RESUMEN
Pyroptosis has been proved to significantly influence the development of lung squamous cell carcinoma (LUSC). To better predict overall survival (OS) and provide guidance on the selection of therapy for LUSC patients, we constructed a novel prognostic biomarker based on pyroptosis-related genes. The dataset for model construction were obtained from The Cancer Genome Atlas and the validation dataset were obtained from Gene Expression Omnibus. Differential expression genes between different pyroptosis expression patterns were identified. These genes were then used to construct pyroptosis expression pattern score (PEPScore) through weighted gene co-expression network analysis, univariate and multivariate cox regression analysis. Afterward, the differences in molecule and immune characteristics and the effect of different therapies were explored between the subgroups divided by the model. The PEPScore was constructed based on six pyroptosis-related genes (CSF2, FGA, AKAP12, CYP2C18, IRS4, TSLP). Compared with the high-PEPScore subgroup, the low-PEPScore subgroup had significantly better OS, higher TP53 and TTN mutation rate, higher infiltration of T follicular helper cells and CD8 T cells, and may benefit more from chemotherapeutic drugs, immunotherapy and radiotherapy. PEPScore is a prospective prognostic model to differentiate prognosis, molecular and immune microenvironmental features, as well as provide significant guidance for selecting clinical therapies.
RESUMEN
A stretchable and mechanical robust field-effect transistor is essential for soft wearable electronics. To realize stretchable transistors, elastic dielectrics with small current hysteresis, high elasticity, and high dielectric constants are the critical factor for low-voltage-driven devices. Here, we demonstrate the polar elastomer consisting of poly(vinylidene fluoride-hexafluoropropylene) (PVDF-HFP):poly(4-vinylphenol) (PVP). Owing to the high dielectric constant of PVDF-HFP, the device can be operated under less than 5 V and shows a linear-regime hole mobility as high as 0.199 cm2 V-1 s-1 without significant current hysteresis. Specifically, the PVDF-HFP:PVP blends induce the vertical phase separation and significantly reduce current leakage and reduce the crystallization of PVDF segments, which can contribute current hysteresis in the OFET characteristics. All-stretchable OFETs based on these PVDF-HFP:PVP dielectrics were fabricated. The device can still keep the hole mobility of approximately 0.1 cm2/(V s) under a low operation voltage of 3 V even as stretched with 80% strain. Finally, we successfully fabricate a low-voltage-driven stretchable transistor. The low voltage operating under strains is the desirable characteristics for soft and comfortable wearable electronics.