Highly intrinsic carrier mobility in tin diselenide crystal accessed with ultrafast terahertz spectroscopy.

Tin diselenide (SnSe2), a layered transition metal dichalcogenide (TMDC), stands out among other TMDCs for its extraordinary photoactive ability and low thermal conductivity. Consequently, it has stimulated many influential researches on photodetectors, ultrafast pulse shaping, thermoelectric devices, etc. However, the carrier mobility in SnSe2, as determined experimentally, remains limited to tens of cm2V-1s-1. This limitation poses a challenge for achieving high-performance SnSe2-based devices. Theoretical calculations, on the other hand, predict that the carrier mobility in SnSe2 can reach hundreds of cm2V-1s-1, approximately one order of magnitude higher than experimental value. Interestingly, the carrier mobility could be underestimated significantly in long-range transportation measurements due to the presence of defects and boundary scattering effects. To address this discrepancy, we employ optic pump terahertz probe spectroscopy to access the photoinduced dynamical THz photoconductivity of SnSe2. Our findings reveal that the intrinsic carrier mobility in conventional SnSe2 single crystal is remarkably high, reaching 353.2 ± 37.7 cm2V-1s-1, consistent with the theoretical prediction. Additionally, dynamical THz photoconductivity measurements reveal that the SnSe2 crystal containing rich defects efficiently capture photoinduced conduction-band electrons and valence-band holes with time constants of ∼20 and ∼200 ps, respectively. Meanwhile, we observe an impulsively stimulated Raman scattering at 0.60 THz. Our study not only demonstrates ultrafast THz spectroscopy as a reliable method for determining intrinsic carrier mobility and detection of low frequency coherent Raman mode in materials but also provides valuable reference for the future application of high-performance SnSe2-based devices.

Anomalous Nernst Effect Induced Terahertz Emission in a Single Ferromagnetic Film.

Despite its important role in understanding ultrafast spin dynamics and revealing novel spin/orbit effects, the mechanism of the terahertz (THz) emission from a single ferromagnetic nanofilm upon a femtosecond laser pump still remains elusive. Recent experiments have shown exotic symmetry, which is not expected from the routinely adopted mechanism of ultrafast demagnetization. Here, by developing a bidirectional pump-THz emission spectroscopy and associated symmetry analysis method, we set a benchmark for the experimental distinction of the THz emission induced by various mechanisms. Our results unambiguously unveil a new mechanism─anomalous Nernst effect (ANE) induced THz emission due to the ultrafast temperature gradient created by a femtosecond laser. Quantitative analysis shows that the THz emission exhibits interesting thickness dependence where different mechanisms dominate at different thickness ranges. Our work not only clarifies the origin of the ferromagnetic-based THz emission but also offers a fertile platform for investigating the ultrafast optomagnetism and THz spintronics.

Persistent Charging of CsPbBr3 Perovskite Nanocrystals Confined in Glass Matrix.

Manipulation of persistent charges in semiconductor nanostructure is the key point to obtain quantum bits towards the application of quantum memory and information devices. However, realizing persistent charge storage in semiconductor nano-systems is still very challenge due to the disturbance from crystal defects and environment conditions. Herein, the two-photon persistent charging induced long-lasting afterglow and charged exciton formation are observed in CsPbBr3 perovskite nanocrystals (NCs) confined in glass host with effective lifetime surpassing one second, where the glass inclosure provides effective protection. A method combining the femtosecond and second time-resolved transient absorption spectroscopy is explored to determine the persistent charging possibility of perovskite NCs unambiguously. Meanwhile, with temperature-dependent spectroscopy, the underlying mechanism of this persistent charging is elucidated. A two-channel carrier transfer model is proposed involving athermal quantum tunneling and slower thermal-assisted channel. On this basis, two different information storage devices are demonstrated with the memory time exceeding two hours under low-temperature condition. These results provide a new strategy to realize persistent charging in perovskite NCs and deepen the understanding of the underlying carrier kinetics, which may pave an alternative way towards novel information memory and optical data storage applications.

