New directions in the analysis of buried interfaces for device technology by hard X-ray photoemission.

Photoelectron spectroscopy is a characterization technique which plays a key role in device technology, a field requiring, very often, a reliable and reproducible analysis of buried, critical interfaces. The recent advent of laboratory hard X-ray spectrometers opens new perspectives toward routine studies of technologically-relevant samples for the qualification of processes and materials. In this review, the status of hard X-ray photoelectron spectroscopy (HAXPES) implemented with chromium Kα excitation (5.414 keV) and applied to technological research in nanoelectronics is presented. After an account of the role of synchrotron HAXPES and the specific effects to care about at the practical level, different aspects are developed, first for illustrating the benefits of the technique through specific application cases in the field of resistive memories and power transistors. Then, we provide a status update on quantification in HAXPES, both from core-level intensities and inelastic background analysis. Finally, we present preliminary results in a novel analytical field, operando HAXPES, where a prototypical device is operated in situ during the laboratory HAXPES experiment, opening up the possibility of unravelling the mechanisms occurring at buried interfaces and governing device operation.

Measuring the lifetime of silicon nanocrystal solar cell photo-carriers by using Kelvin probe force microscopy and x-ray photoelectron spectroscopy.

We report the first measurements of photo-carrier lifetimes in silicon nanocrystal-based third generation solar cells by Kelvin force microscopy and x-ray photoelectron spectroscopy under modulated frequency light illumination. A high concentration of active defects at the interface between the nanocrystals and silicon oxide matrix may be passivated by annealing under hydrogen. We found that the carrier lifetime, τ, is τ = 7 × 10(-5) s and τ = 3.5 × 10(-5) s within 10% accuracy for the hydrogen passivated and non-passivated nanocrystals, respectively. We used an exponential model to confirm the experimental potential measurements and to estimate photo-carrier lifetimes.

Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns.

An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy filtering, we have obtained a spectroscopic image series at the Si 2p core level and across the valence band. Local band alignments are extracted, accounting for doping, band bending and surface photovoltage.

Aspects of lateral resolution in energy-filtered core level photoelectron emission microscopy.

Lateral resolution is a major issue in photoelectron emission microscopy (PEEM) and received much attention in the past; however a reliable practical methodology allowing for inter-laboratory comparisons is still lacking. In modern, energy-filtered instruments, core level or valence electrons give much lower signal levels than secondary electrons used in still most of the present experiments. A quantitative measurement of the practical resolution obtained with core level electrons is needed. Here, we report on critical measurements of the practical lateral resolution measured for certified semiconducting test patterns using core level photoelectrons imaged with synchrotron radiation and an x-ray PEEM instrument with an aberration-corrected energy filter. The resolution is 250 ± 20 nm and the sensitivity, 38 nm. The different contributions to the effective lateral resolution (electron optics, sample surface imperfections, counting statistics) are presented and quantitatively discussed.

Orientation-dependent work function of in situ annealed strontium titanate.

We have used energy-filtered x-ray photoelectron emission microscopy (XPEEM) and synchrotron radiation to measure the grain orientation dependence of the work function of a sintered niobium-doped strontium titanate ceramic. A significant spread in work function values is found. Grain orientation and surface reducing/oxidizing conditions are the main factors in determining the work function. Energy-filtered XPEEM looks ideally suited for analysis of other technologically interesting polycrystalline samples.

Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories.

We report the chemical phenomena involved in the reverse forming (negative bias on top electrode) and reset of a TaN/TiTe/Al2O3/Ta memory stack. Hard X-ray photoelectron spectroscopy was used to conduct a non-destructive investigation of the critical interfaces between the electrolyte (Al2O3) and the TiTe top and Ta bottom electrodes. During reverse forming, Te accumulates at the TiTe/Al2O3 interface, the TiOx layer between the electrolyte and the electrode is reduced and the TaOx at the interface with Al2O3 is oxidized. These interfacial redox processes are related to an oxygen drift toward the bottom electrode under applied bias, which may favour Te transport into the electrolyte. Thus, the forming processes is related to both Te release and also to the probable migration of oxygen vacancies inside the alumina layer. The opposite phenomena are observed during the reset. TiOx is oxidized near Al2O3 and TaOx is reduced at the Al2O3/Ta interface, following the O2- drift towards the top electrode under positive bias while Te is driven back into the TiTe electrode.

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions.

Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

Spectroscopic XPEEM of highly conductive SI-doped GaN wires.

Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10(21) at cm(-3) is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires.

Direct quantification of gold along a single Si nanowire.

The presence of gold on the sidewall of a tapered, single silicon nanowire is directly quantified from core-level nanospectra using energy-filtered photoelectron emission microscopy. The uniform island-type partial coverage of gold determined as 0.42+/-0.06 (approximately 1.8 ML) is in quantitative agreement with the diameter reduction of the gold catalyst observed by scanning electron microscopy and is confirmed by a splitting of the photothresholds collected from the sidewall, from which characteristic local work functions are extracted using a model of the full secondary electron distributions.

Synthesis and evaluation of the CNS activity of new 4-alkoxyphenylimidazolidin-2-ones.

Various 4-alkoxyphenylimidazolidin-2-ones were prepared from benzaldehydes via a Curtius rearrangement and were evaluated for their anticonvulsant activities.