RESUMEN
Non-layered transition metal carbides (TMCs) and layered transition metal dichalcogenides (TMDs) are two well-studied material families that have individually received considerable attention over the past century. In recent years, with the shift towards two-dimensional materials and heterostructures, a field has emerged that is focused on the structure and properties of TMC/TMD heterostructures, which through chemical conversion exhibit diverse types of heterostructure configuration that host coupled 2D-3D interfaces, giving rise to exotic properties. In this Review, we highlight experimental and computational efforts to understand the routes to fabricate TMC/TMD heterostructures. Furthermore, we showcase how controlling these heterostructures can lead to emergent electronic transport, optical properties and improved catalytic properties.
RESUMEN
The selective adsorption of target acid gas molecules from binary gas mixtures by porous aromatic frameworks (PAFs) with two identical functional groups per aromatic ring (PAF-R2) was computationally investigated using grand canonical Monte Carlo simulations. PAF-R2 adsorption was considered for three binary mixtures of small molecular concentrations of acid gas and abundant nitrogen gas (CO2/N2, SO2/N2, and H2S/N2). The results indicate that additional functional groups enhance acid gas loadings and selectivity, compared with pristine PAF and single-functionalized PAFs. Low pressures yield linearly increasing gas loadings and constant selectivity, while high pressures yield much higher adsorption and selectivity. In particular, SO2 loading and selectivity under high pressures are heavily influenced by the PAF's maximum adsorption limit, which can be linked back to the functional groups and their configuration. In summary, PAF-(3,5)-(COOH)2 (nomenclature of PAFs is provided in the Appendix in the Supporting Information) and many other PAF with the same two electron-withdrawing groups are predicted to have great acid gas adsorption and selectivity from gas mixtures, while PAF-(3,5)-(OH)2 (one of PAFs with two identical electron-donating groups) is predicted to have good adsorption and selectivity, especially under elevated pressures. The results of this work can provide insights into various types of PAFs with great selective adsorption ability and their corresponding conditions. The simulation procedures and results may inspire the exploration and screening of other types of PAFs or porous materials, for acid gas absorption.
RESUMEN
GaSe is an important member of the post-transition-metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single-crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates by using molecular beam epitaxy. It yields smooth thin GaSe films with a rare γ'-polymorph. We analyze the formation mechanism of γ'-GaSe using density-functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of γ'-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/three-dimensional (3D) quasi-van der Waals epitaxial growth.
RESUMEN
We employ analytical transmission electron microscopy (TEM) to correlate the structural and chemical environment variations within a stacked epitaxial thin film of the high entropy oxide (HEO) Mg0.2Co0.2Ni0.2Cu0.2Zn0.2O (J14), with two layers grown at different substrate temperatures (500 and 200 °C) using pulsed laser deposition (PLD). Electron diffraction and atomically resolved STEM imaging reveal the difference in out-of-plane lattice parameters in the stacked thin film, which is further quantified on a larger scale using four-dimensional STEM (4D-STEM). In the layer deposited at a lower temperature, electron energy loss spectroscopy (EELS) mapping indicates drastic changes in the oxidation states and bonding environment for Co ions, and energy-dispersive X-ray spectroscopy (EDX) mapping detects more significant cation deficiency. Ab initio density functional theory (DFT) calculations validate that vacancies on the cation sublattice of J14 result in significant electronic and structural changes. The experimental and computational analyses indicate that low temperatures during film growth result in cation deficiency, an altered chemical environment, and reduced lattice parameters while maintaining a single phase. Our results demonstrate that the complex correlation of configurational entropy, kinetics, and thermodynamics can be utilized for accessing a range of metastable configurations in HEO materials without altering cation proportions, enabling further engineering of functional properties of HEO materials.