and a good current ratio (Ion/Ioff) of 2.06 × 105. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene inß-Ga2O3TFT devices, increasing the electrical device mobility by ∼8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that theß-Ga2O3networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.

All-carbon stretchable and cavity-free white lasers.

Flexible, stretchable, and bendable electronics and optoelectronics have a great potential for wide applications in smart life. An environmentally friendly, cost effective and wide-angle emission laser is indispensable for the emerging technology. In this work, circumvent the challenge issue, cavity-free and stretchable white light lasers based on all carbon materials have been demonstrated by integration of fluorescent carbon quantum dots (CQDs) and crumpled graphene. The typical emission spectrum of the cavity-free laser based on all-carbon materials has a CIE chromaticity coordinate of (0.30, 0.38) exhibiting an intriguing broadband white-light emission. The unprecedented and non-toxic stretchable and white light cavity-free lasers based on all-carbon materials can serve as next-generation optoelectronic devices for a wide range application covering solid-state lighting and future wearable technologies.

All-carbon stretchable and cavity-free white lasers: publisher's note.

This publisher's note contains corrections to [Opt. Express30, 20213 (2022)10.1364/OE.457921].

The dual-detection mode and improved photoresponse of IGZO-based photodetectors by interfacing with water-soluble biomaterials.

The use of conventional fabrication methods rapidly developed the performance and notable enhancements of optoelectronic devices. However, it proved challenging to develop and demonstrate stable optoelectronic devices with biodegradability and biocompatibility properties towards sustainable development and extensive applications. This study incorporates a water-soluble Cr-phycoerythrin (Cr-PE) biomaterial to observe its optical and electronic properties effects on the pristine indium gallium zinc oxide (IGZO)-based photodetector. The fabricated photodetector demonstrates an extended absorption detection region, enhanced optoelectronic performance, and switchable function properties. The resulting photocurrent and responsivity of the IGZO/Cr-PE structure have increased by 5.7 and 7.1 times as compared to the pristine IGZO photodetector. It was also observed that the photodetector could operate in UV and UV-visible with enhanced optical properties by effectively adding the water-soluble Cr-PE. Also, the sensing region of IGZO photodetector becomes changeable. It exhibits switchable dual detection by alternatively dripping and removing the Cr-PE on the IGZO layer. Different measurement parameters such as detectivity, repeatability, and sensitivity are highlighted to effectively prove the advantage of including Cr-PE on the photodetector structure. This study contributes to understanding the potential functions in improving optoelectronic devices through an environmental-friendly method.

Mechanisms of negative differential resistance in glutamine-functionalized WS2quantum dots.

Understanding the mechanism of the negative differential resistance (NDR) in transition metal dichalcogenides is essential for fundamental science and the development of electronic devices. Here, the NDR of the current-voltage characteristics was observed based on the glutamine-functionalized WS2quantum dots (QDs). The NDR effect can be adjusted by varying the applied voltage range, air pressure, surrounding gases, and relative humidity. A peak-to-valley current ratio as high as 6.3 has been achieved at room temperature. Carrier trapping induced by water molecules was suggested to be responsible for the mechanism of the NDR in the glutamine-functionalized WS2QDs. Investigating the NDR of WS2QDs may promote the development of memory applications and emerging devices.

Aggregation-induced negative differential resistance in graphene oxide quantum dots.

Negative differential resistance (NDR) devices have attracted considerable interest due to their potential applications in switches, memory devices, and analog-to-digital converters. Modulation of the NDR is an essential issue for the development of NDR-based devices. In this study, we successfully synthesized graphene oxide quantum dots (GOQDs) using graphene oxide, cysteine, and H2O2. The current-voltage characteristics of the GOQDs exhibit a clear NDR in the ambient environment at room temperature. A peak-to-valley ratio as high as 4.7 has been achieved under an applied voltage sweep from -6 to 6 V. The behavior of the NDR and its corresponding peak-to-valley ratio can be controlled by adjusting the range of applied voltages, air pressure, and relative humidity. Also, the NDR is sensitive to the the concentration of H2O2 added in the synthesis. The charge carrier injection through the trapping states, induced by the GOQD aggregation, could be responsible for the NDR behavior in GOQDs.

Photoelectronic memory based on nitride multiple quantum wells and the hybrid of graphene nanoflakes and a-IGZO film.

