Phase-Dependent Phonon Heat Transport in Nanoscale Gallium Oxide Thin Films.

Different phases of Ga2O3 have been regarded as superior platforms for making new-generation high-performance electronic devices. However, understanding of thermal transport in different phases of nanoscale Ga2O3 thin-films remains challenging, owing to the lack of phonon transport models and systematic experimental investigations. Here, thermal conductivity (TC) and thermal boundary conductance (TBC) of the ( 1 ¯ 010 ) $( {\bar 1010} )$ α-, ( 2 ¯ 01 ) $( {\bar 201} )\;$ ß-, and (001) κ-Ga2O3 thin films on sapphire are investigated. At ≈80 nm, the measured TC of α (8.8 W m-1 K-1) is ≈1.8 times and ≈3.0 times larger than that of ß and κ, respectively, consistent with model based on density functional theory (DFT), whereas the model reveals a similar TC for the bulk α- and ß-Ga2O3. The observed phase- and size-dependence of TC is discussed thoroughly with phonon transport properties such as phonon mean free path and group velocity. The measured TBC at Ga2O3/sapphire interface is analyzed with diffuse mismatch model using DFT-derived full phonon dispersion relation. Phonon spectral distribution of density of states, transmission coefficients, and group velocity are studied to understand the phase-dependence of TBC. This study provides insight into the fundamental phonon transport mechanism in Ga2O3 thin films and paves the way for improved thermal management of high-power Ga2O3-based devices.

Polydimethylsiloxane (PDMS)-assisted non-destructive transient thermoreflectance characterizations.

The conventional pump-probe thermoreflectance (pump-probe TR) techniques are routinely performed on a thin (typically <100 nm) metal transducer deposited on samples, ensuring the most fundamental principle of thermoreflectance: the reflectance change (∆R/R) of the sample surface is directly and linearly related to the temperature change (∆T) within a finite temperature range. However, general metal coating methods may damage the sample by forming a mixed layer with the sample. In this article, we present a non-destructive pump-probe transient thermoreflectance (TTR) characterization using the polydimethylsiloxane (PDMS)-assisted metal transfer technique. Our method utilizes PDMS dry transfer to transfer common transducer metals (Au and Al) to the target substrate. This method effectively avoids impurities and damage to the sample. In particular, we have utilized Au as a transition layer to study the application of Al transfer in TTR measurements. The substrate thermal conductivity measurement results show that they can all be used for TTR measurement, and the thermal boundary conductance results show that the transferred metals have low bonding to the substrate. In addition, Al/Au can be transferred over a large area at room temperature compared to Au. After measurement, the samples can be restored to their original state by a simple cleaning method. This method provides a simple and reliable way to characterize samples without metal coating for TTR.

Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC.

Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding. However, the interlayer of the bonding interface and the reduced layer thickness may affect thermal transport. In this study, the temperature-dependent cross-plane thermal conductivity of 4H-SiC thin films and the effective thermal boundary resistance (TBReff) of the bonding SiC-on-SiC are measured by the multiple-probe wavelength nanosecond transient thermoreflectance (MW-TTR). The measured temperature-dependent cross-plane thermal conductivity of the 4H-SiC thin film exhibits good quantitative agreement with calculation by density functional theory (DFT) including higher-order four-phonon (4ph) scattering, especially at high temperatures (>400 K). The theoretical calculations indicate the non-negligible importance of 4ph scattering in 4H-SiC high-temperature applications, due to the significantly increasing 4ph scattering rate at increasing temperature and strong temperature dependence of 4ph scattering. The measured nonzero but small TBReff (2.33 + 0.43/-1.15 m2 K/GW) at the SiC-SiC interface is analyzed with molecular dynamics (MD) simulation, indicating that a strong bonding interface with an extremely thin interlayer is formed by the SAB process. Two-dimensional finite element simulations of the experimental equivalent structures are further investigated, and the significant effects (at least 19 °C) of TBReff on the maximum temperature (Tmax) are confirmed. This study provides insight into the fundamental phonon transport and interface thermal transport mechanism in SAB SiC-on-SiC and paves the way for improved 4H-SiC efficient device manufacturing and thermal management.