Ultimate Limit in Optoelectronic Performances of Monolayer WSe2 Sloping-Channel Transistors.

Atomically thin monolayer two-dimensional (2D) semiconductors with natural immunity to short channel effects are promising candidates for sub-10 nm very large-scale integration technologies. Herein, the ultimate limit in optoelectronic performances of monolayer WSe2 field-effect transistors (FETs) is examined by constructing a sloping channel down to 6 nm. Using a simple scaling method compatible with current micro/nanofabrication technologies, we achieve a record high saturation current up to 1.3 mA/µm at room temperature, surpassing any reported monolayer 2D semiconductor transistors. Meanwhile, quasi-ballistic transport in WSe2 FETs is first demonstrated; the extracted high saturation velocity of 4.2 × 106 cm/s makes it suitable for extremely sensitive photodetectors. Furthermore, the photoresponse speed can be improved by reducing channel length due to an electric field-assisted detrapping process of photogenerated carriers in localized states. As a result, the sloping-channel device exhibits a faster response, higher detectivity, and additional polarization resolution ability compared to planar micrometer-scale devices.

Strain Releasing of Flexible 2D Electronics through van der Waals Sliding Contact.

Two-dimensional (2D) materials have demonstrated promising potential for flexible electronics, owning to their atomic thin body thickness and dangling-bond-free surface. Here, we report a sliding contact device structure for efficient strain releasing. By fabricating a weakly coupled metal-2D junction with a van der Waals (vdW) gap in between, the applied strain could be effectively released through their interface sliding; hence minimized strain is transferred to the 2D lattice. Therefore, we observed stable device behavior with electrodes stretching over 110%, much higher than 2D devices using evaporated metal contacts. Furthermore, through multicycle straining-releasing measurements, we found the electrodes still form intimate contact with nearly constant contact resistance during sliding, confirming the optimization of device flexibility and electrical properties at the same time. Finally, we demonstrate this vdW sliding contact is a general device geometry and could be well-extended to various 2D or 3D bulk materials, leading to devices with much higher strain tolerance.

Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope.

Ultrathin two-dimensional (2D) semiconductors are regarded as a potential channel material for low-power transistors with small subthreshold swing and low leakage current. However, their dangling bond­free surface makes it extremely difficult to deposit gate dielectrics with high-quality interface in metal-oxide-semiconductor (MOS) field-effect transistors (FETs). Here, we demonstrate a low-temperature process to transfer metal gate to 2D MoS2 for high-quality interface. By excluding extrinsic doping to MoS2 and increasing contact distance, the high­barrier height Pt-MoS2 Schottky junction replaces the commonly used MOS capacitor and eliminates the use of gate dielectrics. The MoS2 transferred metal gate (TMG) FETs exhibit sub-1 V operation voltage and a subthreshold slope close to thermal limit (60 mV/dec), owing to intrinsically high junction capacitance and the high-quality interface. The TMG and back gate enable logic functions in a single transistor with small footprint.

Branched CdO/ZnO Core/Shell Heterogeneous Structure and Its Enhanced Photoelectrocatalytic Performance.

Branched nanostructures of semiconductors based on one-dimensional heterostructures have many promising applications in optoelectronics, supercapacitors, photocatalysts, etc. Here, we report a novel branched core/shell CdO/ZnO hetero-nanostructure that resembles a Crimson bottlebrush (Callistemon Citrinus) but with intriguing hexagonal symmetry. The nanomaterials were fabricated via an improved one-step chemical vapor deposition method and consist of a CdO wire as the core and ZnO as the shell. With cadmium acting as a catalyst, ZnO nanowires grow as perpendicular branches from the CdO/ZnO one-dimensional core/shell structure. The nanostructures were characterized with X-ray diffraction scanning and transmission electron microscopy. A homogeneous epitaxial growth mechanism has been postulated for the formation of the nanostructure. The materials show a broad and strong absorption ranging from visible to ultraviolet and a better photoelectrocatalytic properties in comparison to pure ZnO or CdO. Our synthetic strategy may open up a new way for controlled preparation of one-dimensional nanomaterials with core/shell heterostructure, which could find potential applications in solar cells and opto-electrochemical water-splitting devices.