Observation of the orbital Hall effect in a light metal Ti.

The orbital Hall effect1 refers to the generation of electron orbital angular momentum flow transverse to an external electric field. Contrary to the common belief that the orbital angular momentum is quenched in solids, theoretical studies2,3 predict that the orbital Hall effect can be strong and is a fundamental origin of the spin Hall effect4-7 in many transition metals. Despite the growing circumstantial evidence8-11, its direct detection remains elusive. Here we report the magneto-optical observation of the orbital Hall effect in the light metal titanium (Ti). The Kerr rotation by the orbital magnetic moment accumulated at Ti surfaces owing to the orbital Hall current is measured, and the result agrees with theoretical calculations semi-quantitatively and is supported by the orbital torque12 measurement in Ti-based magnetic heterostructures. This result confirms the orbital Hall effect and indicates that the orbital angular momentum is an important dynamic degree of freedom in solids. Moreover, this calls for renewed studies of the orbital effect on other degrees of freedom such as spin2,3,13,14, valley15,16, phonon17-19 and magnon20,21 dynamics.

Phase-coherent transport in trigonal gallium nitride nanowires.

Gallium nitride nanowires (GaN NWs) with triangular cross-section exhibit universal conductance fluctuations (UCF) originating from the quantum interference of electron wave functions in the NWs. The amplitude of UCF is inversely proportional to the applied bias current. The bias dependence of UCF, combined with temperature dependence of the resistance suggests that phase coherent transport dominates over normal transport in GaN NWs. A unique temperature dependence of phase-coherent length and fluctuation amplitude is associated with inelastic electron-electron scattering in NWs. The phase-coherence length extracted from the UCF is as large as 400 nm at 1.8 K, and gradually decreases as temperature increases up to 60 K.

Exploitable Magnetic Anisotropy of the Two-Dimensional Magnet CrI3.

Magnetic anisotropy often plays a central role in various static and dynamic properties of magnetic materials. In particular, for two-dimensional (2D) van der Waals materials, as inferred from the Mermin-Wagner theorem, it is an essential prerequisite for stabilizing ferromagnetic order. In this work, we carry out first-principles calculations for a CrI3 monolayer and investigate how its magnetic anisotropy is interrelated to adjustable parameters governing the underlying electronic structure. We explore various routes for controlled manipulation of magnetic anisotropy: chemical adsorption, substitutional doping, optical excitation, and charge transfer through a heterostructure. In particular, the vertical stacking of CrI3 and graphene is noteworthy in regard to controlling magnetic anisotropy: the spin anisotropy axis is switchable between the out-of-plane and in-plane directions, which is accompanied by a variation in the anisotropy energy of up to 500%. Our results show the possibility that dynamic control of the anisotropy of the 2D magnet CrI3 may enable the development of an advanced spintronic device with enhanced energy efficiency and high operation speed.

Controlling the Magnetic Anisotropy of the van der Waals Ferromagnet Fe3GeTe2 through Hole Doping.

Identifying material parameters affecting properties of ferromagnets is key to optimized materials that are better suited for spintronics. Magnetic anisotropy is of particular importance in van der Waals magnets, since it not only influences magnetic and spin transport properties, but also is essential to stabilizing magnetic order in the two-dimensional limit. Here, we report that hole doping effectively modulates the magnetic anisotropy of a van der Waals ferromagnet and explore the physical origin of this effect. Fe3-xGeTe2 nanoflakes show a significant suppression of the magnetic anisotropy with hole doping. Electronic structure measurements and calculations reveal that the chemical potential shift associated with hole doping is responsible for the reduced magnetic anisotropy by decreasing the energy gain from the spin-orbit induced band splitting. Our findings provide an understanding of the intricate connection between electronic structures and magnetic properties in two-dimensional magnets and propose a method to engineer magnetic properties through doping.

Nonlocal Spin Diffusion Driven by Giant Spin Hall Effect at Oxide Heterointerfaces.

A two-dimensional electron gas emerged at a LaAlO3/SrTiO3 interface is an ideal system for "spin-orbitronics" as the structure itself strongly couple the spin and orbital degree of freedom through the Rashba spin-orbit interaction. One of core experiments toward this direction is the nonlocal spin transport measurement, which has remained elusive due to the low spin injection efficiency to this system. Here we bypass the problem by generating a spin current not through the spin injection from outside but instead through the inherent spin Hall effect and demonstrate the nonlocal spin transport. The analysis on the nonlocal spin voltage, confirmed by the signature of a Larmor spin precession and its length dependence, displays that both D'yakonov-Perel' and Elliott-Yafet mechanisms involve in the spin relaxation at low temperature. Our results show that the oxide heterointerface is highly efficient in spin-charge conversion with exceptionally strong spin Hall coefficient γ ∼ 0.15 ± 0.05 and could be an outstanding platform for the study of coupled charge and spin transport phenomena and their electronic applications.

