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Polarity Tunable Trionic Electroluminescence in Monolayer WSe2.
Wang, Junyong; Lin, Fanrong; Verzhbitskiy, Ivan; Watanabe, Kenji; Taniguchi, Takashi; Martin, Jens; Eda, Goki.
Afiliación
  • Wang J; Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542.
  • Lin F; Centre for Advanced 2D Materials , National University of Singapore , 6 Science Drive 2 , Singapore 117546.
  • Verzhbitskiy I; Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542.
  • Watanabe K; Centre for Advanced 2D Materials , National University of Singapore , 6 Science Drive 2 , Singapore 117546.
  • Taniguchi T; Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542.
  • Martin J; Centre for Advanced 2D Materials , National University of Singapore , 6 Science Drive 2 , Singapore 117546.
  • Eda G; National Institute for Material Science , 1-1 Namiki , Tsukuba 305-0044 , Japan.
Nano Lett ; 19(10): 7470-7475, 2019 10 09.
Article en En | MEDLINE | ID: mdl-31517494
ABSTRACT
Monolayer WSe2 exhibits luminescence arising from various types of exciton complexes due to strong many-body effects. Here, we demonstrate selective electrical excitation of positive and negative trions in van der Waals metal-insulator-semiconductor (MIS) heterostructure consisting of few-layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer WSe2. Intentional unbalanced injection of electrons and holes is achieved via field-emission tunneling and electrostatic accumulation. The device exhibits planar electroluminescence from either positive trion X+ or negative trion X- depending on the bias conditions. We show that hBN serves as a tunneling barrier material allowing selective injection of electron or holes into WSe2 from FLG layer. Our observation offers prospects for hot carrier injection, trion manipulation, and on-chip excitonic devices based on two-dimensional semiconductors.
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2019 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2019 Tipo del documento: Article