Optical memories are vitally important for the future development of high speed and low cost information technologies. Current optical memory devices still suffer from difficulties such as scaling-down of size, short-life expectancy, and non-volatility without the control of a gate electrode. To resolve these obstacles, a robust photoelectronic memory device is designed and demonstrated based on the integration of amorphous InGaZnO (a-IGZO), GNSs, and nitride multiple-quantum-wells light-emitting diode (MQWs LED). Utilizing the inherent nature of the band alignment between a-IGZO and graphene nanosheets (GNSs), electrons can transfer from a-IGZO to GNSs causing a persistent photoconductivity (PPC). With the long-lasting lifetime of PPC, the signal can be written optically and the encoded signal can be read both electrically and optically. The read and write processes reveal little current degradation for more than 10,000 sec, even repeated for more than hundred times. The device can convert invisible information to visible signal, and the encoded information can be simply erased under a reversed bias without a gate electrode. In addition, the memory device possesses a simple vertically stacked structure for 3D integration, and it is compatible with established technologies.

Electrically Pumped White-Light-Emitting Diodes Based on Histidine-Doped MoS2 Quantum Dots.

MoS2 quantum dots (QDs)-based white-light-emitting diodes (QD-WLEDs) are designed, fabricated, and demonstrated. The highly luminescent, histidine-doped MoS2 QDs synthesized by microwave induced fragmentation of 2D MoS2 nanoflakes possess a wide distribution of available electronic states as inferred from the pronounced excitation-wavelength-dependent emission properties. Notably, the histidine-doped MoS2 QDs show a very strong emission intensity, which exceeds seven times of magnitude larger than that of pristine MoS2 QDs. The strongly enhanced emission is mainly attributed to nitrogen acceptor bound excitons and passivation of defects by histidine-doping, which can enhance the radiative recombination drastically. The enabled electroluminescence (EL) spectra of the QD-WLEDs with the main peak around 500 nm are found to be consistent with the photoluminescence spectra of the histidine-doped MoS2 QDs. The enhanced intensity of EL spectra with the current increase shows the stability of histidine-doped MoS2 based QD-WLEDs. The typical EL spectrum of the novel QD-WLEDs has a Commission Internationale de l'Eclairage chromaticity coordinate of (0.30, 0.36) exhibiting an intrinsic broadband white-light emission. The unprecedented and low-toxicity QD-WLEDs based on a single light-emitting material can serve as an excellent alternative for using transition metal dichalcogenides QDs as next generation optoelectronic devices.

A Highly Stable Framework of Crystalline Zinc Phosphite with Selective Removal, Recovery, and Turn-On Sensing Abilities for Mercury Cations in Aqueous Solutions.

A highly stable framework of organic-inorganic hybrid zinc phosphite (NTOU-4) and its cobalt analogue (NTOU-4a) were synthesized under the hydro(solvo)thermal conditions and structurally characterized by single-crystal X-ray diffraction. Their frameworks consisted of inorganic metallophosphite chains, in which the metal atoms were interlinked through 1H-1,2,4-triazole-3,5-diamine and 1,4-benzenedicarboxylate linkers to form new crystalline materials. It is extremely difficult to achieve the consolidation of three distinct coordinations of metal-carboxylate, metal-triazolate, and metal-phosphite bonds into one crystal, resulting in the synthesis of the first mixed-ligand terephthalate-metallophosphite solids in the absence of organic molecules as templates or space-filling counters in their structures. Interestingly, the zinc compound not only exhibits high thermal stability (up to 400 °C in air) and chemical resistance to seawater, aqueous solutions (pH 3-11), and organic solvents at boiling conditions, but also shows selective removal, recovery, and "turn-on" sensing abilities of toxic mercury ions in aqueous solutions. Furthermore, the synthesis, characterization, and the difference of the framework stabilities between isostructural zinc and cobalt compounds are also reported.

p-GaN/n-ZnO nanorods: the use of graphene nanosheets composites to increase charge separation in self-powered visible-blind UV photodetectors.