Tunable multifunctional polarization conversion in bilayer chiral metamaterials.

A chiral metamaterial composed of bilayer twisted split-ring resonators is proposed and demonstrated to realize tunable, dual-directional, and multifunctional polarization conversion for terahertz waves. Simulations show that the converter can selectively achieve linear-to-linear, linear-to-right-handed circular, or linear-to-left-handed circular polarization conversion by tuning the polarization and propagating direction of the incident waves. Stokes parameters, ellipticity, and a polarization rotation angle are introduced to determine the output polarization. The circular polarization transmission coefficients and surface current distribution are employed to demonstrate the physical mechanisms of the phenomena above. The proposed converter can find potential applications in terahertz imaging and communications.

A Nomogram Model for Evaluating the Risk of Lymph Node Metastasis in cT2-cT4N0M0 Gastric Cancer Population.

BACKGROUND Neoadjuvant chemotherapy is an important treatment for advanced gastric cancer, but it has been unclear whether neoadjuvant chemotherapy is closely related to lymph node metastasis. Therefore, based on the disease characteristics of the cT2-cT4N0M0 gastric cancer population, this study established a nomogram prediction model of lymph node metastasis risk in this gastric cancer population to help clinicians optimize clinical decision-making. MATERIAL AND METHODS We analyzed the data of 336 patients with advanced gastric cancer with CT imaging stage of cT2-cT4N0M0 admitted to the Third Department of the Fourth Hospital of Hebei Medical University from 2015 to 2021. Combined with the results of univariate and multivariate logistic regression analysis, 7 indicators were selected to establish a nomogram prediction model. The calibration curves, ROC curves, and decision curves were drawn against the nomogram model using R language. RESULTS The results showed that the AUC value of the model and the external validation data set were 0.925 and 0.911, respectively. The P value of the Hosmer-Lemeshow test for the internal validation dataset was 0.082, and the P value of Hosmer-Lemeshow test for the external validation dataset was 0.076.The decision curve results showed that when the threshold probability was 0.1-0.9, this model could benefit patients by predicting the risk of lymph node metastasis in patients with advanced gastric cancer, and formulating appropriate treatment schemes accordingly. CONCLUSIONS This nomogram has shown good discrimination and fit, and can also be combined with imaging examination to screen the populations suitable for neoadjuvant chemotherapy, avoid the risk of misdiagnosis of N staging to the greatest extent, and to assist clinicians to optimize clinical decision-making.

Lattice-induced strong coupling in symmetric and asymmetric split-ring metamaterial arrays.

The intrinsic link between surface plasmon modes (eigenmodes) and lattice modes in subwavelength periodic structures is investigated based on the split-ring metamaterial structure. The paper shows that the strong coupling between the eigenmodes and the lattice modes can be achieved by appropriately adjusting the period of the metamaterial structure, and the emergence of new, to the best of our knowledge, modes at low frequencies is observed, resulting in a lower spectral loss of a single hybrid resonance and an increase in its Q factor up to 110. In addition, an asymmetric double-split-ring structure is proposed, and the Fano resonance is excited, giving rise to a spectral line with three resonance valleys. The coupled harmonic-oscillator model is used to interpret the underlying coupling mechanism in lattice-induced transparent systems, which agrees well with our simulation results. This strong-coupling scheme between the lattice and the mixed modes of the metamaterial unit provides a new avenue to modulate lattice-induced transparency, high-Q resonance, and strong-field confinement, which may find applications in the design of ultrasensitive sensors, slow-light devices, as well as multiple frequency absorbers and other fields.

Observation of Negative Terahertz Photoconductivity in Large Area Type-II Dirac Semimetal PtTe_{2}.