Emergence of Huge Negative Spin-Transfer Torque in Atomically Thin Co layers.

Current-induced domain wall motion has drawn great attention in recent decades as the key operational principle of emerging magnetic memory devices. As the major driving force of the motion, the spin-orbit torque on chiral domain walls has been proposed and is currently extensively studied. However, we demonstrate here that there exists another driving force, which is larger than the spin-orbit torque in atomically thin Co films. Moreover, the direction of the present force is found to be the opposite of the prediction of the standard spin-transfer torque, resulting in the domain wall motion along the current direction. The symmetry of the force and its peculiar dependence on the domain wall structure suggest that the present force is, most likely, attributed to considerable enhancement of a negative nonadiabatic spin-transfer torque in ultranarrow domain walls. Careful measurements of the giant magnetoresistance manifest a negative spin polarization in the atomically thin Co films which might be responsible for the negative spin-transfer torque.

All-Electrical Measurement of Interfacial Dzyaloshinskii-Moriya Interaction Using Collective Spin-Wave Dynamics.

Dzyaloshinskii-Moriya interaction (DMI), which arises from the broken inversion symmetry and spin-orbit coupling, is of prime interest as it leads to a stabilization of chiral magnetic order and provides an efficient manipulation of magnetic nanostructures. Here, we report all-electrical measurement of DMI using propagating spin wave spectroscopy based on the collective spin wave with a well-defined wave vector. We observe a substantial frequency shift of spin waves depending on the spin chirality in Pt/Co/MgO structures. After subtracting the contribution from other sources to the frequency shift, it is possible to quantify the DMI energy in Pt/Co/MgO systems. The result reveals that the DMI in Pt/Co/MgO originates from the interfaces, and the sign of DMI corresponds to the inversion asymmetry of the film structures. The electrical excitation and detection of spin waves and the influence of interfacial DMI on the collective spin-wave dynamics will pave the way to the emerging field of spin-wave logic devices.

Voltage tuning of thermal spin current in ferromagnetic tunnel contacts to semiconductors.

Spin currents are paramount to manipulate the magnetization of ferromagnetic elements in spin-based memory, logic and microwave devices, and to induce spin polarization in non-magnetic materials. A unique approach to create spin currents employs thermal gradients and heat flow. Here we demonstrate that a thermal spin current can be tuned conveniently by a voltage. In magnetic tunnel contacts to semiconductors (silicon and germanium), it is shown that a modest voltage (~200 mV) changes the thermal spin current induced by Seebeck spin tunnelling by a factor of five, because it modifies the relevant tunnelling states and thereby the spin-dependent thermoelectric parameters. The magnitude and direction of the spin current is also modulated by combining electrical and thermal spin currents with equal or opposite sign. The results demonstrate that spin-dependent thermoelectric properties away from the Fermi energy are accessible, and open the way towards tailoring thermal spin currents and torques by voltage, rather than material design.

Sign Reversal of Spin-Transfer Torques.

Spin-transfer torque (STT) and spin-orbit torque (SOT) form the core of spintronics, allowing for the control of magnetization through electric currents. While the sign of SOT can be manipulated through material and structural engineering, it is conventionally understood that STT lacks a degree of freedom in its sign. However, this study presents the first demonstration of manipulating the STT sign by engineering heavy metals adjacent to magnetic materials in magnetic heterostructures. Spin torques are quantified through magnetic domain-wall speed measurements, and subsequently, both STT and SOT are systematically extracted from these measurements. The results unequivocally show that the sign of STT can be either positive or negative, depending on the materials adjacent to the magnetic layers. Specifically, Pd/Co/Pd films exhibit positive STT, while Pt/Co/Pt films manifest negative STT. First-principle calculations further confirm that the sign reversal of STT originates from the sign reversal of spin polarization of conduction electrons.

Distinct universality classes of domain wall roughness in two-dimensional Pt/Co/Pt films.

We demonstrate here that the current-driven domain wall (DW) in two dimensions forms a "facet" roughness, distinctive to the conventional self-affine roughness induced by a magnetic field. Despite the different universality classes of these roughnesses, both the current- and field-driven DW speed follow the same creep law only with opposite angular dependences. Such angular dependences result in a stable facet angle, from which a single DW image can unambiguously quantify the spin-transfer torque efficiency, an essential parameter in DW-mediated nanodevices.

Fabrication of nano-sized magnetic tunnel junctions using lift-off process assisted by atomic force probe tip.

