Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide.

The field-effect electron mobility of aqueous solution-processed indium gallium oxide (IGO) thin-film transistors (TFTs) is significantly enhanced by polyvinyl alcohol (PVA) addition to the precursor solution, a >70-fold increase to 7.9 cm2/Vs. To understand the origin of this remarkable phenomenon, microstructure, electronic structure, and charge transport of IGO:PVA film are investigated by a battery of experimental and theoretical techniques, including In K-edge and Ga K-edge extended X-ray absorption fine structure (EXAFS); resonant soft X-ray scattering (R-SoXS); ultraviolet photoelectron spectroscopy (UPS); Fourier transform-infrared (FT-IR) spectroscopy; time-of-flight secondary-ion mass spectrometry (ToF-SIMS); composition-/processing-dependent TFT properties; high-resolution solid-state 1H, 71Ga, and 115In NMR spectroscopy; and discrete Fourier transform (DFT) analysis with ab initio molecular dynamics (MD) liquid-quench simulations. The 71Ga{1H} rotational-echo double-resonance (REDOR) NMR and other data indicate that PVA achieves optimal H doping with a Ga···H distance of ∼3.4 Å and conversion from six- to four-coordinate Ga, which together suppress deep trap defect localization. This reduces metal-oxide polyhedral distortion, thereby increasing the electron mobility. Hydroxyl polymer doping thus offers a pathway for efficient H doping in green solvent-processed metal oxide films and the promise of high-performance, ultra-stable metal oxide semiconductor electronics with simple binary compositions.

Structure and Properties of Cs7(H4PO4)(H2PO4)8: A New Superprotonic Solid Acid Featuring the Unusual Polycation (H4PO4).

We report the discovery of a new superprotonic compound, Cs7(H4PO4)(H2PO4)8, or CPP, which forms at elevated temperatures from the reaction of CsH2PO4 and CsH5(PO4)2. The structure, solved using high-temperature single-crystal X-ray diffraction and confirmed by high-temperature 31P NMR spectroscopy, crystallizes in space group Pm3̅n and has a lattice constant of 20.1994(9) Å at 130 °C. The unit cell resembles a 4 × 4 × 4 superstructure of superprotonic CsH2PO4, but features an extraordinary chemical moiety, rotationally disordered H4PO4+ cations, which periodically occupy one of every eight cation sites. The influence of this remarkable cation on the structure, thermodynamics, and proton transport properties of the CPP phase is discussed. Notably, CPP forms at a temperature of 90 °C, much lower than the superprotonic transition temperature of 228 °C of CsH2PO4, and the compound does not appear to have an ordered, low-temperature form. Under nominally dry conditions, the material is stable against dehydration to ∼151 °C, and this results in a particularly wide region of stability of a superprotonic material in the absence of active humidification. The conductivity of Cs7(H4PO4)(H2PO4)8 is moderate, 5.8 × 10-4 S cm-1 at 140 °C, but appears nevertheless facilitated by polyanion (H2PO4-) group reorientation.

Frequency-Agile Low-Temperature Solution-Processed Alumina Dielectrics for Inorganic and Organic Electronics Enhanced by Fluoride Doping.

The frequency-dependent capacitance of low-temperature solution-processed metal oxide (MO) dielectrics typically yields unreliable and unstable thin-film transistor (TFT) performance metrics, which hinders the development of next-generation roll-to-roll MO electronics and obscures intercomparisons between processing methodologies. Here, capacitance values stable over a wide frequency range are achieved in low-temperature combustion-synthesized aluminum oxide (AlOx) dielectric films by fluoride doping. For an optimal F incorporation of ∼3.7 atomic % F, the F:AlOx film capacitance of 166 ± 11 nF/cm2 is stable over a 10-1-104 Hz frequency range, far more stable than that of neat AlOx films (capacitance = 336 ± 201 nF/cm2) which falls from 781 ± 85 nF/cm2 to 104 ± 4 nF/cm2 over this frequency range. Importantly, both n-type/inorganic and p-type/organic TFTs exhibit reliable electrical characteristics with minimum hysteresis when employing the F:AlOx dielectric with ∼3.7 atomic % F. Systematic characterization of film microstructural/compositional and electronic/dielectric properties by X-ray photoelectron spectroscopy, time-of-fight secondary ion mass spectrometry, cross-section transmission electron microscopy, solid-state nuclear magnetic resonance, and UV-vis absorption spectroscopy reveal that fluoride doping generates AlOF, which strongly reduces the mobile hydrogen content, suppressing polarization mechanisms at low frequencies. Thus, this work provides a broadly applicable anion doping strategy for the realization of high-performance solution-processed metal oxide dielectrics for both organic and inorganic electronics applications.