As a newly emergent type-II Dirac semimetal, platinum telluride (PtTe_{2}) stands out from other two dimensional noble-transition-metal dichalcogenides for the unique band structure and novel physical properties, and has been studied extensively. However, the ultrafast response of low energy quasiparticle excitation in terahertz frequency remains nearly unexplored yet. Herein, we employ optical pump-terahertz probe (OPTP) spectroscopy to systematically study the photocarrier dynamics of PtTe_{2} thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the terahertz photoconductivity (PC) of PtTe_{2} films shows abrupt increase initially, while the terahertz PC changes into negative value in a subpicosecond timescale, followed by a prolonged recovery process that lasted a few nanoseconds. The magnitude of both positive and negative terahertz PC response shows strongly pump fluence dependence. We assign the unusual negative terahertz PC to the formation of small polaron due to the strong electron-phonon (e-ph) coupling, which is further substantiated by temperature and film thickness dependent measurements. Moreover, our investigations give a subpicosecond timescale of simultaneous carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-II Dirac semimetal upon photoexcitation, which is of crucial importance for designing PtTe_{2}-based optoelectronic devices.

Optically controlled ultrafast terahertz switching in wafer scale PtSe2 thin films.

In this study, we have reported a newly ultrafast optically modulated terahertz (THz) switch based on the transition metal dichalcogenide (TMD) material platinum diselenide (${{\rm PtSe}_2}$) with different thicknesses. The high-quality ${{\rm PtSe}_2}$ thin films with centimeter scale are fabricated on sapphire substrate by the chemical vapor deposition method. The optical pump and THz probe (OPTP) spectroscopy reveals that the THz response of the thin films is as fast as ${\sim} 2.0 \; {\rm ps}$ after photoexcitation of a 780 nm pulse. Interestingly, we found that the THz response time of the ${{\rm PtSe}_2}$ semimetal phase is faster than that of the semiconducting phase. In addition, the THz response time becomes faster when increasing the film thickness for the semimetal phase ${{\rm PtSe}_2}$, while for the semiconducting phase, the response time becomes slower with film thickness. Moreover, degenerate optical pump and optical probe spectroscopy (OPOP) demonstrated that the ultrafast photoinduced negative absorption (photoinduced bleaching) occurs after photoexcitation of 780 nm, and the subsequent recovery consists of two relaxation processes: the fast component with more than 85% of weight has a lifetime of ${\sim}{1.5}\;{\rm ps}$ for semiconducting-phase films and less than 1 ps for the semimetal phase, similar to the response time obtained from OPTP measurement. The slow component with less than 15% of weight has a lifetime of a few hundred picoseconds. The subpicosecond response time observed in both OPTP and OPOP is ascribed to the carrier trapping by defect states, and the slow relaxation process appearing in OPOP arises from the defect state relevant relaxation that is insensitive to the THz photoconductivity due to the frozen carrier mobility in defect states. Our experimental results demonstrate a new application of TMD materials such as ${{\rm PtSe}_2}$ in THz technology, for instance, the design and fabrication of THz modulators and THz switches.

Influence of doping for InSb on ultrafast carrier dynamics measured by time-resolved terahertz spectroscopy.

The influence of doping on the ultrafast carrier dynamics in InSb has been studied by time-resolved terahertz spectroscopy with photogenerated carrier densities from 1.5×1018 to 9.5×1019cm-3 at 800 nm. The photoinduced absorption and carrier recovery process show doping type dependence. The carrier recovery time of intrinsic InSb is greater than that of p-doped InSb but less than that of n-doped InSb at low carrier densities. At high carrier densities, compared with intrinsic InSb, the doped InSb is more prone to transient Auger recombination, which indicates that the appearance of the fast decay process depends on the carrier densities. The photoinduced absorption of terahertz probe pulse of n-doped InSb is significantly less than that of p-doped and intrinsic InSb; however, that of p-doped InSb is close to that of intrinsic InSb, which demonstrates that the high concentration of electrons can accelerate the efficiency of transient Auger recombination. Our analysis provides assistance to the design, manufacture, and improvement of photovoltaic detectors.

Dynamic Modeling of Weld Bead Geometry Features in Thick Plate GMAW Based on Machine Vision and Learning.