We present a fabrication method for nano-scale magnetic tunnel junctions (MTJs), employing e-beam lithography and lift-off process assisted by the probe tip of atomic force microscope (AFM). It is challenging to fabricate nano-sized MTJs on small substrates because it is difficult to use chemical mechanical planarization (CMP) process. The AFM-assisted lift-off process enables us to fabricate nano-sized MTJs on small substrates (12.5 mm x 12.5 mm) without CMP process. The e-beam patterning has been done using bi-layer resist, the poly methyl methacrylate (PMMA)/ hydrogen silsesquioxane (HSQ). The PMMA/HSQ resist patterns are used for both the etch mask for ion milling and the self-aligned mask for top contact formation after passivation. The self-aligned mask buried inside a passivation oxide layer, is readily lifted-off by the force exerted by the probe tip. The nano-MTJs (160 nm x 90 nm) fabricated by this method show clear current-induced magnetization switching with a reasonable TMR and critical switching current density.

Exchange-induced electron transport in heavily phosphorus-doped si nanowires.

Heavily phosphorus-doped silicon nanowires (Si NWs) show intriguing transport phenomena at low temperature. As we decrease the temperature, the resistivity of the Si NWs initially decreases, like metals, and starts to increase logarithmically below a resistivity minimum temperature (T(min)), which is accompanied by (i) a zero-bias dip in the differential conductance and (ii) anisotropic negative magnetoresistance (MR), depending on the angle between the applied magnetic field and current flow. These results are associated with the impurity band conduction and electron scattering by the localized spins at phosphorus donor states. The analysis on the MR reveals that the localized spins are coupled antiferromagnetically at low temperature via the exchange interaction.

Oscillatory spin-polarized tunnelling from silicon quantum wells controlled by electric field.

Spin-dependent electronic transport is widely used to probe and manipulate magnetic materials and develop spin-based devices. Spin-polarized tunnelling, successful in ferromagnetic metal junctions, was recently used to inject and detect electron spins in organics and bulk GaAs or Si. Electric field control of spin precession was studied in III-V semiconductors relying on spin-orbit interaction, which makes this approach inefficient for Si, the mainstream semiconductor. Methods to control spin other than through precession are thus desired. Here we demonstrate electrostatic modification of the magnitude of spin polarization in a silicon quantum well, and detection thereof by means of tunnelling to a ferromagnet, producing prominent oscillations of tunnel magnetoresistance of up to 8%. The electric modification of the spin polarization relies on discrete states in the Si with a Zeeman spin splitting, an approach that is also applicable to organic, carbon-based and other materials with weak spin-orbit interaction.

A scalable molecule-based magnetic thin film for spin-thermoelectric energy conversion.

Spin thermoelectrics, an emerging thermoelectric technology, offers energy harvesting from waste heat with potential advantages of scalability and energy conversion efficiency, thanks to orthogonal paths for heat and charge flow. However, magnetic insulators previously used for spin thermoelectrics pose challenges for scale-up due to high temperature processing and difficulty in large-area deposition. Here, we introduce a molecule-based magnetic film for spin thermoelectric applications because it entails versatile synthetic routes in addition to weak spin-lattice interaction and low thermal conductivity. Thin films of CrII[CrIII(CN)6], Prussian blue analogue, electrochemically deposited on Cr electrodes at room temperature show effective spin thermoelectricity. Moreover, the ferromagnetic resonance studies exhibit an extremely low Gilbert damping constant ~(2.4 ± 0.67) × 10-4, indicating low loss of heat-generated magnons. The demonstrated STE applications of a new class of magnet will pave the way for versatile recycling of ubiquitous waste heat.

Effects of Interfacial Oxidization on Magnetic Damping and Spin-Orbit Torques.

We investigate the effects of interfacial oxidation on the perpendicular magnetic anisotropy, magnetic damping, and spin-orbit torques in heavy-metal (Pt)/ferromagnet (Co or NiFe)/capping (MgO/Ta, HfOx, or TaN) structures. At room temperature, the capping materials influence the effective surface magnetic anisotropy energy density, which is associated with the formation of interfacial magnetic oxides. The magnetic damping parameter of Co is considerably influenced by the capping material (especially MgO) while that of NiFe is not. This is possibly due to extra magnetic damping via spin-pumping process across the Co/CoO interface and incoherent magnon generation (spin fluctuation) developed in the antiferromagnetic CoO. It is also observed that both antidamping and field-like spin-orbit torque efficiencies vary with the capping material in the thickness ranges we examined. Our results reveal the crucial role of interfacial oxides on the perpendicular magnetic anisotropy, magnetic damping, and spin-orbit torques.

Orbital torque in magnetic bilayers.

