RESUMEN
In this paper, the detection of the lunar surface soil permittivity with megahertz electromagnetic (EM) waves by spaceborne radar is studied based on the EM scattering theory, the Boltzmann-Shukla equations, and the improved scattering matrix method (ISMM). The reflection characteristics of the lunar surface soil subject to megahertz waves are analyzed through the EM scattering theory and expressed by the lunar surface soil permittivity. Then, the lunar ionosphere is assumed to be composed of dusty plasma, and its EM characteristics are described with the Boltzmann-Shukla equations. Finally, the transmission and reflection characteristics of the propagation of EM waves in the lunar ionosphere are numerically calculated with ISMM. Thus, the complex permittivity of lunar surface soil is obtained. In addition, the effects of detection environment situations, such as the lunar illumination intensity, characteristics of the lunar dust and dust charging process in the lunar ionosphere, on the amplitude and phase of EM waves are also investigated in this study. The simulation results show that an EM wave at a high frequency induces a strong effective wave with a stable phase shift and a significantly small interferential wave. Moreover, the lunar illumination is more effective under EM waves in low frequency bands; the characteristics of the lunar dust have a notable influence on the transmission and absorption coefficients of the effective waves. These conclusions help in real applications involving the detection of the lunar surface soil permittivity by spaceborne radar in various lunar environments.
RESUMEN
Antimony selenide (${\text{Sb}_2}{\text{Se}_3}$Sb2Se3) is an emerging material with potential applications in photovoltaics, while magnetron sputtering is an important method in material growth. In this study, ${\text{Sb}_2}{\text{Se}_3}$Sb2Se3 thin films, prepared by the magnetron sputtering technique with varied working pressures and sputtering powers, were fabricated into solar cells with a structure of $\text{glass}/\text{ITO}/\text{CdS}/{\text{Sb}_2}{\text{Se}_3}/\text{Au}$glass/ITO/CdS/Sb2Se3/Au. The current density versus voltage measurements and x-ray diffraction were introduced to compare the photovoltaic and structural properties of the cell samples. Characterization and identification of the defects in ${\text{Sb}_2}{\text{Se}_3}$Sb2Se3 thin films were investigated by admittance measurements. The ${\text{Sb}_2}{\text{Se}_3}$Sb2Se3 cell samples prepared with appropriate sputtering power (about 60 W) or working pressure (about 0.4 Pa) were found to own better crystal qualities and lower defect densities, which may be the reason for better efficiency.
RESUMEN
Silicon (Si) is the most important semiconductor material broadly used in both electronics and optoelectronics. However, the performance of Si-based room temperature detectors is far below the requirements for direct detection in the terahertz (THz) band, a very promising electromagnetic band for the next-generation technology. Here, we report a high sensitivity of room temperature THz photodetector utilizing the electromagnetic induced well mechanism with an SOI-based structure for easy integration. The detector achieves a responsivity of 122 kV W-1, noise equivalent power (NEP) of 0.16 pW Hz-1/2, and a fast response of 1.29 µs at room temperature. The acquired NEP of the detector is â¼2 orders lower in magnitude than that of other types of Si-based detectors. Our results pave the way to realize Si-based THz focal plane arrays, which can be used in a wide range of applications, such as medical diagnosis, remote sensing, and security inspection.