Weld bead geometry features (WBGFs) such as the bead width, height, area, and center of gravity are the common factors for weighing welding quality control. The effective modeling of these WBGFs contributes to implementing timely decision making of welding process parameters to improve welding quality and enhance automatic levels. In this work, a dynamic modeling method of WBGFs is presented based on machine vision and learning in multipass gas metal arc welding (GMAW) with typical joints. A laser vision sensing system is used to detect weld seam profiles (WSPs) during the GMAW process. A novel WSP extraction method is proposed using scale-invariant feature transform and machine learning. The feature points of the extracted WSP, namely the boundary points of the weld beads, are identified with slope mutation detection and number supervision. In order to stabilize the modeling process, a fault detection and diagnosis method is implemented with cubic exponential smoothing, and the diagnostic accuracy is within 1.50 pixels. A linear interpolation method is presented to implement sub pixel discrimination of the weld bead before modeling WBGFs. With the effective feature points and the extracted WSP, a scheme of modeling the area, center of gravity, and all-position width and height of the weld bead is presented. Experimental results show that the proposed method in this work adapts to the variable features of the weld beads in thick plate GMAW with T-joints and butt/lap joints. This work can provide more evidence to control the weld formation in a thick plate GMAW in real time.

Optically controlled ultrafast terahertz switching in a CdTe nanostructure thin film.

The speed of optical modulation on a terahertz (THz) pulse is mainly dominated by the optical response of the photocarrier. In order to achieve ultrafast THz modulation, the effective method is to reduce the lifetime of the photocarrier by introducing defects that can trap the photocarriers efficiently. In this paper, we reported the ultrafast optical modulation of THz switching in a 10 nm CdTe nanostructure film. After photoexcitation at 800/400 nm, the THz response of the film is extremely fast with a lifetime of ${\sim}{1.3}\;{\rm ps}$∼1.3ps. Further, the ultrafast transient THz transmission shows almost temperature independence down to 100 K. On the other hand, the transient absorption spectroscopy reveals that the lifetime of photocarriers in CdTe nanostructure film lasts as long as several ns. The 1.3 ps THz photoconductivity response is due to the substantial decrease of photocarrier mobility in a CdTe nanostructure, which comes from the increase of the photocarrier scattering between the photocarrier and the surface states of CdTe nanostructural film. Our experimental results provide a new method to design optically driven ultrafast THz response devices, such as THz switch and THz modulator.

Pump fluence dependence of ultrafast carrier dynamics in InSb measured by optical pump-terahertz probe spectroscopy.

Ultrafast carrier dynamics in intrinsic and n-doped InSb crystals were studied by time-resolved terahertz spectroscopy using an optical pump-terahertz probe setup with pump fluence from 32 µJ/cm2 to 1910 µJ/cm2. With photoexcitation at 800 nm, the ultrafast photoinduced absorption and carrier recovery process of intrinsic and n-doped InSb showed strong pump fluence dependence. It was found that the magnitude of photoinduced absorption first increased and then decreased with pump fluence. The carrier recovery process could be well fitted with a single exponential curve at low pump fluence, but could be well fitted with a biexponential curve at high pump fluence when a fast photocarrier relaxation appeared. The magnitude of photoinduced absorption increased gradually at low pump fluence due to the increase of the carrier at the bottom of the conduction band by impact ionization. The magnitude of photoinduced absorption decreased gradually at high pump fluence, possibly due to the efficiency of transient Auger recombination greater than the rate of carriers generated in the impact ionization process. The fast decay process appearing at high pump fluence was thought to be dominated by transient Auger recombination.

Switchable metamaterial for enhancing and localizing electromagnetic field at terahertz band.

