Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector.

Chowdhury, Arun Malla; Chandan, Greeshma; Pant, Rohit; Roul, Basanta; Singh, Deependra Kumar; Nanda, K K; Krupanidhi, S B

Chowdhury, Arun Malla; Chandan, Greeshma; Pant, Rohit; Roul, Basanta; Singh, Deependra Kumar; Nanda, K K; Krupanidhi, S B.

Afiliación

Chowdhury AM; Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India.
Chandan G; Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India.
Pant R; Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India.
Roul B; Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India.
Singh DK; Central Research Laboratory , Bharat Electronics , Bangalore 560013 , India.
Nanda KK; Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India.
Krupanidhi SB; Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India.

ACS Appl Mater Interfaces ; 11(10): 10418-10425, 2019 Mar 13.

Article en En | MEDLINE | ID: mdl-30786709

Palabras clave

S−I−S heterojunction; broad band detectors; indium gallium nitride; molecular beam epitaxy (MBE); self-powered detectors

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article País de afiliación: India

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