The orbital Hall effect describes the generation of the orbital current flowing in a perpendicular direction to an external electric field, analogous to the spin Hall effect. As the orbital current carries the angular momentum as the spin current does, injection of the orbital current into a ferromagnet can result in torque on the magnetization, which provides a way to detect the orbital Hall effect. With this motivation, we examine the current-induced spin-orbit torques in various ferromagnet/heavy metal bilayers by theory and experiment. Analysis of the magnetic torque reveals the presence of the contribution from the orbital Hall effect in the heavy metal, which competes with the contribution from the spin Hall effect. In particular, we find that the net torque in Ni/Ta bilayers is opposite in sign to the spin Hall theory prediction but instead consistent with the orbital Hall theory, which unambiguously confirms the orbital torque generated by the orbital Hall effect. Our finding opens a possibility of utilizing the orbital current for spintronic device applications, and it will invigorate researches on spin-orbit-coupled phenomena based on orbital engineering.

Optical spin-orbit torque in heavy metal-ferromagnet heterostructures.

Spin current generation through the spin-orbit interaction in non-magnetic materials lies at the heart of spintronics. When the generated spin current is injected to a ferromagnet, it produces spin-orbit torque and manipulates magnetization efficiently. Optically generated spin currents are expected to be superior to their electrical counterparts in terms of the manipulation speed. Here we report optical spin-orbit torques in heavy metal/ferromagnet heterostructures. The strong spin-orbit coupling of heavy metals induces photo-excited carriers to be spin-polarized, and their transport from heavy metals to ferromagnets induces a torque on magnetization. Our results demonstrate that heavy metals can generate spin-orbit torque not only electrically but also optically.

Molecular Tunability of Magnetic Exchange Bias and Asymmetrical Magnetotransport in Metalloporphyrin/Co Hybrid Bilayers.

Individual molecular spins are promising quantum states for emerging computation technologies. The "on surface" configuration of molecules in proximity to a magnetic film allows control over the orientations of molecular spins and coupling between them. The stacking of planar molecular spins could favor antiferromagnetic interlayer couplings and lead to pinning of the magnetic underlayer via the exchange bias, which is extensively utilized in ultrafast and high-density spintronics. However, fundamental understanding of the molecular exchange bias and its operating features on a device has not been unveiled. Here, we showed tunable molecular exchange bias and its asymmetrical magnetotransport characteristics on a device by using the metalloporphyrin/cobalt hybrid films. A series of the distinctive molecular layers showcased a wide range of the interfacial exchange coupling and bias. The transport behaviors of the hybrid bilayer films revealed the molecular exchange bias effect on a fabricated device, representing asymmetric characteristics on anisotropic and angle-dependent magnetoresistances. Theoretical simulations demonstrated close correlations among the interfacial distance, magnetic interaction, and exchange bias. This study of the hybrid interfacial coupling and its impact on magnetic and magnetotransport behaviors will extend functionalities of molecular spinterfaces for emerging information technologies.

Gate-tunable giant nonreciprocal charge transport in noncentrosymmetric oxide interfaces.

A polar conductor, where inversion symmetry is broken, may exhibit directional propagation of itinerant electrons, i.e., the rightward and leftward currents differ from each other, when time-reversal symmetry is also broken. This potential rectification effect was shown to be very weak due to the fact that the kinetic energy is much higher than the energies associated with symmetry breaking, producing weak perturbations. Here we demonstrate the appearance of giant nonreciprocal charge transport in the conductive oxide interface, LaAlO3/SrTiO3, where the electrons are confined to two-dimensions with low Fermi energy. In addition, the Rashba spin-orbit interaction correlated with the sub-band hierarchy of this system enables a strongly tunable nonreciprocal response by applying a gate voltage. The observed behavior of directional response in LaAlO3/SrTiO3 is associated with comparable energy scales among kinetic energy, spin-orbit interaction, and magnetic field, which inspires a promising route to enhance nonreciprocal response and its functionalities in spin orbitronics.

Spin-orbit torques associated with ferrimagnetic order in Pt/GdFeCo/MgO layers.

We investigate spin orbit torque (SOT) efficiencies and magnetic properties of Pt/GdFeCo/MgO multilayers by varying the thicknesses of GdFeCo and MgO layers. Our studies indicate that the ferrimagnetism in the GdFeCo alloy is considerably influenced by both thicknesses due to the diffusion of Gd atoms toward the MgO layer. Comparing to conventional Pt/ferromagnet/MgO structures, the Pt/GdFeCo/MgO exhibits a lower efficiency of SOTs associated with ferrimagnetic order and a similar magnitude of magnetic damping. The previous models that have been developed for rigid ferromagnets are inappropriate to analyze our experimental data, leading to an unphysical consequence of spin transmission larger than unity. Our results imply that the heavy-metal/ferrimagnet system is quite different from heavy-metal/ferromagnet systems in terms of magnetic dynamical modes, spin angular momentum transfer, and relaxation processes.