In this article, a novel metamaterial is designed aimed at generating a single electromagnetic hot spot, in order to realize the localization of the incident electromagnetic field at terahertz band, and this kind of metastructure is an ideal candidate for many research fields such as spintronics, nonlinear magnetic response, near-field optics, and optical antenna, etc. The specially tailored metamaterial takes the shape of diabolo with a metal triangle pair connected by a cubic gallium arsenide (GaAs) gap. We demonstrated by simulation that both electric- and magnetic-field of incident THz pulse can be confined in the small GaAs gap when a synchronized femtosecond laser pulse is illuminated. The numerical simulation results show that 2 orders of magnitude of field enhancement can be obtained for a 1-by-1 µm GaAs gap, and the field enhancement factor can also be further improved by tailoring the GaAs gap down to nanometer scale.

Photoinduced terahertz radiation and negative conductivity dynamics in Heusler alloy Co2MnSn film.

We report the broadband terahertz (THz) radiation in ferromagnetic half-metallic Heusler alloy Co2MnSn thin film upon the irradiation of a femtosecond laser pulse at room temperature. The magnetic-, sample symmetry-, and pump fluence-dependent THz emission reveals that the THz radiation is originated from the magnetic-dipole radiation, i.e., the light-induced subpicosecond demagnetization. In addition, by optical pump-THz probe spectroscopy, we found that the photoexcited increase of the scattering rate of hot carriers thereby leads to the photoinduced negative THz conductivity in Co2MnSn thin film.

Terahertz broadband modulation in a biased BiFeO3/Si heterojunction.

A new terahertz (THz) modulator based on bias-driven carrier conductivity change in a heterojunction was proposed. BiFeO3 film and silicon were selected as building blocks for fabricating the THz modulator. THz nonlinear transmission as a function of bias voltage was studied systematically. THz peak transmission as a function of bias shows a similar tendency as the current-voltage response of the heterojunction: the forward bias leads to the exponential enhancement of THz transmission, and in contrast, the reverse bias shows no observable changes in THz transmission. The modulation depth and modulation bandwidth of THz pulse can reach up to 42% and 1.0 THz with forward bias of 4.8 V, respectively. The observed bias dependent THz transmission in the BFO/Si heterojunction is well-interpreted by the proposed model: the diffused carriers across the heterojunction are localized in BFO thin film with applied forward bias. Our finding provides great potential for applications in designing all electrical broadband THz modulators.

Generation of individually modulated femtosecond pulse string by multilayer volume holographic gratings.

A scheme to generate individually modulated femtosecond pulse string by multilayer volume holographic grating (MVHG) is proposed. Based on Kogelnik's coupled-wave theory and matrix optics, temporal and spectral expressions of diffracted field are given when a femtosecond pulse is diffracted by a MVHG. It is shown that the number of diffracted sub-pulses in the pulse string equals to the number of grating layers of the MVHG, peak intensity and duration of each diffracted sub-pulse depend on thickness of the corresponding grating layer, whereas pulse interval between adjacent sub-pulses is related to thickness of the corresponding buffer layer. Thus by modulating parameters of the MVHG, individually modulated femtosecond pulse string can be acquired. Based on Bragg selectivity of the volume grating and phase shift provided by the buffer layers, we give an explanation on these phenomena. The result is useful to design MVHG-based devices employed in optical communications, pulse shaping and processing.

Periodical energy oscillation and pulse splitting in sinusoidal volume holographic grating.

This paper presents dynamical diffraction properties of a femtosecond pulse in a sinusoidal volume holographic grating (VHG). By the modified coupled-wave equations of Kogelnik, we show that the diffraction of a femtosecond pulse on the VHG gives rise to periodical energy oscillation and pulse splitting. In the initial stage of diffraction, one diffracted pulse and one transmitted pulse emerge, and energy of the transmitted pulse periodically transfers to the diffracted pulse and vice versa. In the latter stage, both the diffracted and transmitted pulses split into two spatially separated pulses. One pair of transmitted and diffracted pulses propagates in the same direction and forms the output diffracted dual pulses of the VHG, and the other pair of pulses forms the output transmitted dual pulses. The pulse interval between each pair of dual pulses is in linearly proportional to the refractive index modulation and grating thickness. By the interference effect and group velocity difference we give explanations on the periodical energy oscillation and pulse splitting respectively.

