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1.
Proc Natl Acad Sci U S A ; 121(11): e2304360121, 2024 Mar 12.
Artículo en Inglés | MEDLINE | ID: mdl-38457517

RESUMEN

The interplay of charge, spin, lattice, and orbital degrees of freedom in correlated materials often leads to rich and exotic properties. Recent studies have brought new perspectives to bosonic collective excitations in correlated materials. For example, inelastic neutron scattering experiments revealed non-trivial band topology for magnons and spin-orbit excitons (SOEs) in a quantum magnet CoTiO3 (CTO). Here, we report phonon properties resulting from a combination of strong spin-orbit coupling, large crystal field splitting, and trigonal distortion in CTO. Specifically, the interaction between SOEs and phonons endows chirality to two [Formula: see text] phonon modes and leads to large phonon magnetic moments observed in magneto-Raman spectra. The remarkably strong magneto-phononic effect originates from the hybridization of SOEs and phonons due to their close energy proximity. While chiral phonons have been associated with electronic topology in some materials, our work suggests opportunities may arise by exploring chiral phonons coupled to topological bosons.

2.
ACS Omega ; 9(26): 27963-27968, 2024 Jul 02.
Artículo en Inglés | MEDLINE | ID: mdl-38973841

RESUMEN

ß-Crystalline phase gallium oxide (ß-Ga2O3) is an ultrawide bandgap material with prospective applications in electronics and deep ultraviolet (DUV) optoelectronics and optics. The monoclinic crystal structure of ß-Ga2O3 results in optical anisotropy to incident light with different polarization states. This attribute can lead to different optical applications in the DUV. In this article, we investigated the optical properties of ß-Ga2O3 thin films grown by pulsed laser deposition technique on sapphire substrates with different crystallographic orientations. Marked in-plane polarization anisotropy, determined by reflectance and Raman spectroscopy, was observed for ß-Ga2O3 films deposited on an r-cut sapphire substrate. In contrast, isotropic optical properties were observed in ß-Ga2O3 films deposited on a c-cut sapphire substrate.

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