ZnO-based heterojunctions have found applications as self-powered ultraviolet photodetectors (PDs). However, high doping levels are not compatible with high mobility for metallic doped ZnO-based PDs so further development has been inhibited. This study demonstrates a method to increase the open-circuit voltage (V oc) that allows keeping a sufficiently high level of mobility of ZnO, using a ZnO nanorod/GaN heterojunction that incorporates graphene nanosheets as the active layer. These hybrid PDs have triple the value for V oc of PDs that have only pure ZnO and better exhibit photo-response characteristics. The results of surface Kelvin probe microscopy and x-ray photoelectron spectrometer show that the complex defects that occur because Zn interstitials form a shallow donor in ZnO are mainly responsible for the increase in the value of V oc. Using this functional nanostructure as an active layer represents a new method for the manufacture of high-performance self-powered PDs.

Ultraviolet and visible random lasers assisted by diatom frustules.

Random laser actions in ultraviolet and visible regions have been demonstrated based on the composites consisting of bio-inspired diatom frustules. Owing to the low optical loss derived from porous network of diatom structures, we report wide spectrum range random lasers arising from GaN film and Rh6G dye via using biological diatoms as scattering centers. Interestingly, both ultraviolet and visible-range random laser actions with very sharp peaks can be easily obtained, with the average length of optics cavity closed to the average size of diatom frustules in both cases, indicating the excellent optical confinement of diatom frustules. It is expected that the first proof of concept shown here can pave an avenue toward future broad-range random lasers and eco-friendly biophotonics devices with high performance and wide spectrum response.

Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme.

In this work p-ZnO/n-GaN heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated n-ZnO films on InN/GaN/Si wafers were converted to p-type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our p-type ZnO film has a high carrier concentration of 3.73×10¹7 cm⁻³, a high mobility of 210 cm²/Vs, and a low resistivity of 0.079 Ωcm. As a result, the proposed p-ZnO/n-GaN heterojunction diode displays a well-behaving current rectification of a typical p-n junction, and the measured current versus voltage (I-V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of p-ZnO/n-GaN heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.

Local nanotip arrays sculptured by atomic force microscopy to enhance the light-output efficiency of GaN-based light-emitting diode structures.

In this work, local nanotip arrays on GaN-based light-emitting (LED) structures were fabricated through nano-oxidation using an atomic force microscope (AFM). The photoluminescence (PL) intensity of the InGaN/GaN multiple quantum wells (MQWs) active layer and the light extraction efficiency of the LED structure were enhanced by forming this nanotips structure to serve as a graded-refractive index layer, which is further validated by the finite-difference time-domain analysis. The PL emission peak of the MQWs active layer has a blue-shift phenomenon that is caused by a partial reduction of the strain on the InGaN well. It is expected that our approach opens a promising route for simultaneously enhancing both the internal quantum efficiency and the light extraction efficiency of GaN-based LEDs. The proposed AFM-based method will be of importance for local patterning the light emitting components for optoelectronic applications.

Speckle-Free, Angle-Free, Cavity-Free White Laser with a High Color Rendering Index.

The freedom from efficiency droop motivates monochromatic lasers to progress in general lighting applications due to the demand for more efficient and sustainable light sources. Still, a white light based on monochromatic lasers with high lighting quality, such as a high color rendering ability, an angle-independent output, and a speckle-free illumination, has not yet been fabricated nor demonstrated. Random lasers, with the special mechanism caused by multiple scattering, the angle-free emission, and the uncomplicated fabrication processes, inspire us to investigate the feasibility of utilizing them in general lighting. In this work, a white random laser with a high color rendering index (CRI) value, regardless of pumping energy and observing direction, was performed and discussed. We also investigated the stability of white RL as its CIE chromaticity coordinates exhibit negligible differences with increasing pump energy density, retaining its high-CRI measurement. Also, it exhibits angle-independent emission while having a high color rendering ability. After passing through a scattering film, it generated no speckles compared to the conventional laser. We demonstrated the advances in white laser illumination, showing that a white random laser is promising to be applied for high-brightness illumination, biological-friendly lighting, accurate color selections, and medical sensing.

Light-emitting devices with tunable color from ZnO nanorods grown on InGaN/GaN multiple quantum wells.

Based on the composite consisting of ZnO nanorods (NRs) grown on InGaN/GaN multiple quantum wells (MQWs), we have demonstrated a novel light-emitting device (LED) that has the capability to emit dual beam radiations. Interestingly, the relative intensity between the dual emissions is able to be manipulated by their polarizations. The underlying mechanism can be well understood in terms of the anisotropic optical properties arising from the geometric structures of constituent nanoscale materials. The results shown here may be extended to many other nanocomposite systems and pave a new pathway to create LEDs with tunable properties.