Forced rotation of nanograting in glass by pulse-front tilted femtosecond laser direct writing.

Femtosecond pulse laser with tilted intensity front demonstrates the capability of rotating the writing of nanograting in glass in 3D space. Other than the light polarization, this phenomenon is also associated with the quill-writing effect, which depends on the correlation between the sample movement and the pulse front tilt. This is because a pondermotive force, perpendicular to the tilted intensity plane, can push the excited electron plasma forward towards the pulse front. This behavior further tilts the electrical field plane and eventually result in a forced rotation of nanograting in 3D space.

Terahertz Biosensor Engineering Based on Quasi-BIC Metasurface with Ultrasensitive Detection.

Terahertz (THz) sensors have attracted great attention in the biological field due to their nondestructive and contact-free biochemical samples. Recently, the concept of a quasi-bound state in the continuum (QBIC) has gained significant attention in designing biosensors with ultrahigh sensitivity. QBIC-based metasurfaces (MSs) achieve excellent performance in various applications, including sensing, optical switching, and laser, providing a reliable platform for biomaterial sensors with terahertz radiation. In this study, a structure-engineered THz MS consisting of a "double C" array has been designed, in which an asymmetry parameter α is introduced into the structure by changing the length of one subunit; the Q-factor of the QBIC device can be optimized by engineering the asymmetry parameter α. Theoretical calculation with coupling equations can well reproduce the THz transmission spectra of the designed THz QBIC MS obtained from the numerical simulation. Experimentally, we adopt an MS with α = 0.44 for testing arginine molecules. The experimental results show that different concentrations of arginine molecules lead to significant transmission changes near QBIC resonant frequencies, and the amplitude change is shown to be 16 times higher than that of the classical dipole resonance. The direct limit of detection for arginine molecules on the QBIC MS reaches 0.36 ng/mL. This work provides a new way to realize rapid, accurate, and nondestructive sensing of trace molecules and has potential application in biomaterial detection.

Charge Transfer in Graphene-MoS2 Vertical Heterostructures Tuned by Stacking Order and Substrate-Introduced Electric Field.

Vertical van der Waals heterostructures composed of graphene (Gr) and transition metal dichalcogenides (TMDs) have created a fascinating platform for exploring optical and electronic properties in the two-dimensional limit. Numerous studies have focused on Gr/TMDs heterostructures to elucidate the underlying mechanisms of charge-energy transfer, quasiparticle formation, and relaxation following optical excitation. Nevertheless, a comprehensive understanding of interfacial charge separation and subsequent dynamics in graphene-based heterostructures remains elusive. Here, we have investigated the carrier dynamics of Gr-MoS2 heterostructures (including Gr/MoS2 and MoS2/Gr stacking sequences) grown on a fused silica substrate under varying photoexcitation energies by comprehensive ultrafast means, including time-resolved terahertz (THz) spectroscopy, THz emission spectroscopy, and transient absorption spectroscopy. Our findings highlight the impact of the substrate electric field on the efficiency of modulating the interfacial charge transfer (CT). Specifically, the optical excitation in Gr/MoS2 generates thermal electron injection from the graphene layer into the MoS2 layer with photon energy well below A-exciton of MoS2, whereas the interfacial CT in the MoS2/Gr is blocked by the electric field of the substrate. In turn, photoexcitation of the A exciton above leads to hole transfer from MoS2 to graphene, which occurs for both Gr-MoS2 heterostructures with opposite stacking orders, resulting in the opposite orientations of the interfacial photocurrent, as directly demonstrated by the out-of-phase THz emission. Moreover, we demonstrate that the recombination time of interfacial exciton is approximately ∼18 ps, whereas the defect-assisted interfacial recombination occurs on a time scale of ∼ns. This study provides valuable insights into the interplay between interfacial CT, substrate effects, and defect engineering in Gr-TMDs heterostructures, thereby facilitating the development of next-generation optoelectronic devices.