Charge-clustering induced fast ion conduction in 2LiX-GaF3: A strategy for electrolyte design.

2LiX-GaF3 (X = Cl, Br, I) electrolytes offer favorable features for solid-state batteries: mechanical pliability and high conductivities. However, understanding the origin of fast ion transport in 2LiX-GaF3 has been challenging. The ionic conductivity order of 2LiCl-GaF3 (3.20 mS/cm) > 2LiBr-GaF3 (0.84 mS/cm) > 2LiI-GaF3 (0.03 mS/cm) contradicts binary LiCl (10-12 S/cm) < LiBr (10-10 S/cm) < LiI (10-7 S/cm). Using multinuclear 7Li, 71Ga, 19F solid-state nuclear magnetic resonance and density functional theory simulations, we found that Ga(F,X)n polyanions boost Li+-ion transport by weakening Li+-X- interactions via charge clustering. In 2LiBr-GaF3 and 2LiI-GaF3, Ga-X coordination is reduced with decreased F participation, compared to 2LiCl-GaF3. These insights will inform electrolyte design based on charge clustering, applicable to various ion conductors. This strategy could prove effective for producing highly conductive multivalent cation conductors such as Ca2+ and Mg2+, as charge clustering of carboxylates in proteins is found to decrease their binding to Ca2+ and Mg2+.

Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition.

Organic-inorganic hybrid perovskites have shown tremendous potential for optoelectronic applications. Ion migration within the crystal and across heterointerfaces, however, imposed severe problems with material degradation and performance loss in devices. Encapsulating hybrid perovskite with a thin physical barrier can be essential for suppressing the undesirable interfacial reactions without inhibiting the desirable transport of charge carriers. Here, we demonstrated that nanoscale, pinhole-free Al2O3 layer can be coated directly on the perovskite CH3NH3PbI3 using atomic layer deposition (ALD). The success can be attributed to a multitude of strategies including surface molecular modification and hybrid ALD processing combining the thermal and plasma-enhanced modes. The Al2O3 films provided remarkable protection to the underlying perovskite films, surviving by hours in solvents without noticeable decays in either structural or optical properties. The results advanced the understanding of applying ALD directly on hybrid perovskite and provided new opportunities to implement stable and high-performance devices based on the perovskites.

Multifunctional Electrolyte Additive Stabilizes Electrode-Electrolyte Interface Layers for High-Voltage Lithium Metal Batteries.

A lithium metal anode and high nickel ternary cathode are considered viable candidates for high energy density lithium metal batteries (LMBs). However, unstable electrode-electrolyte interfaces and structure degradation of high nickel ternary cathode materials lead to serious capacity decay, consequently hindering their practical applications in LMBs. Herein, we introduced N,O-bis(trimethylsilyl) trifluoro acetamide (BTA) as a multifunctional additive for removing trace water and hydrofluoric acid (HF) from the electrolyte and inhibiting corrosive HF from disrupting the electrode-electrolyte interface layers. Furthermore, the BTA additive containing multiple functional groups (C-F, Si-O, Si-N, and C═N) promotes the formation of LiF-rich, Si- and N-containing solid electrolyte interfacial films on a lithium metal anode and LiNi0.8Mn0.1Co0.1O2 (NMC811) cathode surfaces, thereby improving the electrode-electrolytes interfacial stability and mitigating the capacity decay caused by structural degradation of the layered cathode. Using the BTA additive had tremendous benefits through modification of both anode and cathode surface layers. This was demonstrated using a Li||NMC811 metal battery with the BTA electrolyte, which exhibits remarkable cycling and rate performances (122.9 mA h g-1 at 10 C) and delivers a discharge capacity of 162 mA h g-1 after 100 cycles at 45 °C. Likewise, this study establishes a cost-effective approach of using a single additive to improve the electrochemical performance of LMBs.