Deep and alignment free patterned etching of GaN surface using an atomic force microscope.

Successful deep and alignment-free patterned etching on GaN using atomic force microscope (AFM) local oxidation followed by in-situ chemical etching is demonstrated. Oxide ridges are grown on GaN on an AFM by applying positive sample bias at 80% humidity, with the oxidation reaction expedited by UV light. The oxide ridges are then etched by HCl solution, leaving troughs in the GaN surface. A dripping strategy for the in-situ chemical etching is recommended that allows deep, alignment-free multiple AFM oxidation/etching works on the GaN surface without any need of substrate removal from the AFM platform. Repeated etching followed by AFM oxidation on a spot on a GaN surface resulting in a hole as deep as 800 nm was also demonstrated. Further, a preliminary evaluation of the porosity of the AFM-grown oxide indicates that the oxide ridges grown on GaN at an AFM cantilever moving speed of 300 nm/s are porous in structure, with an estimated porosity of 86%, which porosity could be reduced if longer resident time of the AFM cantilever on the target oxidation region was used.

G-Protein-coupled Estrogen Receptor 1 Agonist G-1 Perturbs Sunitinib Resistance-related Phosphoproteomic Signatures in Renal Cell Carcinoma.

BACKGROUND: Metastatic renal cell carcinoma (RCC) often develops resistance to first-line targeted therapy such as sunitinib. G-Protein-coupled estrogen receptor 1 (GPER1) agonist G-1 was recently reported to regulate RCC physiology but the role of G-1 in RCC tumorigenesis and sunitinib resistance remains largely unknown. MATERIALS AND METHODS: Parental and sunitinib-resistant 786-O cells were treated with GPER1 agonist G-1, and quantitative phosphoproteomics was performed. Bioinformatic analyses and validations, including immunoblotting, cell migration, and cell cycle distribution, were performed. RESULTS: G-1 repressed cell proliferation and migration in both parental and sunitinib-resistant 786-O cells. Phosphoproteomic signatures, including phosphoinositide 3-kinase and protein kinase B (PI3K-AKT) as well as other pathways, were up-regulated in sunitinib-resistant cells but application of G-1 reversed this effect. Among phosphoprotein candidates, activating transcription factor 2 (ATF2) Thr69/71 phosphorylation was antagonistically regulated by sunitinib resistance and G-1. CONCLUSION: Our results open up the possibility for managing RCC and sunitinib resistance by GPER1 agonist G-1 and its regulated pathways.

The preparation of silver nanoparticle decorated silica nanowires on fused quartz as reusable versatile nanostructured surface-enhanced Raman scattering substrates.

We introduce a platform, comprised of silver nanoparticle decorated silica nanowires (SiONWs) dispersed on fused quartz substrates, for high sensitivity surface-enhanced Raman scattering (SERS) measurements using both frontal (through the analytes) and back-face (through the transparent substrate) excitation. Quasi-quantitative SERS performances on the specialized substrate, vis-à-vis a silver deposited bare fused quartz plate, showed: (i) the suitability of the Ag modified SiONW substrate for frontal as well as back-face excitation; (ii) a wider detection range with high sensitivity to Rhodamine 6G; and (iii) good underwater metal-oxide adhesion of the specialized substrates. Capable of surviving ultrasonic cleaning, the substrate introduced is one of the few reusable low-cost Ag-based nanostructured SERS substrates, requiring only a simple silver reload process (the silver mirror reaction).

Multifunctional Random-Laser Smart Inks.

With the superiority of laser-level intensity, narrow spectral line width, and broad-angular emission, random lasers (RLs) have drawn considerable research interests for their potential to carry out a variety of applications. In this work, the applications associated with optical-encoded technologies, including security printing, military friend or foe identification (FFI), and anticounterfeiting of documents are highlighted, and the concept of a transient RL "smart ink" has been proposed. The proof-of-concept was demonstrated as invisible signatures, which encoded the messages through the spectral difference of spontaneous emission and RL under specified conditions. Next, the possibility of encoding the data with multibit signals was further confirmed by exploiting the threshold tunability of RLs. Moreover, the transient characteristic of this smart ink and its capability to be attached on freeform surfaces of different materials were also shown. With the advantages of a facile manufacturing process and multiple purposes, it is expected that this ink can soon be carried out in a variety of practical utilities.